JP4150449B2 - 化合物半導体素子 - Google Patents

化合物半導体素子 Download PDF

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Publication number
JP4150449B2
JP4150449B2 JP27160598A JP27160598A JP4150449B2 JP 4150449 B2 JP4150449 B2 JP 4150449B2 JP 27160598 A JP27160598 A JP 27160598A JP 27160598 A JP27160598 A JP 27160598A JP 4150449 B2 JP4150449 B2 JP 4150449B2
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Japan
Prior art keywords
contact layer
gan
layer
thin film
contact
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Expired - Fee Related
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JP27160598A
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English (en)
Japanese (ja)
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JP2000101142A5 (enExample
JP2000101142A (ja
Inventor
克信 笹沼
真司 斎藤
レニー ジョン
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Toshiba Corp
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Toshiba Corp
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Priority to JP27160598A priority Critical patent/JP4150449B2/ja
Publication of JP2000101142A publication Critical patent/JP2000101142A/ja
Publication of JP2000101142A5 publication Critical patent/JP2000101142A5/ja
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Publication of JP4150449B2 publication Critical patent/JP4150449B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP27160598A 1998-09-25 1998-09-25 化合物半導体素子 Expired - Fee Related JP4150449B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27160598A JP4150449B2 (ja) 1998-09-25 1998-09-25 化合物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27160598A JP4150449B2 (ja) 1998-09-25 1998-09-25 化合物半導体素子

Publications (3)

Publication Number Publication Date
JP2000101142A JP2000101142A (ja) 2000-04-07
JP2000101142A5 JP2000101142A5 (enExample) 2005-10-13
JP4150449B2 true JP4150449B2 (ja) 2008-09-17

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JP27160598A Expired - Fee Related JP4150449B2 (ja) 1998-09-25 1998-09-25 化合物半導体素子

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JP (1) JP4150449B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP2001223440A (ja) * 2000-02-08 2001-08-17 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2002314204A (ja) * 2001-04-16 2002-10-25 Ricoh Co Ltd ｐ型超格子構造とその作製方法、ＩＩＩ族窒化物半導体素子及びＩＩＩ族窒化物半導体発光素子
JP2002314199A (ja) * 2001-04-17 2002-10-25 Sony Corp 半導体レーザ素子及びその作製方法
CN100377369C (zh) * 2001-07-04 2008-03-26 日亚化学工业株式会社 氮化物半导体元件
US7485902B2 (en) * 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
CN1333470C (zh) * 2004-02-27 2007-08-22 广镓光电股份有限公司 发光二极管结构
TWI237402B (en) 2004-03-24 2005-08-01 Epistar Corp High luminant device
US7385226B2 (en) 2004-03-24 2008-06-10 Epistar Corporation Light-emitting device
US9508902B2 (en) 2005-02-21 2016-11-29 Epistar Corporation Optoelectronic semiconductor device
US8097897B2 (en) 2005-06-21 2012-01-17 Epistar Corporation High-efficiency light-emitting device and manufacturing method thereof
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
CN101604665A (zh) * 2007-07-20 2009-12-16 镓力姆企业私人有限公司 用于氮化物基膜以及其制造的掩埋接触器件

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JP2000101142A (ja) 2000-04-07

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