JPH1174257A5 - - Google Patents

Info

Publication number
JPH1174257A5
JPH1174257A5 JP1998185052A JP18505298A JPH1174257A5 JP H1174257 A5 JPH1174257 A5 JP H1174257A5 JP 1998185052 A JP1998185052 A JP 1998185052A JP 18505298 A JP18505298 A JP 18505298A JP H1174257 A5 JPH1174257 A5 JP H1174257A5
Authority
JP
Japan
Prior art keywords
fluorine
thin film
silicon oxide
doped silicon
oxide thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998185052A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174257A (ja
Filing date
Publication date
Priority claimed from US08/886,148 external-priority patent/US5869149A/en
Application filed filed Critical
Publication of JPH1174257A publication Critical patent/JPH1174257A/ja
Publication of JPH1174257A5 publication Critical patent/JPH1174257A5/ja
Pending legal-status Critical Current

Links

JP10185052A 1997-06-30 1998-06-30 フッ素含有酸化ケイ素薄膜及びその製造方法 Pending JPH1174257A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/886148 1997-06-30
US08/886,148 US5869149A (en) 1997-06-30 1997-06-30 Method for preparing nitrogen surface treated fluorine doped silicon dioxide films

Publications (2)

Publication Number Publication Date
JPH1174257A JPH1174257A (ja) 1999-03-16
JPH1174257A5 true JPH1174257A5 (enExample) 2005-10-06

Family

ID=25388479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10185052A Pending JPH1174257A (ja) 1997-06-30 1998-06-30 フッ素含有酸化ケイ素薄膜及びその製造方法

Country Status (3)

Country Link
US (1) US5869149A (enExample)
JP (1) JPH1174257A (enExample)
GB (1) GB2326886B (enExample)

Families Citing this family (40)

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US6451686B1 (en) * 1997-09-04 2002-09-17 Applied Materials, Inc. Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
US6261973B1 (en) * 1997-12-31 2001-07-17 Texas Instruments Incorporated Remote plasma nitridation to allow selectively etching of oxide
US6239491B1 (en) * 1998-05-18 2001-05-29 Lsi Logic Corporation Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same
US6444593B1 (en) * 1998-12-02 2002-09-03 Advanced Micro Devices, Inc. Surface treatment of low-K SiOF to prevent metal interaction
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US6413871B2 (en) * 1999-06-22 2002-07-02 Applied Materials, Inc. Nitrogen treatment of polished halogen-doped silicon glass
US6153512A (en) * 1999-10-12 2000-11-28 Taiwan Semiconductor Manufacturing Company Process to improve adhesion of HSQ to underlying materials
WO2001041203A1 (en) * 1999-11-30 2001-06-07 Intel Corporation Improved flourine doped sio2 film
JP2001274148A (ja) * 2000-03-24 2001-10-05 Tokyo Electron Ltd プラズマ処理装置及び方法
US6268294B1 (en) * 2000-04-04 2001-07-31 Taiwan Semiconductor Manufacturing Company Method of protecting a low-K dielectric material
US6294832B1 (en) * 2000-04-10 2001-09-25 National Science Council Semiconductor device having structure of copper interconnect/barrier dielectric liner/low-k dielectric trench and its fabrication method
US6468927B1 (en) * 2000-05-19 2002-10-22 Applied Materials, Inc. Method of depositing a nitrogen-doped FSG layer
WO2002013234A2 (en) * 2000-08-04 2002-02-14 Applied Materials, Inc. Stabilized surface between a fluorosilicate glass dielectric and a liner/barrier layer
US6511922B2 (en) * 2001-03-26 2003-01-28 Applied Materials, Inc. Methods and apparatus for producing stable low k FSG film for HDP-CVD
US6596653B2 (en) * 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
US6740601B2 (en) * 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
TWI240763B (en) * 2001-05-16 2005-10-01 Ind Tech Res Inst Liquid phase deposition production method and device
US7816188B2 (en) * 2001-07-30 2010-10-19 Sandisk 3D Llc Process for fabricating a dielectric film using plasma oxidation
US6605549B2 (en) 2001-09-29 2003-08-12 Intel Corporation Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
JP3925366B2 (ja) * 2001-10-17 2007-06-06 株式会社村田製作所 弾性表面波装置およびその製造方法
US20030224619A1 (en) * 2002-06-04 2003-12-04 Yoshi Ono Method for low temperature oxidation of silicon
US6902960B2 (en) * 2002-11-14 2005-06-07 Sharp Laboratories Of America, Inc. Oxide interface and a method for fabricating oxide thin films
US6808748B2 (en) * 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US6958112B2 (en) * 2003-05-27 2005-10-25 Applied Materials, Inc. Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation
US7608300B2 (en) * 2003-08-27 2009-10-27 Applied Materials, Inc. Methods and devices to reduce defects in dielectric stack structures
US6903031B2 (en) * 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US20050260356A1 (en) * 2004-05-18 2005-11-24 Applied Materials, Inc. Microcontamination abatement in semiconductor processing
US7229931B2 (en) * 2004-06-16 2007-06-12 Applied Materials, Inc. Oxygen plasma treatment for enhanced HDP-CVD gapfill
US7183227B1 (en) * 2004-07-01 2007-02-27 Applied Materials, Inc. Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
US7087536B2 (en) * 2004-09-01 2006-08-08 Applied Materials Silicon oxide gapfill deposition using liquid precursors
JP5135753B2 (ja) 2006-02-01 2013-02-06 セイコーエプソン株式会社 光学物品
US8043470B2 (en) * 2007-11-21 2011-10-25 Lam Research Corporation Electrode/probe assemblies and plasma processing chambers incorporating the same
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
KR100953016B1 (ko) * 2008-01-22 2010-04-14 주식회사 하이닉스반도체 반도체 소자의 제조 방법
DE102012201953A1 (de) * 2012-02-09 2013-08-14 Singulus Technologies Ag Verfahren und Vorrichtung zur Passivierung von Solarzellen mit einer Aluminiumoxid-Schicht
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
WO2020000377A1 (zh) * 2018-06-29 2020-01-02 长江存储科技有限责任公司 半导体结构及其形成方法

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JP3688726B2 (ja) * 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
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US6042901A (en) * 1996-02-20 2000-03-28 Lam Research Corporation Method for depositing fluorine doped silicon dioxide films

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