JP2001244462A5 - - Google Patents

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Publication number
JP2001244462A5
JP2001244462A5 JP2000055387A JP2000055387A JP2001244462A5 JP 2001244462 A5 JP2001244462 A5 JP 2001244462A5 JP 2000055387 A JP2000055387 A JP 2000055387A JP 2000055387 A JP2000055387 A JP 2000055387A JP 2001244462 A5 JP2001244462 A5 JP 2001244462A5
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Japan
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film
sio
adjacent
cvd method
type diffusion
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JP2000055387A
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English (en)
Japanese (ja)
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JP4363736B2 (ja
JP2001244462A (ja
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Priority to JP2000055387A priority Critical patent/JP4363736B2/ja
Priority claimed from JP2000055387A external-priority patent/JP4363736B2/ja
Priority to EP01104921A priority patent/EP1130653A3/en
Priority to US09/793,964 priority patent/US6573559B2/en
Publication of JP2001244462A publication Critical patent/JP2001244462A/ja
Priority to US10/401,672 priority patent/US6706615B2/en
Publication of JP2001244462A5 publication Critical patent/JP2001244462A5/ja
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Publication of JP4363736B2 publication Critical patent/JP4363736B2/ja
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JP2000055387A 2000-03-01 2000-03-01 トランジスタ及びその製造方法 Expired - Fee Related JP4363736B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000055387A JP4363736B2 (ja) 2000-03-01 2000-03-01 トランジスタ及びその製造方法
EP01104921A EP1130653A3 (en) 2000-03-01 2001-02-28 Field-effect transistor and method of making the same
US09/793,964 US6573559B2 (en) 2000-03-01 2001-02-28 Transistor and method of manufacturing the same
US10/401,672 US6706615B2 (en) 2000-03-01 2003-03-31 Method of manufacturing a transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000055387A JP4363736B2 (ja) 2000-03-01 2000-03-01 トランジスタ及びその製造方法

Publications (3)

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JP2001244462A JP2001244462A (ja) 2001-09-07
JP2001244462A5 true JP2001244462A5 (enExample) 2005-12-15
JP4363736B2 JP4363736B2 (ja) 2009-11-11

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JP2000055387A Expired - Fee Related JP4363736B2 (ja) 2000-03-01 2000-03-01 トランジスタ及びその製造方法

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US (2) US6573559B2 (enExample)
EP (1) EP1130653A3 (enExample)
JP (1) JP4363736B2 (enExample)

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US7772632B2 (en) 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
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US8021563B2 (en) * 2007-03-23 2011-09-20 Alpha & Omega Semiconductor, Ltd Etch depth determination for SGT technology
US7521332B2 (en) * 2007-03-23 2009-04-21 Alpha & Omega Semiconductor, Ltd Resistance-based etch depth determination for SGT technology
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JP2014056913A (ja) 2012-09-12 2014-03-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5811973B2 (ja) 2012-09-12 2015-11-11 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5729497B1 (ja) 2014-02-04 2015-06-03 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
WO2016046901A1 (ja) * 2014-09-24 2016-03-31 新電元工業株式会社 炭化ケイ素半導体装置、炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置の設計方法
WO2016086381A1 (zh) * 2014-12-04 2016-06-09 冯淑华 沟槽栅功率半导体场效应晶体管
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JP2017055102A (ja) * 2015-09-10 2017-03-16 株式会社豊田自動織機 トレンチゲート型半導体装置及びその製造方法
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CN107768253A (zh) * 2017-11-06 2018-03-06 上海华虹宏力半导体制造有限公司 屏蔽栅沟槽型mosfet的制造方法
JP7466482B2 (ja) * 2021-03-16 2024-04-12 三菱電機株式会社 半導体装置
CN113903801B (zh) * 2021-09-27 2023-08-18 上海华虹宏力半导体制造有限公司 Igbt器件及其制作方法

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