TWI304917B - Positive photoresist composition for discharge nozzle type application and resist pattern formation method - Google Patents

Positive photoresist composition for discharge nozzle type application and resist pattern formation method Download PDF

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Publication number
TWI304917B
TWI304917B TW093111012A TW93111012A TWI304917B TW I304917 B TWI304917 B TW I304917B TW 093111012 A TW093111012 A TW 093111012A TW 93111012 A TW93111012 A TW 93111012A TW I304917 B TWI304917 B TW I304917B
Authority
TW
Taiwan
Prior art keywords
resist pattern
discharge nozzle
photoresist composition
formation method
pattern formation
Prior art date
Application number
TW093111012A
Other languages
Chinese (zh)
Other versions
TW200502683A (en
Inventor
Kimitaka Morio
Tomosaburo Aoki
Tetsuya Kato
Tetsuya Nakajima
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34362594&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI304917(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200502683A publication Critical patent/TW200502683A/en
Application granted granted Critical
Publication of TWI304917B publication Critical patent/TWI304917B/en

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Classifications

    • G—PHYSICS
    • G08—SIGNALLING
    • G08G—TRAFFIC CONTROL SYSTEMS
    • G08G1/00—Traffic control systems for road vehicles
    • G08G1/01—Detecting movement of traffic to be counted or controlled
    • G08G1/052—Detecting movement of traffic to be counted or controlled with provision for determining speed or overspeed
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F19/00—Advertising or display means not otherwise provided for
    • G09F19/22—Advertising or display means on roads, walls or similar surfaces, e.g. illuminated

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Business, Economics & Management (AREA)
  • Accounting & Taxation (AREA)
  • Marketing (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

I3:0491第7隨测2號 民國103年1月3曰更正 使具有狹縫狀排出口之排出噴嘴與基板相對移動，將正型 光阻組成物塗佈於基板之塗佈面全面的方法，將申請專利 範圍第1項至第12項中任一項記載之正型光阻組成物塗 佈於基板上，在將正型光阻組成物塗佈於該基板上.後，使 該基板旋轉的步驟。 14·(刪除）I3:0491, 7th, 1st, 3rd, 3rd, 3rd, Republic of China, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd, 3rd The positive-type photoresist composition according to any one of the first to twelfth aspects of the patent application is applied to a substrate, and the positive-type photoresist composition is applied onto the substrate. The step of rotation. 14·(delete)

TW093111012A 2003-05-20 2004-04-20 Positive photoresist composition for discharge nozzle type application and resist pattern formation method TWI304917B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003141807 2003-05-20

Publications (2)

Publication Number Publication Date
TW200502683A TW200502683A (en) 2005-01-16
TWI304917B true TWI304917B (en) 2009-01-01

Family

ID=34362594

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111012A TWI304917B (en) 2003-05-20 2004-04-20 Positive photoresist composition for discharge nozzle type application and resist pattern formation method

Country Status (3)

Country Link
KR (1) KR100636568B1 (en)
CN (1) CN1282035C (en)
TW (1) TWI304917B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101209049B1 (en) * 2004-12-24 2012-12-07 스미또모 가가꾸 가부시끼가이샤 Photosensitive resin and thin film panel comprising pattern made of the photosensitive resin and method for manufacturing the thin film panel
JP4759483B2 (en) * 2006-09-25 2011-08-31 Ａｚエレクトロニックマテリアルズ株式会社 Photoresist composition, method of applying photoresist composition, and method of forming resist pattern
JP4591625B1 (en) * 2010-04-01 2010-12-01 Ｊｓｒ株式会社 Positive radiation-sensitive composition, interlayer insulating film and method for forming the same
JP5792548B2 (en) * 2011-07-28 2015-10-14 東京応化工業株式会社 Glass processing method
TWI443465B (en) * 2012-04-23 2014-07-01 Chi Mei Corp Photo-curing polysiloxane composition, protecting film and element containing said protecting film

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100394445B1 (en) * 1995-01-20 2004-05-24 인터내셔널 비지네스 머신즈 코포레이션 Method for developing positive photoresist and composition therefor
TW594406B (en) * 1998-02-25 2004-06-21 Ibm Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups
JP3802732B2 (en) * 2000-05-12 2006-07-26 信越化学工業株式会社 Resist material and pattern forming method
KR100816342B1 (en) * 2001-10-19 2008-03-24 삼성전자주식회사 Photoresist composition having a high heat resistance

Also Published As

Publication number Publication date
TW200502683A (en) 2005-01-16
CN1550899A (en) 2004-12-01
KR20040100926A (en) 2004-12-02
KR100636568B1 (en) 2006-10-19
CN1282035C (en) 2006-10-25

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