ITTO20050630A1 - Dispositivo di potenza a semiconduttore a porta isolata formata in uno scavo e relativo procedimento di fabbricazione - Google Patents
Dispositivo di potenza a semiconduttore a porta isolata formata in uno scavo e relativo procedimento di fabbricazioneInfo
- Publication number
- ITTO20050630A1 ITTO20050630A1 IT000630A ITTO20050630A ITTO20050630A1 IT TO20050630 A1 ITTO20050630 A1 IT TO20050630A1 IT 000630 A IT000630 A IT 000630A IT TO20050630 A ITTO20050630 A IT TO20050630A IT TO20050630 A1 ITTO20050630 A1 IT TO20050630A1
- Authority
- IT
- Italy
- Prior art keywords
- excavation
- power device
- device formed
- manufacturing procedure
- semiconductor power
- Prior art date
Links
- 238000009412 basement excavation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000630A ITTO20050630A1 (it) | 2005-09-15 | 2005-09-15 | Dispositivo di potenza a semiconduttore a porta isolata formata in uno scavo e relativo procedimento di fabbricazione |
US11/531,796 US20070063272A1 (en) | 2005-09-15 | 2006-09-14 | Semiconductor power device with insulated gate formed in a trench, and manufacturing process thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000630A ITTO20050630A1 (it) | 2005-09-15 | 2005-09-15 | Dispositivo di potenza a semiconduttore a porta isolata formata in uno scavo e relativo procedimento di fabbricazione |
Publications (1)
Publication Number | Publication Date |
---|---|
ITTO20050630A1 true ITTO20050630A1 (it) | 2007-03-16 |
Family
ID=37883216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT000630A ITTO20050630A1 (it) | 2005-09-15 | 2005-09-15 | Dispositivo di potenza a semiconduttore a porta isolata formata in uno scavo e relativo procedimento di fabbricazione |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070063272A1 (it) |
IT (1) | ITTO20050630A1 (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI222685B (en) * | 2003-12-18 | 2004-10-21 | Episil Technologies Inc | Metal oxide semiconductor device and fabricating method thereof |
US20100123193A1 (en) * | 2008-11-14 | 2010-05-20 | Burke Peter A | Semiconductor component and method of manufacture |
US7897462B2 (en) * | 2008-11-14 | 2011-03-01 | Semiconductor Components Industries, L.L.C. | Method of manufacturing semiconductor component with gate and shield electrodes in trenches |
US8664713B2 (en) | 2008-12-31 | 2014-03-04 | Stmicroelectronics S.R.L. | Integrated power device on a semiconductor substrate having an improved trench gate structure |
IT1396561B1 (it) | 2009-03-13 | 2012-12-14 | St Microelectronics Srl | Metodo per realizzare un dispositivo di potenza con struttura trench-gate e relativo dispositivo |
KR101107658B1 (ko) | 2009-06-09 | 2012-01-20 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
KR101142335B1 (ko) | 2009-06-15 | 2012-05-17 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조방법 |
US8592266B2 (en) * | 2010-10-27 | 2013-11-26 | International Business Machines Corporation | Replacement gate MOSFET with a high performance gate electrode |
US9006063B2 (en) * | 2013-06-28 | 2015-04-14 | Stmicroelectronics S.R.L. | Trench MOSFET |
CN106876276A (zh) * | 2017-01-04 | 2017-06-20 | 上海华虹宏力半导体制造有限公司 | 沟槽型双层栅mos结构的制造方法 |
CN111863617A (zh) * | 2019-04-24 | 2020-10-30 | 帅群微电子股份有限公司 | 沟槽式功率半导体组件及其制造方法 |
CN113437141A (zh) * | 2021-06-24 | 2021-09-24 | 电子科技大学 | 一种具有多晶硅二极管栅极结构的浮空p区cstbt器件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6147377A (en) * | 1998-03-30 | 2000-11-14 | Advanced Micro Devices, Inc. | Fully recessed semiconductor device |
US6156606A (en) * | 1998-11-17 | 2000-12-05 | Siemens Aktiengesellschaft | Method of forming a trench capacitor using a rutile dielectric material |
DE19935442C1 (de) * | 1999-07-28 | 2000-12-21 | Siemens Ag | Verfahren zum Herstellen eines Trench-MOS-Leistungstransistors |
JP4363736B2 (ja) * | 2000-03-01 | 2009-11-11 | 新電元工業株式会社 | トランジスタ及びその製造方法 |
GB0028031D0 (en) * | 2000-11-17 | 2001-01-03 | Koninkl Philips Electronics Nv | Trench-gate field-effect transistors and their manufacture |
US7091573B2 (en) * | 2002-03-19 | 2006-08-15 | Infineon Technologies Ag | Power transistor |
TWI248136B (en) * | 2002-03-19 | 2006-01-21 | Infineon Technologies Ag | Method for fabricating a transistor arrangement having trench transistor cells having a field electrode |
JP2007531988A (ja) * | 2004-03-01 | 2007-11-08 | インターナショナル レクティファイアー コーポレイション | トレンチデバイスのための自動整合された接点構造体 |
-
2005
- 2005-09-15 IT IT000630A patent/ITTO20050630A1/it unknown
-
2006
- 2006-09-14 US US11/531,796 patent/US20070063272A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070063272A1 (en) | 2007-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ITTO20050630A1 (it) | Dispositivo di potenza a semiconduttore a porta isolata formata in uno scavo e relativo procedimento di fabbricazione | |
ITMI20050253A1 (it) | Struttura di porta dispositivo semiconduttore avente la medesima e procedimenti di formazione della struttura di porta e del dispositivo semiconduttore | |
GB2500361B (en) | Organic electronic device structures and fabrication methods | |
EP1749316A4 (en) | PERYLENE N TYPE SEMICONDUCTORS AND ASSOCIATED DEVICES | |
ITMI20050917A1 (it) | Dispositivo integrato a semiconduttore composito di potenza e metodo di fabbricazione dello stesso | |
ITMI20062176A1 (it) | Dispositivo semiconduttore avente una regione di separazione | |
IL181187A0 (en) | Semiconductor radiation detector with a modified internal gate structure | |
ITTO20050015A1 (it) | Dispositivo di connessione per correnti elevate e relativo elemento di contatto | |
DE602006012106D1 (de) | Halbleiteranordnung | |
ITMI20050119A1 (it) | Struttura di pannello e relativo procedimento di realizzazione | |
ITTO20050203A1 (it) | Filatorio e suo procedimento di funzionamento | |
DE112007000707A5 (de) | Tor, insbesondere Sektionaltor, und Torantriebsvorrichtung | |
ITMI20051632A1 (it) | Dispositivo di strozzamento | |
FR2881575B1 (fr) | Transistor mos a grille totalement siliciuree | |
TWI349956B (en) | Semiconductor device with gate stack structure | |
DE602006006517D1 (de) | Halbleiterspeichervorrichtung und elektronisches Gerät | |
DE602005009987D1 (de) | Halbleitervorrichtung und Herstellungsverfahren dazu | |
DE602006003509D1 (de) | Halbleiterspeicheranordnung | |
ITTO20030013A1 (it) | Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. | |
EP1917683A4 (en) | CIRCUIT SIGNALING DEVICE WITH CONNECTED GATE BITS | |
DE502006003015D1 (de) | Zweistufig öffnender kraftstoffinjektor | |
ITVA20050038A1 (it) | Transistore bipolare di potenza e relativo dispositivo integrato con clamp della tensione di collettore | |
ITMI20050608A1 (it) | Dispositivo elettronico di memoria non volatile a struttura cnand integrato monoliticamente su semiconduttore | |
ITMI20042244A1 (it) | Dispositivo elettronico mos di potenza e relativo metodo di realizzazione | |
ITMI20042245A1 (it) | Dispositivo elettronico mos di potenza a commutazione controllata |