ITTO20030013A1 - Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. - Google Patents
Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione.Info
- Publication number
- ITTO20030013A1 ITTO20030013A1 IT000013A ITTO20030013A ITTO20030013A1 IT TO20030013 A1 ITTO20030013 A1 IT TO20030013A1 IT 000013 A IT000013 A IT 000013A IT TO20030013 A ITTO20030013 A IT TO20030013A IT TO20030013 A1 ITTO20030013 A1 IT TO20030013A1
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing procedure
- reduced dimension
- related manufacturing
- dmos device
- dmos
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000013A ITTO20030013A1 (it) | 2003-01-14 | 2003-01-14 | Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. |
US10/758,699 US7205597B2 (en) | 2003-01-14 | 2004-01-14 | DMOS device of small dimensions and manufacturing process thereof |
US11/716,078 US7521758B2 (en) | 2003-01-14 | 2007-03-08 | DMOS device of small dimensions and manufacturing process thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000013A ITTO20030013A1 (it) | 2003-01-14 | 2003-01-14 | Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. |
Publications (1)
Publication Number | Publication Date |
---|---|
ITTO20030013A1 true ITTO20030013A1 (it) | 2004-07-15 |
Family
ID=33495875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT000013A ITTO20030013A1 (it) | 2003-01-14 | 2003-01-14 | Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. |
Country Status (2)
Country | Link |
---|---|
US (2) | US7205597B2 (it) |
IT (1) | ITTO20030013A1 (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ITTO20030013A1 (it) * | 2003-01-14 | 2004-07-15 | St Microelectronics Srl | Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. |
JP2008535235A (ja) * | 2005-03-31 | 2008-08-28 | エヌエックスピー ビー ヴィ | 相補形非対称高電圧デバイス及びその製造方法 |
JP2010278312A (ja) * | 2009-05-29 | 2010-12-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP5700649B2 (ja) * | 2011-01-24 | 2015-04-15 | 旭化成エレクトロニクス株式会社 | 半導体装置の製造方法 |
ITMI20121244A1 (it) * | 2012-07-17 | 2014-01-18 | St Microelectronics Srl | Transistore con contatti di terminale auto-allineati |
DE102015003082B4 (de) * | 2015-03-11 | 2020-12-10 | Elmos Semiconductor Se | MOS Transistor mit einem verbesserten Einschaltwiderstand |
US10840337B2 (en) | 2018-11-16 | 2020-11-17 | Atomera Incorporated | Method for making a FINFET having reduced contact resistance |
US10818755B2 (en) | 2018-11-16 | 2020-10-27 | Atomera Incorporated | Method for making semiconductor device including source/drain dopant diffusion blocking superlattices to reduce contact resistance |
US10840336B2 (en) | 2018-11-16 | 2020-11-17 | Atomera Incorporated | Semiconductor device with metal-semiconductor contacts including oxygen insertion layer to constrain dopants and related methods |
US10854717B2 (en) | 2018-11-16 | 2020-12-01 | Atomera Incorporated | Method for making a FINFET including source and drain dopant diffusion blocking superlattices to reduce contact resistance |
US10840335B2 (en) | 2018-11-16 | 2020-11-17 | Atomera Incorporated | Method for making semiconductor device including body contact dopant diffusion blocking superlattice to reduce contact resistance |
US10847618B2 (en) * | 2018-11-16 | 2020-11-24 | Atomera Incorporated | Semiconductor device including body contact dopant diffusion blocking superlattice having reduced contact resistance |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5171705A (en) * | 1991-11-22 | 1992-12-15 | Supertex, Inc. | Self-aligned structure and process for DMOS transistor |
JP3317347B2 (ja) * | 1999-09-02 | 2002-08-26 | 日本電気株式会社 | ダイオードを備えた半導体装置およびその製造方法 |
ITTO20030013A1 (it) * | 2003-01-14 | 2004-07-15 | St Microelectronics Srl | Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. |
-
2003
- 2003-01-14 IT IT000013A patent/ITTO20030013A1/it unknown
-
2004
- 2004-01-14 US US10/758,699 patent/US7205597B2/en not_active Expired - Lifetime
-
2007
- 2007-03-08 US US11/716,078 patent/US7521758B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7205597B2 (en) | 2007-04-17 |
US20040251494A1 (en) | 2004-12-16 |
US20070249124A1 (en) | 2007-10-25 |
US7521758B2 (en) | 2009-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60326860D1 (de) | Absperrschieber | |
ATE418695T1 (de) | Quetschventil | |
DE602004005760D1 (de) | Halbleitervorrichtung | |
DE602004024728D1 (de) | Schiebeelement | |
DE60332500D1 (de) | Halbleitervorrichtung | |
DE602004014660D1 (de) | Halteelement | |
DE602004002123D1 (de) | Halteelement | |
DE50313414D1 (de) | Klemmvorrichtung | |
ITTO20030836A1 (it) | Dispositivo di allineamento. | |
DE602004028430D1 (de) | Halbleiter | |
DE60327664D1 (de) | Persönliche identifikationseinrichtung | |
DE602004022178D1 (de) | Klemmvorrichtung | |
ITMI20031145A1 (it) | Dispositivo e procedimento di cottura. | |
DE602004000778D1 (de) | Kontaktelement | |
ATE538876T1 (de) | Ventileinrichtung | |
ITTO20030013A1 (it) | Dispositivo dmos di dimensioni ridotte e relativo procedimento di fabbricazione. | |
DE60335147D1 (de) | Integriertes halbleiterbauelement | |
DE102004032906B8 (de) | Kollision-Feststellvorrichtung | |
ATE313441T1 (de) | Auftraggerät | |
ATE476892T1 (de) | Ventilanordnung | |
DE602004008164D1 (de) | Ventilvorrichtung | |
SE0303427L (sv) | Låsanordning | |
DE502004004631D1 (de) | Kabelbearbeitungseinrichtung | |
DE502004005315D1 (de) | Kabelbearbeitungseinrichtung | |
SE0302333L (sv) | Ventilanordning |