EP1917683A4 - Power semiconductor device with interconnected gate trenches - Google Patents

Power semiconductor device with interconnected gate trenches

Info

Publication number
EP1917683A4
EP1917683A4 EP06801678A EP06801678A EP1917683A4 EP 1917683 A4 EP1917683 A4 EP 1917683A4 EP 06801678 A EP06801678 A EP 06801678A EP 06801678 A EP06801678 A EP 06801678A EP 1917683 A4 EP1917683 A4 EP 1917683A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
power semiconductor
gate trenches
interconnected gate
interconnected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06801678A
Other languages
German (de)
French (fr)
Other versions
EP1917683A2 (en
Inventor
Ling Ma
Adam I Amali
Russell Turner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies North America Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/504,740 external-priority patent/US7524726B2/en
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of EP1917683A2 publication Critical patent/EP1917683A2/en
Publication of EP1917683A4 publication Critical patent/EP1917683A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)
EP06801678A 2005-08-17 2006-08-16 Power semiconductor device with interconnected gate trenches Withdrawn EP1917683A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US70902005P 2005-08-17 2005-08-17
US11/504,740 US7524726B2 (en) 2005-08-17 2006-08-15 Method for fabricating a semiconductor device
PCT/US2006/032060 WO2007022316A2 (en) 2005-08-17 2006-08-16 Power semiconductor device with interconnected gate trenches

Publications (2)

Publication Number Publication Date
EP1917683A2 EP1917683A2 (en) 2008-05-07
EP1917683A4 true EP1917683A4 (en) 2008-11-05

Family

ID=37758372

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06801678A Withdrawn EP1917683A4 (en) 2005-08-17 2006-08-16 Power semiconductor device with interconnected gate trenches

Country Status (4)

Country Link
EP (1) EP1917683A4 (en)
JP (1) JP2009505433A (en)
TW (1) TWI317971B (en)
WO (1) WO2007022316A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5401826B2 (en) * 2007-09-06 2014-01-29 トヨタ自動車株式会社 Semiconductor device
JP5633992B2 (en) * 2010-06-11 2014-12-03 トヨタ自動車株式会社 Semiconductor device and manufacturing method of semiconductor device
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
JP6173987B2 (en) * 2013-09-20 2017-08-02 サンケン電気株式会社 Semiconductor device
WO2023166666A1 (en) * 2022-03-03 2023-09-07 三菱電機株式会社 Semiconductor device and method for manufacturing semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01192174A (en) * 1988-01-27 1989-08-02 Hitachi Ltd Semiconductor device
JPH10214968A (en) * 1997-01-31 1998-08-11 Hitachi Ltd Semiconductor device
WO2000042665A1 (en) * 1999-01-11 2000-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Power mos element and method for producing the same
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
EP1351313A2 (en) * 2002-03-22 2003-10-08 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US20040173844A1 (en) * 2003-03-05 2004-09-09 Advanced Analogic Technologies, Inc. Advanced Analogic Technologies (Hongkong) Limited Trench power MOSFET with planarized gate bus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430315A (en) * 1993-07-22 1995-07-04 Rumennik; Vladimir Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
JPH1197689A (en) * 1997-09-17 1999-04-09 Nec Corp Semiconductor device
US6838735B1 (en) * 2000-02-24 2005-01-04 International Rectifier Corporation Trench FET with non overlapping poly and remote contact therefor
US6580123B2 (en) * 2000-04-04 2003-06-17 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
JP4270773B2 (en) * 2001-06-08 2009-06-03 三洋電機株式会社 1 chip dual type insulated gate type semiconductor device
GB0122121D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in a trench-gate mosfet
GB2381122B (en) * 2001-10-16 2006-04-05 Zetex Plc Termination structure for a semiconductor device
JP4178789B2 (en) * 2001-12-18 2008-11-12 富士電機デバイステクノロジー株式会社 Semiconductor device and manufacturing method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01192174A (en) * 1988-01-27 1989-08-02 Hitachi Ltd Semiconductor device
JPH10214968A (en) * 1997-01-31 1998-08-11 Hitachi Ltd Semiconductor device
WO2000042665A1 (en) * 1999-01-11 2000-07-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Power mos element and method for producing the same
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
EP1351313A2 (en) * 2002-03-22 2003-10-08 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US20040173844A1 (en) * 2003-03-05 2004-09-09 Advanced Analogic Technologies, Inc. Advanced Analogic Technologies (Hongkong) Limited Trench power MOSFET with planarized gate bus

Also Published As

Publication number Publication date
TW200713430A (en) 2007-04-01
EP1917683A2 (en) 2008-05-07
JP2009505433A (en) 2009-02-05
TWI317971B (en) 2009-12-01
WO2007022316A2 (en) 2007-02-22
WO2007022316A3 (en) 2007-07-12

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

A4 Supplementary search report drawn up and despatched

Effective date: 20081006

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/739 20060101ALN20080929BHEP

Ipc: H01L 29/78 20060101AFI20080929BHEP

Ipc: H01L 29/423 20060101ALI20080929BHEP

Ipc: H01L 29/40 20060101ALN20080929BHEP

Ipc: H01L 29/417 20060101ALN20080929BHEP

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20161220

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: INFINEON TECHNOLOGIES AMERICAS CORP.

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