JPH01192174A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01192174A JPH01192174A JP1648488A JP1648488A JPH01192174A JP H01192174 A JPH01192174 A JP H01192174A JP 1648488 A JP1648488 A JP 1648488A JP 1648488 A JP1648488 A JP 1648488A JP H01192174 A JPH01192174 A JP H01192174A
- Authority
- JP
- Grant status
- Application
- Patent type
- Prior art keywords
- trench
- gate
- film
- oxide
- formed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
Abstract
PURPOSE:Not only to improve a device in breakdown strength but also micronize a cell in size by a method wherein a trench is provided so as to reach to a drain region, a gate oxide film is formed on the inner wall of the trench, and the oxide film formed on the base of the trench is made thicker than one formed on the side wall or other parts of the trench. CONSTITUTION:A source region 6 is formed on a primary face of a semiconductor substrate 2 in a grating. A trench (deep groove) 11 is provided along a center of the source region 6. The base of the trench 11 reaches an epitaxial layer 3 or a superficial layer of the semiconductor substrate 2 penetrating a channel forming layer 20. A gate oxide film 7 is provided covering the inner wall of the trench 11. The gate oxide film 7 is 500Angstrom in thickness at the side wall of the trench and 2000Angstrom -3000Angstrom thick at the base of the trench 11. A device of this design is formed in such a structure that the gate oxide film 7 is provided onto the wall of the trench 11 and a gate electrode buried in the trench 11, so that the cell can be diminished in size. A gate oxide film formed on the base of a trench is made thick, wherefore an electric field between a gate and a drain is alleviated and the drain is improved in breakdown strength.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1648488A JP2647884B2 (en) | 1988-01-27 | 1988-01-27 | A method of manufacturing a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1648488A JP2647884B2 (en) | 1988-01-27 | 1988-01-27 | A method of manufacturing a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01192174A true true JPH01192174A (en) | 1989-08-02 |
JP2647884B2 JP2647884B2 (en) | 1997-08-27 |
Family
ID=11917560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1648488A Expired - Lifetime JP2647884B2 (en) | 1988-01-27 | 1988-01-27 | A method of manufacturing a semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2647884B2 (en) |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126807A (en) * | 1990-06-13 | 1992-06-30 | Kabushiki Kaisha Toshiba | Vertical MOS transistor and its production method |
WO1993003502A1 (en) * | 1991-07-26 | 1993-02-18 | Nippondenso Co., Ltd. | Method of producing vertical mosfet |
JPH07142709A (en) * | 1993-06-22 | 1995-06-02 | Nec Corp | Vertical mosfet |
EP0676814A2 (en) * | 1994-04-06 | 1995-10-11 | Nippondenso Co., Ltd. | Trench semiconductor device and process of producing same |
EP0801426A2 (en) * | 1996-04-10 | 1997-10-15 | Harris Corporation | Improved trench MOS gate device and method of producing the same |
JPH09321289A (en) * | 1996-05-30 | 1997-12-12 | Nec Yamagata Ltd | Vertical field-effect transistor |
JPH1012877A (en) * | 1996-06-27 | 1998-01-16 | Nec Corp | Vertical field effect transistor |
WO1998026458A1 (en) * | 1996-12-11 | 1998-06-18 | The Kansai Electric Power Co., Inc. | Insulated gate semiconductor device |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
US6084268A (en) * | 1996-03-05 | 2000-07-04 | Semiconductor Components Industries, Llc | Power MOSFET device having low on-resistance and method |
US6342709B1 (en) | 1997-12-10 | 2002-01-29 | The Kansai Electric Power Co., Inc. | Insulated gate semiconductor device |
WO2002015280A1 (en) * | 2000-08-16 | 2002-02-21 | Fairchild Semiconductor Corporation | Thick oxide layer on bottom of trench structure in silicon |
US6455378B1 (en) | 1999-10-26 | 2002-09-24 | Hitachi, Ltd. | Method of manufacturing a trench gate power transistor with a thick bottom insulator |
US6489652B1 (en) * | 1995-11-11 | 2002-12-03 | Fairchild Semiconductor Corporation | Trench DMOS device having a high breakdown resistance |
WO2003015180A2 (en) | 2001-08-10 | 2003-02-20 | Siliconix Incorporated | Mis device having a trench gate electrode and method of making the same |
JP2003509836A (en) * | 1999-05-25 | 2003-03-11 | ウィリアムス、リチャード・ケイ | Method of manufacturing a semiconductor device and to a trench with a gate oxide layer having a plurality of thick |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
JP2004500716A (en) * | 2000-03-17 | 2004-01-08 | ゼネラル セミコンダクター,インク. | Double diffused metal oxide semiconductor transistor and a manufacturing method thereof having a trench gate electrode |
US6849898B2 (en) | 2001-08-10 | 2005-02-01 | Siliconix Incorporated | Trench MIS device with active trench corners and thick bottom oxide |
US7009247B2 (en) | 2001-07-03 | 2006-03-07 | Siliconix Incorporated | Trench MIS device with thick oxide layer in bottom of gate contact trench |
US7033876B2 (en) | 2001-07-03 | 2006-04-25 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
JP2006332591A (en) * | 2005-04-28 | 2006-12-07 | Denso Corp | Semiconductor device |
JP2006351697A (en) * | 2005-06-14 | 2006-12-28 | Denso Corp | Insulated-gate bipolar transistor and its manufacturing method |
JP2007049204A (en) * | 2006-11-15 | 2007-02-22 | Mitsubishi Electric Corp | Manufacturing method of semiconductor device having trench structure |
US7229872B2 (en) | 2000-04-04 | 2007-06-12 | International Rectifier Corporation | Low voltage power MOSFET device and process for its manufacture |
US7291884B2 (en) | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
JP2008021930A (en) * | 2006-07-14 | 2008-01-31 | Denso Corp | Semiconductor device |
EP1917683A2 (en) * | 2005-08-17 | 2008-05-07 | International Rectifier Corporation | Power semiconductor device with interconnected gate trenches |
JP2008547225A (en) * | 2005-06-24 | 2008-12-25 | フェアチャイルド・セミコンダクター・コーポレーション | Structure and method for forming a dielectric layer extending laterally in the trench gate fet |
JP2009503873A (en) * | 2005-07-27 | 2009-01-29 | インターナショナル レクティファイアー コーポレイション | Split electrode gate trench power devices |
US7573096B2 (en) | 2005-02-16 | 2009-08-11 | Shindengen Electric Manufacturing Co, Ltd. | Semiconductor device for reducing forward voltage by using OHMIC contact |
JP2009224365A (en) * | 2008-03-13 | 2009-10-01 | Rohm Co Ltd | Semiconductor device and method for fabricating the same |
US7943990B2 (en) | 2005-08-17 | 2011-05-17 | International Rectifier Corporation | Power semiconductor device with interconnected gate trenches |
JP4794545B2 (en) * | 2005-01-31 | 2011-10-19 | 新電元工業株式会社 | Semiconductor device |
US8154073B2 (en) | 2006-07-14 | 2012-04-10 | Denso Corporation | Semiconductor device |
WO2012132229A1 (en) * | 2011-03-30 | 2012-10-04 | 株式会社日立製作所 | MANUFACTURING METHOD FOR TRENCH-TYPE SiC SEMICONDUCTOR DEVICE |
US8283721B2 (en) | 2008-03-26 | 2012-10-09 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing the same |
US8598654B2 (en) | 2011-03-16 | 2013-12-03 | Fairchild Semiconductor Corporation | MOSFET device with thick trench bottom oxide |
US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
US8889511B2 (en) | 2003-05-20 | 2014-11-18 | Fairchild Semiconductor Corporation | Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor |
US8928077B2 (en) | 2007-09-21 | 2015-01-06 | Fairchild Semiconductor Corporation | Superjunction structures for power devices |
US9224853B2 (en) | 2007-12-26 | 2015-12-29 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US9431481B2 (en) | 2008-09-19 | 2016-08-30 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6469345B2 (en) | 2000-01-14 | 2002-10-22 | Denso Corporation | Semiconductor device and method for manufacturing the same |
US6864532B2 (en) | 2000-01-14 | 2005-03-08 | Denso Corporation | Semiconductor device and method for manufacturing the same |
JP4200626B2 (en) | 2000-02-28 | 2008-12-24 | 株式会社デンソー | Method of manufacturing insulated gate power device |
JP4059510B2 (en) | 2004-10-22 | 2008-03-12 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
JP5222466B2 (en) | 2006-08-09 | 2013-06-26 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
JP2008159916A (en) | 2006-12-25 | 2008-07-10 | Sanyo Electric Co Ltd | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5858771A (en) * | 1981-09-14 | 1983-04-07 | Philips Nv | Insulated gate field effect transistor and method of producing same |
JPS62272570A (en) * | 1986-03-24 | 1987-11-26 | Siliconix Inc | Planar vertical channel dmos structure |
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5858771A (en) * | 1981-09-14 | 1983-04-07 | Philips Nv | Insulated gate field effect transistor and method of producing same |
JPS62272570A (en) * | 1986-03-24 | 1987-11-26 | Siliconix Inc | Planar vertical channel dmos structure |
Cited By (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126807A (en) * | 1990-06-13 | 1992-06-30 | Kabushiki Kaisha Toshiba | Vertical MOS transistor and its production method |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
WO1993003502A1 (en) * | 1991-07-26 | 1993-02-18 | Nippondenso Co., Ltd. | Method of producing vertical mosfet |
US5460985A (en) * | 1991-07-26 | 1995-10-24 | Ipics Corporation | Production method of a verticle type MOSFET |
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
JPH07142709A (en) * | 1993-06-22 | 1995-06-02 | Nec Corp | Vertical mosfet |
EP0676814A2 (en) * | 1994-04-06 | 1995-10-11 | Nippondenso Co., Ltd. | Trench semiconductor device and process of producing same |
EP0676814A3 (en) * | 1994-04-06 | 1997-10-01 | Nippon Denso Co | Trench semiconductor device and process of producing same. |
US6489652B1 (en) * | 1995-11-11 | 2002-12-03 | Fairchild Semiconductor Corporation | Trench DMOS device having a high breakdown resistance |
US6084268A (en) * | 1996-03-05 | 2000-07-04 | Semiconductor Components Industries, Llc | Power MOSFET device having low on-resistance and method |
EP0801426A3 (en) * | 1996-04-10 | 1998-09-30 | Harris Corporation | Improved trench MOS gate device and method of producing the same |
EP0801426A2 (en) * | 1996-04-10 | 1997-10-15 | Harris Corporation | Improved trench MOS gate device and method of producing the same |
JPH09321289A (en) * | 1996-05-30 | 1997-12-12 | Nec Yamagata Ltd | Vertical field-effect transistor |
JPH1012877A (en) * | 1996-06-27 | 1998-01-16 | Nec Corp | Vertical field effect transistor |
WO1998026458A1 (en) * | 1996-12-11 | 1998-06-18 | The Kansai Electric Power Co., Inc. | Insulated gate semiconductor device |
EP0893830A4 (en) * | 1996-12-11 | 1999-02-17 | ||
US6342709B1 (en) | 1997-12-10 | 2002-01-29 | The Kansai Electric Power Co., Inc. | Insulated gate semiconductor device |
JP4834228B2 (en) * | 1999-05-25 | 2011-12-14 | ウィリアムス、リチャード・ケイWILLIAMS Richard,K. | Method of manufacturing a trench semiconductor device having a gate oxide layer having a plurality of thick |
JP2003509836A (en) * | 1999-05-25 | 2003-03-11 | ウィリアムス、リチャード・ケイ | Method of manufacturing a semiconductor device and to a trench with a gate oxide layer having a plurality of thick |
US6455378B1 (en) | 1999-10-26 | 2002-09-24 | Hitachi, Ltd. | Method of manufacturing a trench gate power transistor with a thick bottom insulator |
JP2004500716A (en) * | 2000-03-17 | 2004-01-08 | ゼネラル セミコンダクター,インク. | Double diffused metal oxide semiconductor transistor and a manufacturing method thereof having a trench gate electrode |
US8487368B2 (en) | 2000-04-04 | 2013-07-16 | International Rectifier Corporation | Low voltage power MOSFET device and process for its manufacture |
US7229872B2 (en) | 2000-04-04 | 2007-06-12 | International Rectifier Corporation | Low voltage power MOSFET device and process for its manufacture |
WO2002015280A1 (en) * | 2000-08-16 | 2002-02-21 | Fairchild Semiconductor Corporation | Thick oxide layer on bottom of trench structure in silicon |
US6437386B1 (en) * | 2000-08-16 | 2002-08-20 | Fairchild Semiconductor Corporation | Method for creating thick oxide on the bottom surface of a trench structure in silicon |
JP2004507092A (en) * | 2000-08-16 | 2004-03-04 | フェアチャイルド セミコンダクター コーポレイション | Thick oxide layer having a trench structure bottom in Silicon |
US6861296B2 (en) | 2000-08-16 | 2005-03-01 | Fairchild Semiconductor Corporation | Method for creating thick oxide on the bottom surface of a trench structure in silicon |
US9368587B2 (en) | 2001-01-30 | 2016-06-14 | Fairchild Semiconductor Corporation | Accumulation-mode field effect transistor with improved current capability |
US7416947B2 (en) | 2001-07-03 | 2008-08-26 | Siliconix Incorporated | Method of fabricating trench MIS device with thick oxide layer in bottom of trench |
US7009247B2 (en) | 2001-07-03 | 2006-03-07 | Siliconix Incorporated | Trench MIS device with thick oxide layer in bottom of gate contact trench |
US7033876B2 (en) | 2001-07-03 | 2006-04-25 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
US7326995B2 (en) | 2001-07-03 | 2008-02-05 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
US7435650B2 (en) | 2001-07-03 | 2008-10-14 | Siliconix Incorporated | Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide |
US7291884B2 (en) | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
JP2009152630A (en) * | 2001-08-10 | 2009-07-09 | Siliconix Inc | Trench mis device having active trench corner and thick-bottom oxide, and method of manufacturing the same |
KR100771815B1 (en) * | 2001-08-10 | 2007-10-30 | 실리코닉스 인코퍼레이티드 | Trench mis device with active trench corners and thick bottom oxide and method of making the same |
US6849898B2 (en) | 2001-08-10 | 2005-02-01 | Siliconix Incorporated | Trench MIS device with active trench corners and thick bottom oxide |
US6875657B2 (en) | 2001-08-10 | 2005-04-05 | Siliconix Incorporated | Method of fabricating trench MIS device with graduated gate oxide layer |
WO2003015180A3 (en) * | 2001-08-10 | 2003-11-06 | Siliconix Inc | Mis device having a trench gate electrode and method of making the same |
WO2003015180A2 (en) | 2001-08-10 | 2003-02-20 | Siliconix Incorporated | Mis device having a trench gate electrode and method of making the same |
US6903412B2 (en) | 2001-08-10 | 2005-06-07 | Siliconix Incorporated | Trench MIS device with graduated gate oxide layer |
US8889511B2 (en) | 2003-05-20 | 2014-11-18 | Fairchild Semiconductor Corporation | Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor |
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JP4794545B2 (en) * | 2005-01-31 | 2011-10-19 | 新電元工業株式会社 | Semiconductor device |
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JP2006332591A (en) * | 2005-04-28 | 2006-12-07 | Denso Corp | Semiconductor device |
JP2006351697A (en) * | 2005-06-14 | 2006-12-28 | Denso Corp | Insulated-gate bipolar transistor and its manufacturing method |
JP2008547225A (en) * | 2005-06-24 | 2008-12-25 | フェアチャイルド・セミコンダクター・コーポレーション | Structure and method for forming a dielectric layer extending laterally in the trench gate fet |
JP2009503873A (en) * | 2005-07-27 | 2009-01-29 | インターナショナル レクティファイアー コーポレイション | Split electrode gate trench power devices |
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JP2007049204A (en) * | 2006-11-15 | 2007-02-22 | Mitsubishi Electric Corp | Manufacturing method of semiconductor device having trench structure |
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Also Published As
Publication number | Publication date | Type |
---|---|---|
JP2647884B2 (en) | 1997-08-27 | grant |
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