JPH01192174A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH01192174A
JPH01192174A JP1648488A JP1648488A JPH01192174A JP H01192174 A JPH01192174 A JP H01192174A JP 1648488 A JP1648488 A JP 1648488A JP 1648488 A JP1648488 A JP 1648488A JP H01192174 A JPH01192174 A JP H01192174A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
trench
oxide film
formed
gate oxide
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1648488A
Other versions
JP2647884B2 (en )
Inventor
Tetsuo Iijima
Akira Muramatsu
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode

Abstract

PURPOSE:Not only to improve a device in breakdown strength but also micronize a cell in size by a method wherein a trench is provided so as to reach to a drain region, a gate oxide film is formed on the inner wall of the trench, and the oxide film formed on the base of the trench is made thicker than one formed on the side wall or other parts of the trench. CONSTITUTION:A source region 6 is formed on a primary face of a semiconductor substrate 2 in a grating. A trench (deep groove) 11 is provided along a center of the source region 6. The base of the trench 11 reaches an epitaxial layer 3 or a superficial layer of the semiconductor substrate 2 penetrating a channel forming layer 20. A gate oxide film 7 is provided covering the inner wall of the trench 11. The gate oxide film 7 is 500Angstrom in thickness at the side wall of the trench and 2000Angstrom -3000Angstrom thick at the base of the trench 11. A device of this design is formed in such a structure that the gate oxide film 7 is provided onto the wall of the trench 11 and a gate electrode buried in the trench 11, so that the cell can be diminished in size. A gate oxide film formed on the base of a trench is made thick, wherefore an electric field between a gate and a drain is alleviated and the drain is improved in breakdown strength.
JP1648488A 1988-01-27 1988-01-27 A method of manufacturing a semiconductor device Expired - Lifetime JP2647884B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1648488A JP2647884B2 (en) 1988-01-27 1988-01-27 A method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1648488A JP2647884B2 (en) 1988-01-27 1988-01-27 A method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
JPH01192174A true true JPH01192174A (en) 1989-08-02
JP2647884B2 JP2647884B2 (en) 1997-08-27

Family

ID=11917560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1648488A Expired - Lifetime JP2647884B2 (en) 1988-01-27 1988-01-27 A method of manufacturing a semiconductor device

Country Status (1)

Country Link
JP (1) JP2647884B2 (en)

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126807A (en) * 1990-06-13 1992-06-30 Kabushiki Kaisha Toshiba Vertical MOS transistor and its production method
WO1993003502A1 (en) * 1991-07-26 1993-02-18 Nippondenso Co., Ltd. Method of producing vertical mosfet
JPH07142709A (en) * 1993-06-22 1995-06-02 Nec Corp Vertical mosfet
EP0676814A2 (en) * 1994-04-06 1995-10-11 Nippondenso Co., Ltd. Trench semiconductor device and process of producing same
EP0801426A2 (en) * 1996-04-10 1997-10-15 Harris Corporation Improved trench MOS gate device and method of producing the same
JPH09321289A (en) * 1996-05-30 1997-12-12 Nec Yamagata Ltd Vertical field-effect transistor
JPH1012877A (en) * 1996-06-27 1998-01-16 Nec Corp Vertical field effect transistor
WO1998026458A1 (en) * 1996-12-11 1998-06-18 The Kansai Electric Power Co., Inc. Insulated gate semiconductor device
US6015737A (en) * 1991-07-26 2000-01-18 Denso Corporation Production method of a vertical type MOSFET
US6084268A (en) * 1996-03-05 2000-07-04 Semiconductor Components Industries, Llc Power MOSFET device having low on-resistance and method
US6342709B1 (en) 1997-12-10 2002-01-29 The Kansai Electric Power Co., Inc. Insulated gate semiconductor device
WO2002015280A1 (en) * 2000-08-16 2002-02-21 Fairchild Semiconductor Corporation Thick oxide layer on bottom of trench structure in silicon
US6455378B1 (en) 1999-10-26 2002-09-24 Hitachi, Ltd. Method of manufacturing a trench gate power transistor with a thick bottom insulator
US6489652B1 (en) * 1995-11-11 2002-12-03 Fairchild Semiconductor Corporation Trench DMOS device having a high breakdown resistance
WO2003015180A2 (en) 2001-08-10 2003-02-20 Siliconix Incorporated Mis device having a trench gate electrode and method of making the same
JP2003509836A (en) * 1999-05-25 2003-03-11 ウィリアムス、リチャード・ケイ Method of manufacturing a semiconductor device and to a trench with a gate oxide layer having a plurality of thick
US6603173B1 (en) 1991-07-26 2003-08-05 Denso Corporation Vertical type MOSFET
JP2004500716A (en) * 2000-03-17 2004-01-08 ゼネラル　セミコンダクター，インク． Double diffused metal oxide semiconductor transistor and a manufacturing method thereof having a trench gate electrode
US6849898B2 (en) 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
US7009247B2 (en) 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7033876B2 (en) 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
WO2006082617A1 (en) * 2005-01-31 2006-08-10 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
WO2006087775A1 (en) * 2005-02-16 2006-08-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP2006332591A (en) * 2005-04-28 2006-12-07 Denso Corp Semiconductor device
JP2006351697A (en) * 2005-06-14 2006-12-28 Denso Corp Insulated-gate bipolar transistor and its manufacturing method
JP2007049204A (en) * 2006-11-15 2007-02-22 Mitsubishi Electric Corp Manufacturing method of semiconductor device having trench structure
US7229872B2 (en) 2000-04-04 2007-06-12 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
US7291884B2 (en) 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
JP2008021930A (en) * 2006-07-14 2008-01-31 Denso Corp Semiconductor device
EP1917683A2 (en) * 2005-08-17 2008-05-07 International Rectifier Corporation Power semiconductor device with interconnected gate trenches
JP2008547225A (en) * 2005-06-24 2008-12-25 フェアチャイルド・セミコンダクター・コーポレーション Structure and method for forming a dielectric layer extending laterally in the trench gate fet
JP2009503873A (en) * 2005-07-27 2009-01-29 インターナショナル レクティファイアー コーポレイション Split electrode gate trench power devices
JP2009224365A (en) * 2008-03-13 2009-10-01 Rohm Co Ltd Semiconductor device and method for fabricating the same
US7943990B2 (en) 2005-08-17 2011-05-17 International Rectifier Corporation Power semiconductor device with interconnected gate trenches
US8154073B2 (en) 2006-07-14 2012-04-10 Denso Corporation Semiconductor device
WO2012132229A1 (en) * 2011-03-30 2012-10-04 株式会社日立製作所 MANUFACTURING METHOD FOR TRENCH-TYPE SiC SEMICONDUCTOR DEVICE
US8283721B2 (en) 2008-03-26 2012-10-09 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US8598654B2 (en) 2011-03-16 2013-12-03 Fairchild Semiconductor Corporation MOSFET device with thick trench bottom oxide
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8889511B2 (en) 2003-05-20 2014-11-18 Fairchild Semiconductor Corporation Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
US8928077B2 (en) 2007-09-21 2015-01-06 Fairchild Semiconductor Corporation Superjunction structures for power devices
US9224853B2 (en) 2007-12-26 2015-12-29 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US9431481B2 (en) 2008-09-19 2016-08-30 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6864532B2 (en) 2000-01-14 2005-03-08 Denso Corporation Semiconductor device and method for manufacturing the same
JP4200626B2 (en) 2000-02-28 2008-12-24 株式会社デンソー Method of manufacturing insulated gate power device
JP4059510B2 (en) 2004-10-22 2008-03-12 株式会社東芝 Semiconductor device and manufacturing method thereof
JP5222466B2 (en) 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
JP2008159916A (en) 2006-12-25 2008-07-10 Sanyo Electric Co Ltd Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5858771A (en) * 1981-09-14 1983-04-07 Philips Nv Insulated gate field effect transistor and method of producing same
JPS62272570A (en) * 1986-03-24 1987-11-26 Siliconix Inc Planar vertical channel dmos structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5858771A (en) * 1981-09-14 1983-04-07 Philips Nv Insulated gate field effect transistor and method of producing same
JPS62272570A (en) * 1986-03-24 1987-11-26 Siliconix Inc Planar vertical channel dmos structure

Cited By (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126807A (en) * 1990-06-13 1992-06-30 Kabushiki Kaisha Toshiba Vertical MOS transistor and its production method
US6603173B1 (en) 1991-07-26 2003-08-05 Denso Corporation Vertical type MOSFET
WO1993003502A1 (en) * 1991-07-26 1993-02-18 Nippondenso Co., Ltd. Method of producing vertical mosfet
US5460985A (en) * 1991-07-26 1995-10-24 Ipics Corporation Production method of a verticle type MOSFET
US6015737A (en) * 1991-07-26 2000-01-18 Denso Corporation Production method of a vertical type MOSFET
JPH07142709A (en) * 1993-06-22 1995-06-02 Nec Corp Vertical mosfet
EP0676814A2 (en) * 1994-04-06 1995-10-11 Nippondenso Co., Ltd. Trench semiconductor device and process of producing same
EP0676814A3 (en) * 1994-04-06 1997-10-01 Nippon Denso Co Trench semiconductor device and process of producing same.
US6489652B1 (en) * 1995-11-11 2002-12-03 Fairchild Semiconductor Corporation Trench DMOS device having a high breakdown resistance
US6084268A (en) * 1996-03-05 2000-07-04 Semiconductor Components Industries, Llc Power MOSFET device having low on-resistance and method
EP0801426A3 (en) * 1996-04-10 1998-09-30 Harris Corporation Improved trench MOS gate device and method of producing the same
EP0801426A2 (en) * 1996-04-10 1997-10-15 Harris Corporation Improved trench MOS gate device and method of producing the same
JPH09321289A (en) * 1996-05-30 1997-12-12 Nec Yamagata Ltd Vertical field-effect transistor
JPH1012877A (en) * 1996-06-27 1998-01-16 Nec Corp Vertical field effect transistor
WO1998026458A1 (en) * 1996-12-11 1998-06-18 The Kansai Electric Power Co., Inc. Insulated gate semiconductor device
EP0893830A4 (en) * 1996-12-11 1999-02-17
US6342709B1 (en) 1997-12-10 2002-01-29 The Kansai Electric Power Co., Inc. Insulated gate semiconductor device
JP4834228B2 (en) * 1999-05-25 2011-12-14 ウィリアムス、リチャード・ケイＷＩＬＬＩＡＭＳ Ｒｉｃｈａｒｄ，Ｋ． Method of manufacturing a trench semiconductor device having a gate oxide layer having a plurality of thick
JP2003509836A (en) * 1999-05-25 2003-03-11 ウィリアムス、リチャード・ケイ Method of manufacturing a semiconductor device and to a trench with a gate oxide layer having a plurality of thick
US6455378B1 (en) 1999-10-26 2002-09-24 Hitachi, Ltd. Method of manufacturing a trench gate power transistor with a thick bottom insulator
JP2004500716A (en) * 2000-03-17 2004-01-08 ゼネラル　セミコンダクター，インク． Double diffused metal oxide semiconductor transistor and a manufacturing method thereof having a trench gate electrode
US8487368B2 (en) 2000-04-04 2013-07-16 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
US7229872B2 (en) 2000-04-04 2007-06-12 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
WO2002015280A1 (en) * 2000-08-16 2002-02-21 Fairchild Semiconductor Corporation Thick oxide layer on bottom of trench structure in silicon
JP2004507092A (en) * 2000-08-16 2004-03-04 フェアチャイルド　セミコンダクター　コーポレイション Thick oxide layer having a trench structure bottom in Silicon
US6437386B1 (en) * 2000-08-16 2002-08-20 Fairchild Semiconductor Corporation Method for creating thick oxide on the bottom surface of a trench structure in silicon
US6861296B2 (en) 2000-08-16 2005-03-01 Fairchild Semiconductor Corporation Method for creating thick oxide on the bottom surface of a trench structure in silicon
US9368587B2 (en) 2001-01-30 2016-06-14 Fairchild Semiconductor Corporation Accumulation-mode field effect transistor with improved current capability
US7435650B2 (en) 2001-07-03 2008-10-14 Siliconix Incorporated Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide
US7291884B2 (en) 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7009247B2 (en) 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7033876B2 (en) 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US7326995B2 (en) 2001-07-03 2008-02-05 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US7416947B2 (en) 2001-07-03 2008-08-26 Siliconix Incorporated Method of fabricating trench MIS device with thick oxide layer in bottom of trench
JP2009152630A (en) * 2001-08-10 2009-07-09 Siliconix Inc Trench mis device having active trench corner and thick-bottom oxide, and method of manufacturing the same
US6849898B2 (en) 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
WO2003015180A3 (en) * 2001-08-10 2003-11-06 Siliconix Inc Mis device having a trench gate electrode and method of making the same
KR100771815B1 (en) * 2001-08-10 2007-10-30 실리코닉스 인코퍼레이티드 Trench mis device with active trench corners and thick bottom oxide and method of making the same
WO2003015180A2 (en) 2001-08-10 2003-02-20 Siliconix Incorporated Mis device having a trench gate electrode and method of making the same
US6903412B2 (en) 2001-08-10 2005-06-07 Siliconix Incorporated Trench MIS device with graduated gate oxide layer
US6875657B2 (en) 2001-08-10 2005-04-05 Siliconix Incorporated Method of fabricating trench MIS device with graduated gate oxide layer
US8889511B2 (en) 2003-05-20 2014-11-18 Fairchild Semiconductor Corporation Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor
US8936985B2 (en) 2003-05-20 2015-01-20 Fairchild Semiconductor Corporation Methods related to power semiconductor devices with thick bottom oxide layers
WO2006082617A1 (en) * 2005-01-31 2006-08-10 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP4794545B2 (en) * 2005-01-31 2011-10-19 新電元工業株式会社 Semiconductor device
US7573096B2 (en) 2005-02-16 2009-08-11 Shindengen Electric Manufacturing Co, Ltd. Semiconductor device for reducing forward voltage by using OHMIC contact
WO2006087775A1 (en) * 2005-02-16 2006-08-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP4896001B2 (en) * 2005-02-16 2012-03-14 新電元工業株式会社 Semiconductor device
JP2006332591A (en) * 2005-04-28 2006-12-07 Denso Corp Semiconductor device
JP2006351697A (en) * 2005-06-14 2006-12-28 Denso Corp Insulated-gate bipolar transistor and its manufacturing method
JP2008547225A (en) * 2005-06-24 2008-12-25 フェアチャイルド・セミコンダクター・コーポレーション Structure and method for forming a dielectric layer extending laterally in the trench gate fet
JP2009503873A (en) * 2005-07-27 2009-01-29 インターナショナル レクティファイアー コーポレイション Split electrode gate trench power devices
EP1917683A2 (en) * 2005-08-17 2008-05-07 International Rectifier Corporation Power semiconductor device with interconnected gate trenches
US7943990B2 (en) 2005-08-17 2011-05-17 International Rectifier Corporation Power semiconductor device with interconnected gate trenches
EP1917683A4 (en) * 2005-08-17 2008-11-05 Int Rectifier Corp Power semiconductor device with interconnected gate trenches
JP2008021930A (en) * 2006-07-14 2008-01-31 Denso Corp Semiconductor device
US9136333B2 (en) 2006-07-14 2015-09-15 Denso Corporation Semiconductor device
US8154073B2 (en) 2006-07-14 2012-04-10 Denso Corporation Semiconductor device
JP2007049204A (en) * 2006-11-15 2007-02-22 Mitsubishi Electric Corp Manufacturing method of semiconductor device having trench structure
US8928077B2 (en) 2007-09-21 2015-01-06 Fairchild Semiconductor Corporation Superjunction structures for power devices
US9595596B2 (en) 2007-09-21 2017-03-14 Fairchild Semiconductor Corporation Superjunction structures for power devices
US9224853B2 (en) 2007-12-26 2015-12-29 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
JP2009224365A (en) * 2008-03-13 2009-10-01 Rohm Co Ltd Semiconductor device and method for fabricating the same
US8283721B2 (en) 2008-03-26 2012-10-09 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US9166038B2 (en) 2008-03-26 2015-10-20 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US9496387B2 (en) 2008-03-26 2016-11-15 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
EP2966690A1 (en) 2008-03-26 2016-01-13 Rohm Co., Ltd. Semiconductor device, and method for manufacturing the same
US9431481B2 (en) 2008-09-19 2016-08-30 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8598654B2 (en) 2011-03-16 2013-12-03 Fairchild Semiconductor Corporation MOSFET device with thick trench bottom oxide
WO2012132229A1 (en) * 2011-03-30 2012-10-04 株式会社日立製作所 MANUFACTURING METHOD FOR TRENCH-TYPE SiC SEMICONDUCTOR DEVICE
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture

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