ITVA20050038A1 - Transistore bipolare di potenza e relativo dispositivo integrato con clamp della tensione di collettore - Google Patents
Transistore bipolare di potenza e relativo dispositivo integrato con clamp della tensione di collettoreInfo
- Publication number
- ITVA20050038A1 ITVA20050038A1 IT000038A ITVA20050038A ITVA20050038A1 IT VA20050038 A1 ITVA20050038 A1 IT VA20050038A1 IT 000038 A IT000038 A IT 000038A IT VA20050038 A ITVA20050038 A IT VA20050038A IT VA20050038 A1 ITVA20050038 A1 IT VA20050038A1
- Authority
- IT
- Italy
- Prior art keywords
- power transistor
- integrated device
- voltage clamp
- bipolar power
- manifold
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000038A ITVA20050038A1 (it) | 2005-06-10 | 2005-06-10 | Transistore bipolare di potenza e relativo dispositivo integrato con clamp della tensione di collettore |
| US11/423,335 US7528461B2 (en) | 2005-06-10 | 2006-06-09 | Bipolar power transistor and related integrated device with clamp means of the collector voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT000038A ITVA20050038A1 (it) | 2005-06-10 | 2005-06-10 | Transistore bipolare di potenza e relativo dispositivo integrato con clamp della tensione di collettore |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ITVA20050038A1 true ITVA20050038A1 (it) | 2006-12-11 |
Family
ID=37660925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT000038A ITVA20050038A1 (it) | 2005-06-10 | 2005-06-10 | Transistore bipolare di potenza e relativo dispositivo integrato con clamp della tensione di collettore |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7528461B2 (it) |
| IT (1) | ITVA20050038A1 (it) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102076135B1 (ko) | 2012-12-27 | 2020-02-11 | 에스케이하이닉스 주식회사 | 반도체 장치 |
| GB2533063B (en) * | 2014-01-16 | 2016-09-28 | Ideal Power Inc | Semiconductor device structures with reduced sensitivity to surface charge |
| CN105392214B (zh) * | 2014-09-02 | 2021-06-01 | 三星电子株式会社 | 在无线通信系统中控制传输控制协议连接的装置和方法 |
| CN107275381B (zh) * | 2017-06-14 | 2019-08-13 | 四川大学 | 一种双重载流子存储增强的igbt |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE175523T1 (de) * | 1993-09-17 | 1999-01-15 | Cons Ric Microelettronica | Eine integrierte vorrichtung mit einem bipolaren transistor und einem mosfet transistor in emittorschaltungsanordnung |
| KR950021600A (ko) * | 1993-12-09 | 1995-07-26 | 가나이 쯔또무 | 반도체 집적회로장치 및 그 제조방법 |
| EP1028468A1 (en) * | 1999-02-09 | 2000-08-16 | STMicroelectronics S.r.l. | Biasing circuit for isolation region in integrated power circuit |
| ITVA20020034A1 (it) * | 2002-05-15 | 2003-11-17 | St Microelectronics Srl | Costituzione di un condensatore integrato di monitoraggio della tensione applicata ad un terminale di un dispositivo di potenza integrato o |
| US6815800B2 (en) * | 2002-12-09 | 2004-11-09 | Micrel, Inc. | Bipolar junction transistor with reduced parasitic bipolar conduction |
-
2005
- 2005-06-10 IT IT000038A patent/ITVA20050038A1/it unknown
-
2006
- 2006-06-09 US US11/423,335 patent/US7528461B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7528461B2 (en) | 2009-05-05 |
| US20070013032A1 (en) | 2007-01-18 |
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