ITMI20050608A1 - Dispositivo elettronico di memoria non volatile a struttura cnand integrato monoliticamente su semiconduttore - Google Patents

Dispositivo elettronico di memoria non volatile a struttura cnand integrato monoliticamente su semiconduttore

Info

Publication number
ITMI20050608A1
ITMI20050608A1 IT000608A ITMI20050608A ITMI20050608A1 IT MI20050608 A1 ITMI20050608 A1 IT MI20050608A1 IT 000608 A IT000608 A IT 000608A IT MI20050608 A ITMI20050608 A IT MI20050608A IT MI20050608 A1 ITMI20050608 A1 IT MI20050608A1
Authority
IT
Italy
Prior art keywords
cnand
semiconductor
electronic device
volatile memory
structure integrated
Prior art date
Application number
IT000608A
Other languages
English (en)
Inventor
Giovanni Campardo
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000608A priority Critical patent/ITMI20050608A1/it
Priority to EP06007497A priority patent/EP1713081A1/en
Priority to US11/401,521 priority patent/US7675788B2/en
Publication of ITMI20050608A1 publication Critical patent/ITMI20050608A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
IT000608A 2005-04-11 2005-04-11 Dispositivo elettronico di memoria non volatile a struttura cnand integrato monoliticamente su semiconduttore ITMI20050608A1 (it)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IT000608A ITMI20050608A1 (it) 2005-04-11 2005-04-11 Dispositivo elettronico di memoria non volatile a struttura cnand integrato monoliticamente su semiconduttore
EP06007497A EP1713081A1 (en) 2005-04-11 2006-04-10 Electronic non-volatile memory device having a "code NAND" structure and being monolithically integrated on a semiconductor substrate
US11/401,521 US7675788B2 (en) 2005-04-11 2006-04-11 Electronic non-volatile memory device having a cNAND structure and being monolithically integrated on semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000608A ITMI20050608A1 (it) 2005-04-11 2005-04-11 Dispositivo elettronico di memoria non volatile a struttura cnand integrato monoliticamente su semiconduttore

Publications (1)

Publication Number Publication Date
ITMI20050608A1 true ITMI20050608A1 (it) 2006-10-12

Family

ID=36754314

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000608A ITMI20050608A1 (it) 2005-04-11 2005-04-11 Dispositivo elettronico di memoria non volatile a struttura cnand integrato monoliticamente su semiconduttore

Country Status (3)

Country Link
US (1) US7675788B2 (it)
EP (1) EP1713081A1 (it)
IT (1) ITMI20050608A1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
CN114093874A (zh) * 2020-05-20 2022-02-25 长江存储科技有限责任公司 3d nand闪速存储器件及其集成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275657A (ja) * 1992-03-26 1993-10-22 Toshiba Corp 半導体記憶装置
JPH1027484A (ja) * 1996-07-11 1998-01-27 Toshiba Corp 半導体不揮発性記憶装置
US6032248A (en) * 1998-04-29 2000-02-29 Atmel Corporation Microcontroller including a single memory module having a data memory sector and a code memory sector and supporting simultaneous read/write access to both sectors
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US6175523B1 (en) * 1999-10-25 2001-01-16 Advanced Micro Devices, Inc Precharging mechanism and method for NAND-based flash memory devices
KR100387529B1 (ko) * 2001-06-11 2003-06-18 삼성전자주식회사 랜덤 억세스 가능한 메모리 셀 어레이를 갖는 불휘발성반도체 메모리 장치
JP2003203997A (ja) * 2002-01-07 2003-07-18 Mitsubishi Electric Corp 不揮発性半導体記憶装置及びその製造方法
JP2004326864A (ja) * 2003-04-22 2004-11-18 Toshiba Corp 不揮発性半導体メモリ
JP3947135B2 (ja) * 2003-05-30 2007-07-18 株式会社東芝 不揮発性半導体記憶装置
US8824205B2 (en) * 2005-04-11 2014-09-02 Micron Technology, Inc. Non-volatile electronic memory device with NAND structure being monolithically integrated on semiconductor
ITRM20050353A1 (it) * 2005-07-04 2007-01-05 Micron Technology Inc Amplificatore di rilevazione di piu' bit a bassa potenza.

Also Published As

Publication number Publication date
US20060250847A1 (en) 2006-11-09
US7675788B2 (en) 2010-03-09
EP1713081A1 (en) 2006-10-18

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