FR2883416B1 - Dispositif a semiconducteur. - Google Patents

Dispositif a semiconducteur.

Info

Publication number
FR2883416B1
FR2883416B1 FR0511290A FR0511290A FR2883416B1 FR 2883416 B1 FR2883416 B1 FR 2883416B1 FR 0511290 A FR0511290 A FR 0511290A FR 0511290 A FR0511290 A FR 0511290A FR 2883416 B1 FR2883416 B1 FR 2883416B1
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0511290A
Other languages
English (en)
Other versions
FR2883416A1 (fr
Inventor
Makoto Kondou
Kiyoshi Arai
Jose Saiz
Pierre Solomalala
Emmanuel Dutarde
Benoit Boursat
Philippe Lasserre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alstom Transport Technologies SAS
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2883416A1 publication Critical patent/FR2883416A1/fr
Application granted granted Critical
Publication of FR2883416B1 publication Critical patent/FR2883416B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
FR0511290A 2005-03-15 2005-11-07 Dispositif a semiconducteur. Active FR2883416B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005072517A JP4478049B2 (ja) 2005-03-15 2005-03-15 半導体装置

Publications (2)

Publication Number Publication Date
FR2883416A1 FR2883416A1 (fr) 2006-09-22
FR2883416B1 true FR2883416B1 (fr) 2012-07-20

Family

ID=36942469

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0511290A Active FR2883416B1 (fr) 2005-03-15 2005-11-07 Dispositif a semiconducteur.

Country Status (3)

Country Link
US (1) US7479693B2 (fr)
JP (1) JP4478049B2 (fr)
FR (1) FR2883416B1 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880283B2 (en) * 2006-04-25 2011-02-01 International Rectifier Corporation High reliability power module
JP2009044033A (ja) * 2007-08-10 2009-02-26 Seiko Epson Corp 半導体レーザ、光源装置、照明装置、プロジェクタおよびモニタ装置
JP5245485B2 (ja) 2008-03-25 2013-07-24 富士電機株式会社 半導体装置の製造方法
JP5365627B2 (ja) * 2008-04-09 2013-12-11 富士電機株式会社 半導体装置及び半導体装置の製造方法
JP5777203B2 (ja) * 2011-03-22 2015-09-09 ニチコン株式会社 パワーモジュール
JP6132769B2 (ja) * 2011-10-21 2017-05-24 パナソニック株式会社 半導体装置
JP5888010B2 (ja) * 2012-03-08 2016-03-16 日産自動車株式会社 インバータモジュール
EP4293714A3 (fr) 2012-09-20 2024-02-28 Rohm Co., Ltd. Module de dispositif semi-conducteur de puissance
DE102014109816B4 (de) * 2014-07-14 2016-11-03 Infineon Technologies Ag Leistungshalbleitermodul und System mit mindestens zwei Leistungshalbleitermodulen
JP6743542B2 (ja) * 2016-07-15 2020-08-19 富士電機株式会社 半導体装置及び半導体装置用ケース

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166773A (en) * 1989-07-03 1992-11-24 General Electric Company Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid
JPH06181286A (ja) 1992-12-14 1994-06-28 Toshiba Corp 半導体装置
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法
JP3879150B2 (ja) 1996-08-12 2007-02-07 株式会社デンソー 半導体装置
JPH1064956A (ja) * 1996-08-20 1998-03-06 Fujitsu Ltd フェースダウンボンディング半導体装置
US6286206B1 (en) * 1997-02-25 2001-09-11 Chou H. Li Heat-resistant electronic systems and circuit boards
US6060772A (en) * 1997-06-30 2000-05-09 Kabushiki Kaisha Toshiba Power semiconductor module with a plurality of semiconductor chips
US5854507A (en) * 1998-07-21 1998-12-29 Hewlett-Packard Company Multiple chip assembly
JP3525753B2 (ja) 1998-08-26 2004-05-10 株式会社豊田中央研究所 パワーモジュール
JP2000124398A (ja) 1998-10-16 2000-04-28 Mitsubishi Electric Corp パワー半導体モジュール
FR2786655B1 (fr) 1998-11-27 2001-11-23 Alstom Technology Dispositif electronique de puissance
FR2786656B1 (fr) 1998-11-27 2001-01-26 Alstom Technology Composant electronique de puissance comportant des moyens de refroidissement
JP3903681B2 (ja) 1999-03-11 2007-04-11 三菱マテリアル株式会社 半導体装置
FR2811475B1 (fr) 2000-07-07 2002-08-23 Alstom Procede de fabrication d'un composant electronique de puissance, et composant electronique de puissance ainsi obtenu
JP2002026251A (ja) 2000-07-11 2002-01-25 Toshiba Corp 半導体装置
FR2835651B1 (fr) * 2002-02-06 2005-04-15 St Microelectronics Sa Dispositif de montage d'un boitier semi-conducteur sur une plaque-support par l'intermediaire d'une embase
SG121707A1 (en) * 2002-03-04 2006-05-26 Micron Technology Inc Method and apparatus for flip-chip packaging providing testing capability
US7247517B2 (en) * 2003-09-30 2007-07-24 Intel Corporation Method and apparatus for a dual substrate package
JP4491244B2 (ja) 2004-01-07 2010-06-30 三菱電機株式会社 電力半導体装置

Also Published As

Publication number Publication date
JP4478049B2 (ja) 2010-06-09
US7479693B2 (en) 2009-01-20
JP2006261168A (ja) 2006-09-28
US20060220213A1 (en) 2006-10-05
FR2883416A1 (fr) 2006-09-22

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