JPH11329923A5 - - Google Patents

Info

Publication number
JPH11329923A5
JPH11329923A5 JP1998126945A JP12694598A JPH11329923A5 JP H11329923 A5 JPH11329923 A5 JP H11329923A5 JP 1998126945 A JP1998126945 A JP 1998126945A JP 12694598 A JP12694598 A JP 12694598A JP H11329923 A5 JPH11329923 A5 JP H11329923A5
Authority
JP
Japan
Prior art keywords
wafer alignment
alignment mark
semiconductor
semiconductor substrate
positional relationship
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998126945A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11329923A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10126945A priority Critical patent/JPH11329923A/ja
Priority claimed from JP10126945A external-priority patent/JPH11329923A/ja
Priority to EP99108764A priority patent/EP0961320A3/en
Priority to TW088107163A priority patent/TW432708B/zh
Priority to US09/306,727 priority patent/US6358814B1/en
Priority to KR1019990016707A priority patent/KR100610717B1/ko
Publication of JPH11329923A publication Critical patent/JPH11329923A/ja
Publication of JPH11329923A5 publication Critical patent/JPH11329923A5/ja
Pending legal-status Critical Current

Links

JP10126945A 1998-05-11 1998-05-11 半導体装置の製造方法 Pending JPH11329923A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10126945A JPH11329923A (ja) 1998-05-11 1998-05-11 半導体装置の製造方法
EP99108764A EP0961320A3 (en) 1998-05-11 1999-05-03 Semiconductor wafer comprising an epitaxial layer and an alignment mark
TW088107163A TW432708B (en) 1998-05-11 1999-05-03 Method for enhancing the alignment accuracy of semiconductor devices
US09/306,727 US6358814B1 (en) 1998-05-11 1999-05-07 Method for manufacturing semiconductor devices having an epitaxial layer and wafer alignment marks
KR1019990016707A KR100610717B1 (ko) 1998-05-11 1999-05-11 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10126945A JPH11329923A (ja) 1998-05-11 1998-05-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH11329923A JPH11329923A (ja) 1999-11-30
JPH11329923A5 true JPH11329923A5 (enExample) 2005-09-08

Family

ID=14947792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10126945A Pending JPH11329923A (ja) 1998-05-11 1998-05-11 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US6358814B1 (enExample)
EP (1) EP0961320A3 (enExample)
JP (1) JPH11329923A (enExample)
KR (1) KR100610717B1 (enExample)
TW (1) TW432708B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531374B2 (en) * 2001-08-10 2003-03-11 Taiwan Semiconductor Manufacturing Co., Ltd Overlay shift correction for the deposition of epitaxial silicon layer and post-epitaxial silicon layers in a semiconductor device
FR2869459B1 (fr) 2004-04-21 2006-08-04 Commissariat Energie Atomique Realignement entre niveaux apres une etape d'epitaxie.
US11329002B2 (en) 2017-08-21 2022-05-10 Sony Semiconductor Solutions Corporation Semiconductor device and fabrication method for semiconductor device
CN113109997B (zh) * 2021-03-18 2022-08-26 上海信及光子集成技术有限公司 测量外延前后光刻套刻误差的方法及结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4632724A (en) * 1985-08-19 1986-12-30 International Business Machines Corporation Visibility enhancement of first order alignment marks
US4936930A (en) * 1988-01-06 1990-06-26 Siliconix Incorporated Method for improved alignment for semiconductor devices with buried layers
JPH0291690A (ja) * 1988-09-28 1990-03-30 Toshiba Corp 拡大縮小表示方式
JPH0478123A (ja) * 1990-07-20 1992-03-12 Fujitsu Ltd 半導体装置の製造方法
US5300797A (en) * 1992-03-31 1994-04-05 Sgs-Thomson Microelectronics, Inc. Coplanar twin-well integrated circuit structure
JPH05343319A (ja) * 1992-06-09 1993-12-24 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JPH07130603A (ja) * 1993-06-24 1995-05-19 Hitachi Ltd 半導体装置の製造方法
KR0170909B1 (ko) * 1995-09-27 1999-03-30 김주용 반도체 소자의 오버레이 검사방법
JPH09181189A (ja) * 1995-12-25 1997-07-11 Toshiba Corp 半導体装置の製造方法

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