TW359002B - Manufacturing method of field oxide insulation cells - Google Patents

Abstract

Manufacturing method of field oxide insulation cells, including the following steps: (a) provision of a substrate, forming the first oxide layer on the substrate; (b) defining a first oxide layer patterns, exposing the substrate, with the substrate without the first oxide layer as the first component sector, including the substrate of the first oxide layer as the second component sector; (c) forming a second oxide layer between the substrate and the first oxide layer; (d) forming a silicon nitride layer on the surface of the second oxide layer; (e) coating of a photoresist layer on the surface of the silicon nitride layer, for defining the patterns of the photoresist for defining on the substrate a plurality of active sectors; (f) removal of the silicon nitride layer the second oxide layer and the first oxide layer with the photoresist as mask, and exposing the substrate and then removal of the photoresist layer; and (g) oxidization to the exposed substrate, for forming a plurality of first oxide layers in the first component sector and a plurality of second oxide layers on the surface of the second component, for completing the making of the field oxide insulation cells.