JP4363736B2 - トランジスタ及びその製造方法 - Google Patents

トランジスタ及びその製造方法 Download PDF

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Publication number
JP4363736B2
JP4363736B2 JP2000055387A JP2000055387A JP4363736B2 JP 4363736 B2 JP4363736 B2 JP 4363736B2 JP 2000055387 A JP2000055387 A JP 2000055387A JP 2000055387 A JP2000055387 A JP 2000055387A JP 4363736 B2 JP4363736 B2 JP 4363736B2
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JP
Japan
Prior art keywords
gate
semiconductor material
conductivity type
drain layer
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000055387A
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English (en)
Japanese (ja)
Other versions
JP2001244462A (ja
JP2001244462A5 (enExample
Inventor
瑞枝 北田
俊之 竹森
伸治 九里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP2000055387A priority Critical patent/JP4363736B2/ja
Priority to EP01104921A priority patent/EP1130653A3/en
Priority to US09/793,964 priority patent/US6573559B2/en
Publication of JP2001244462A publication Critical patent/JP2001244462A/ja
Priority to US10/401,672 priority patent/US6706615B2/en
Publication of JP2001244462A5 publication Critical patent/JP2001244462A5/ja
Application granted granted Critical
Publication of JP4363736B2 publication Critical patent/JP4363736B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000055387A 2000-03-01 2000-03-01 トランジスタ及びその製造方法 Expired - Fee Related JP4363736B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000055387A JP4363736B2 (ja) 2000-03-01 2000-03-01 トランジスタ及びその製造方法
EP01104921A EP1130653A3 (en) 2000-03-01 2001-02-28 Field-effect transistor and method of making the same
US09/793,964 US6573559B2 (en) 2000-03-01 2001-02-28 Transistor and method of manufacturing the same
US10/401,672 US6706615B2 (en) 2000-03-01 2003-03-31 Method of manufacturing a transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000055387A JP4363736B2 (ja) 2000-03-01 2000-03-01 トランジスタ及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001244462A JP2001244462A (ja) 2001-09-07
JP2001244462A5 JP2001244462A5 (enExample) 2005-12-15
JP4363736B2 true JP4363736B2 (ja) 2009-11-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000055387A Expired - Fee Related JP4363736B2 (ja) 2000-03-01 2000-03-01 トランジスタ及びその製造方法

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Country Link
US (2) US6573559B2 (enExample)
EP (1) EP1130653A3 (enExample)
JP (1) JP4363736B2 (enExample)

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JP4363736B2 (ja) * 2000-03-01 2009-11-11 新電元工業株式会社 トランジスタ及びその製造方法
JP4865166B2 (ja) * 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法
JP3914785B2 (ja) 2002-02-20 2007-05-16 新電元工業株式会社 ダイオード素子
EP2259325B1 (en) 2002-02-20 2013-12-25 Shindengen Electric Manufacturing Co., Ltd. Transistor device
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JP4274771B2 (ja) 2002-10-04 2009-06-10 新電元工業株式会社 半導体装置
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KR100958561B1 (ko) * 2002-10-04 2010-05-17 신덴겐코교 가부시키가이샤 반도체 장치, 반도체 장치의 제조 방법
JP5299373B2 (ja) * 2003-01-16 2013-09-25 富士電機株式会社 半導体素子
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JP5825201B2 (ja) * 2012-03-05 2015-12-02 株式会社デンソー 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
EP1130653A3 (en) 2008-03-05
US6706615B2 (en) 2004-03-16
US20030203576A1 (en) 2003-10-30
US20010052617A1 (en) 2001-12-20
JP2001244462A (ja) 2001-09-07
US6573559B2 (en) 2003-06-03
EP1130653A2 (en) 2001-09-05

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