JP2004508720A5 - - Google Patents
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- Publication number
- JP2004508720A5 JP2004508720A5 JP2002524235A JP2002524235A JP2004508720A5 JP 2004508720 A5 JP2004508720 A5 JP 2004508720A5 JP 2002524235 A JP2002524235 A JP 2002524235A JP 2002524235 A JP2002524235 A JP 2002524235A JP 2004508720 A5 JP2004508720 A5 JP 2004508720A5
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- JP
- Japan
- Prior art keywords
- semiconductor chip
- layer
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- individual
- reflects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 claims 7
- 230000005855 radiation Effects 0.000 claims 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10042947A DE10042947A1 (de) | 2000-08-31 | 2000-08-31 | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
| PCT/DE2001/003348 WO2002019439A1 (de) | 2000-08-31 | 2001-08-31 | Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips auf iii-v-nitridhalbleiter-basis und strahlungsemittierender halbleiterchip |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007072671A Division JP5183085B2 (ja) | 2000-08-31 | 2007-03-20 | 放射線を発する半導体チップ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004508720A JP2004508720A (ja) | 2004-03-18 |
| JP2004508720A5 true JP2004508720A5 (enExample) | 2005-03-03 |
| JP4177097B2 JP4177097B2 (ja) | 2008-11-05 |
Family
ID=7654526
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002524235A Expired - Lifetime JP4177097B2 (ja) | 2000-08-31 | 2001-08-31 | Iii−v窒化物半導体ベースの放射線を発する半導体チップを製造する方法および放射線を発する半導体チップ |
| JP2007072671A Expired - Lifetime JP5183085B2 (ja) | 2000-08-31 | 2007-03-20 | 放射線を発する半導体チップ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007072671A Expired - Lifetime JP5183085B2 (ja) | 2000-08-31 | 2007-03-20 | 放射線を発する半導体チップ |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6849878B2 (enExample) |
| EP (1) | EP1314209B1 (enExample) |
| JP (2) | JP4177097B2 (enExample) |
| CN (1) | CN1471735B (enExample) |
| DE (1) | DE10042947A1 (enExample) |
| TW (1) | TW584971B (enExample) |
| WO (1) | WO2002019439A1 (enExample) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1292494C (zh) * | 2000-04-26 | 2006-12-27 | 奥斯兰姆奥普托半导体有限责任公司 | 发光半导体元件及其制造方法 |
| EP1277241B1 (de) * | 2000-04-26 | 2017-12-13 | OSRAM Opto Semiconductors GmbH | Lumineszenzdiodenchip auf der basis von gan |
| DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
| TWI289944B (en) * | 2000-05-26 | 2007-11-11 | Osram Opto Semiconductors Gmbh | Light-emitting-diode-element with a light-emitting-diode-chip |
| JP4250909B2 (ja) * | 2002-05-20 | 2009-04-08 | ソニー株式会社 | 半導体素子の分離方法および転写方法 |
| GB2388957A (en) * | 2002-05-24 | 2003-11-26 | Imp College Innovations Ltd | Quantum dots for extended wavelength operation |
| US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| DE10245631B4 (de) * | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
| DE10350707B4 (de) * | 2003-02-26 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Elektrischer Kontakt für optoelektronischen Halbleiterchip und Verfahren zu dessen Herstellung |
| TWI243488B (en) | 2003-02-26 | 2005-11-11 | Osram Opto Semiconductors Gmbh | Electrical contact-area for optoelectronic semiconductor-chip and its production method |
| EP1620903B1 (en) * | 2003-04-30 | 2017-08-16 | Cree, Inc. | High-power solid state light emitter package |
| US7589003B2 (en) * | 2003-06-13 | 2009-09-15 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law | GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon |
| WO2005015609A2 (en) * | 2003-06-13 | 2005-02-17 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn |
| JP4218597B2 (ja) | 2003-08-08 | 2009-02-04 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
| JP4110222B2 (ja) | 2003-08-20 | 2008-07-02 | 住友電気工業株式会社 | 発光ダイオード |
| EP1569263B1 (de) * | 2004-02-27 | 2011-11-23 | OSRAM Opto Semiconductors GmbH | Verfahren zum Verbinden zweier Wafer |
| US7332365B2 (en) * | 2004-05-18 | 2008-02-19 | Cree, Inc. | Method for fabricating group-III nitride devices and devices fabricated using method |
| US7791061B2 (en) * | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
| US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| US8513686B2 (en) * | 2004-09-22 | 2013-08-20 | Cree, Inc. | High output small area group III nitride LEDs |
| US7259402B2 (en) * | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
| US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
| US8174037B2 (en) * | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
| US8288942B2 (en) * | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
| US7932111B2 (en) * | 2005-02-23 | 2011-04-26 | Cree, Inc. | Substrate removal process for high light extraction LEDs |
| KR100631980B1 (ko) * | 2005-04-06 | 2006-10-11 | 삼성전기주식회사 | 질화물 반도체 소자 |
| US8575651B2 (en) * | 2005-04-11 | 2013-11-05 | Cree, Inc. | Devices having thick semi-insulating epitaxial gallium nitride layer |
| US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
| CN1988109B (zh) * | 2005-12-21 | 2012-03-21 | 弗赖贝格化合物原料有限公司 | 生产自支撑iii-n层和自支撑iii-n基底的方法 |
| US20070194342A1 (en) * | 2006-01-12 | 2007-08-23 | Kinzer Daniel M | GaN SEMICONDUCTOR DEVICE AND PROCESS EMPLOYING GaN ON THIN SAPHIRE LAYER ON POLYCRYSTALLINE SILICON CARBIDE |
| US8008676B2 (en) | 2006-05-26 | 2011-08-30 | Cree, Inc. | Solid state light emitting device and method of making same |
| BRPI0712439B1 (pt) * | 2006-05-31 | 2019-11-05 | Cree, Inc. | dispositivo de iluminação e método de iluminação |
| TW200802941A (en) * | 2006-06-22 | 2008-01-01 | Univ Nat Central | A quantum photoelectric element of antimony compound |
| DE102006060410A1 (de) * | 2006-06-30 | 2008-01-03 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaserchip |
| US7885306B2 (en) * | 2006-06-30 | 2011-02-08 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser chip |
| EP2060155A2 (en) * | 2006-08-23 | 2009-05-20 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| CN101529162B (zh) * | 2006-09-23 | 2012-01-11 | 绎立锐光科技开发公司 | 发光二极管的亮度增强方法和装置 |
| CN101622493A (zh) * | 2006-12-04 | 2010-01-06 | 科锐Led照明科技公司 | 照明装置和照明方法 |
| WO2008070607A1 (en) | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting assembly and lighting method |
| US8026517B2 (en) * | 2007-05-10 | 2011-09-27 | Industrial Technology Research Institute | Semiconductor structures |
| US20080303033A1 (en) * | 2007-06-05 | 2008-12-11 | Cree, Inc. | Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates |
| JP5431320B2 (ja) * | 2007-07-17 | 2014-03-05 | クリー インコーポレイテッド | 内部光学機能を備えた光学素子およびその製造方法 |
| KR100872678B1 (ko) * | 2007-07-23 | 2008-12-10 | 엘지이노텍 주식회사 | 반도체 발광소자의 제조 방법 |
| JP4148367B1 (ja) | 2007-08-02 | 2008-09-10 | 富山県 | 細胞のスクリーニング方法 |
| US8617997B2 (en) * | 2007-08-21 | 2013-12-31 | Cree, Inc. | Selective wet etching of gold-tin based solder |
| US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
| JP5212777B2 (ja) * | 2007-11-28 | 2013-06-19 | スタンレー電気株式会社 | 半導体発光装置及び照明装置 |
| US20110114022A1 (en) * | 2007-12-12 | 2011-05-19 | Veeco Instruments Inc. | Wafer carrier with hub |
| US8021487B2 (en) | 2007-12-12 | 2011-09-20 | Veeco Instruments Inc. | Wafer carrier with hub |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US9012253B2 (en) * | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
| DE102009060749B4 (de) | 2009-12-30 | 2021-12-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
| US8997832B1 (en) | 2010-11-23 | 2015-04-07 | Western Digital (Fremont), Llc | Method of fabricating micrometer scale components |
| US20130330911A1 (en) * | 2012-06-08 | 2013-12-12 | Yi-Chiau Huang | Method of semiconductor film stabilization |
| US10134727B2 (en) | 2012-09-28 | 2018-11-20 | Intel Corporation | High breakdown voltage III-N depletion mode MOS capacitors |
| US9064709B2 (en) * | 2012-09-28 | 2015-06-23 | Intel Corporation | High breakdown voltage III-N depletion mode MOS capacitors |
| WO2014093555A1 (en) * | 2012-12-11 | 2014-06-19 | Massachusetts Institute Of Technology | Reducing leakage current in semiconductor devices |
| US8896008B2 (en) | 2013-04-23 | 2014-11-25 | Cree, Inc. | Light emitting diodes having group III nitride surface features defined by a mask and crystal planes |
| DE102014116141B4 (de) | 2014-11-05 | 2022-07-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement |
| DE102017108385A1 (de) * | 2017-04-20 | 2018-10-25 | Osram Opto Semiconductors Gmbh | Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern |
| TWI637481B (zh) * | 2017-11-29 | 2018-10-01 | 財團法人工業技術研究院 | 半導體結構、發光裝置及其製造方法 |
| DE102018104778A1 (de) | 2018-03-02 | 2019-09-05 | Osram Opto Semiconductors Gmbh | Bauteilverbund aus optischen Bauteilen, Verfahren zur Herstellung eines Bauteilverbunds und Bauelement mit einem optischen Bauteil |
| DE102018104785A1 (de) * | 2018-03-02 | 2019-09-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von transferierbaren Bauteilen und Bauteilverbund aus Bauteilen |
| CN115347450A (zh) * | 2022-08-22 | 2022-11-15 | 福建慧芯激光科技有限公司 | 一种iii-v族化合物半导体光芯片与硅基电芯片实现晶圆级别集成的方法 |
Family Cites Families (45)
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|---|---|---|---|---|
| JPH0760790B2 (ja) * | 1987-05-13 | 1995-06-28 | シャープ株式会社 | 化合物半導体基板 |
| US4912532A (en) * | 1988-08-26 | 1990-03-27 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
| JP2542447B2 (ja) * | 1990-04-13 | 1996-10-09 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
| US5244818A (en) * | 1992-04-08 | 1993-09-14 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
| US5286335A (en) * | 1992-04-08 | 1994-02-15 | Georgia Tech Research Corporation | Processes for lift-off and deposition of thin film materials |
| US5391257A (en) * | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
| US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
| JP2669368B2 (ja) * | 1994-03-16 | 1997-10-27 | 日本電気株式会社 | Si基板上化合物半導体積層構造の製造方法 |
| US5585648A (en) * | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
| US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
| US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
| JP3182346B2 (ja) * | 1995-08-31 | 2001-07-03 | 株式会社東芝 | 青色発光素子及びその製造方法 |
| US5798537A (en) * | 1995-08-31 | 1998-08-25 | Kabushiki Kaisha Toshiba | Blue light-emitting device |
| JP3409958B2 (ja) * | 1995-12-15 | 2003-05-26 | 株式会社東芝 | 半導体発光素子 |
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| US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
| JPH1022226A (ja) * | 1996-07-05 | 1998-01-23 | Super Silicon Kenkyusho:Kk | エピタキシャルウエハ製造方法及び装置 |
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| JPH11284228A (ja) * | 1998-03-30 | 1999-10-15 | Toyoda Gosei Co Ltd | 半導体素子 |
| JP4126749B2 (ja) * | 1998-04-22 | 2008-07-30 | ソニー株式会社 | 半導体装置の製造方法 |
| JP3525061B2 (ja) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
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| JP2000208822A (ja) * | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | 半導体発光装置 |
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| US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
| WO2001006546A2 (en) * | 1999-07-16 | 2001-01-25 | Massachusetts Institute Of Technology | Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration |
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| US6497763B2 (en) * | 2001-01-19 | 2002-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Electronic device with composite substrate |
| JP4211256B2 (ja) * | 2001-12-28 | 2009-01-21 | セイコーエプソン株式会社 | 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器 |
| US6562127B1 (en) * | 2002-01-16 | 2003-05-13 | The United States Of America As Represented By The Secretary Of The Navy | Method of making mosaic array of thin semiconductor material of large substrates |
-
2000
- 2000-08-31 DE DE10042947A patent/DE10042947A1/de not_active Withdrawn
-
2001
- 2001-08-30 TW TW090121292A patent/TW584971B/zh not_active IP Right Cessation
- 2001-08-31 CN CN018181406A patent/CN1471735B/zh not_active Expired - Lifetime
- 2001-08-31 WO PCT/DE2001/003348 patent/WO2002019439A1/de not_active Ceased
- 2001-08-31 EP EP01967062A patent/EP1314209B1/de not_active Expired - Lifetime
- 2001-08-31 JP JP2002524235A patent/JP4177097B2/ja not_active Expired - Lifetime
-
2003
- 2003-02-28 US US10/377,363 patent/US6849878B2/en not_active Expired - Lifetime
-
2004
- 2004-12-20 US US11/017,615 patent/US7105370B2/en not_active Expired - Lifetime
-
2007
- 2007-03-20 JP JP2007072671A patent/JP5183085B2/ja not_active Expired - Lifetime
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