JPH11233893A5 - - Google Patents

Info

Publication number
JPH11233893A5
JPH11233893A5 JP1998035638A JP3563898A JPH11233893A5 JP H11233893 A5 JPH11233893 A5 JP H11233893A5 JP 1998035638 A JP1998035638 A JP 1998035638A JP 3563898 A JP3563898 A JP 3563898A JP H11233893 A5 JPH11233893 A5 JP H11233893A5
Authority
JP
Japan
Prior art keywords
semiconductor light
region
active layer
growth suppression
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998035638A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11233893A (ja
JP4169821B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP03563898A priority Critical patent/JP4169821B2/ja
Priority claimed from JP03563898A external-priority patent/JP4169821B2/ja
Publication of JPH11233893A publication Critical patent/JPH11233893A/ja
Publication of JPH11233893A5 publication Critical patent/JPH11233893A5/ja
Application granted granted Critical
Publication of JP4169821B2 publication Critical patent/JP4169821B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP03563898A 1998-02-18 1998-02-18 発光ダイオード Expired - Fee Related JP4169821B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03563898A JP4169821B2 (ja) 1998-02-18 1998-02-18 発光ダイオード

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03563898A JP4169821B2 (ja) 1998-02-18 1998-02-18 発光ダイオード

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008177951A Division JP4890509B2 (ja) 2008-07-08 2008-07-08 半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JPH11233893A JPH11233893A (ja) 1999-08-27
JPH11233893A5 true JPH11233893A5 (enExample) 2005-07-21
JP4169821B2 JP4169821B2 (ja) 2008-10-22

Family

ID=12447432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03563898A Expired - Fee Related JP4169821B2 (ja) 1998-02-18 1998-02-18 発光ダイオード

Country Status (1)

Country Link
JP (1) JP4169821B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4523097B2 (ja) * 1999-11-30 2010-08-11 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体レーザダイオード
JP4817522B2 (ja) * 2001-04-06 2011-11-16 三洋電機株式会社 窒化物系半導体層素子および窒化物系半導体の形成方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
WO2003038957A1 (fr) 2001-10-29 2003-05-08 Sharp Kabushiki Kaisha Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur
JP2004014943A (ja) 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
CN101521254B (zh) * 2003-02-07 2011-06-01 三洋电机株式会社 半导体元件及其制造方法
US7372077B2 (en) 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP2007180589A (ja) * 2003-02-07 2007-07-12 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2007251220A (ja) * 2003-02-07 2007-09-27 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP3841092B2 (ja) 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
JP2005191530A (ja) 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
JP2005268581A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JP2005294297A (ja) * 2004-03-31 2005-10-20 Sanyo Electric Co Ltd 半導体素子の製造方法
JP2005322849A (ja) 2004-05-11 2005-11-17 Nec Compound Semiconductor Devices Ltd 半導体レーザおよびその製造方法
KR100616631B1 (ko) 2004-11-15 2006-08-28 삼성전기주식회사 질화물계 반도체 발광 소자 및 그 제조 방법
JP2006156802A (ja) * 2004-11-30 2006-06-15 Showa Denko Kk Ｉｉｉ族窒化物半導体素子
JP4997744B2 (ja) * 2004-12-24 2012-08-08 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP4780376B2 (ja) * 2005-05-31 2011-09-28 ソニー株式会社 半導体発光素子
JP4910492B2 (ja) * 2006-06-15 2012-04-04 豊田合成株式会社 窒化物半導体ウエハの分割方法
KR20090027220A (ko) * 2006-07-05 2009-03-16 파나소닉 주식회사 반도체발광소자 및 제조방법
JP4573863B2 (ja) * 2006-11-30 2010-11-04 三洋電機株式会社 窒化物系半導体素子の製造方法
JP4986680B2 (ja) * 2007-03-29 2012-07-25 三洋電機株式会社 窒化物系半導体レーザ素子の製造方法
JP5075020B2 (ja) * 2008-06-09 2012-11-14 シャープ株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ素子の製造方法
KR101534848B1 (ko) 2008-07-21 2015-07-27 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그발광 소자 제조방법
KR20110123118A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
JP2011049583A (ja) * 2010-10-25 2011-03-10 Sharp Corp 窒化物半導体発光素子
JP5236789B2 (ja) * 2011-10-06 2013-07-17 シャープ株式会社 半導体発光素子の製造方法
JP2013102043A (ja) * 2011-11-08 2013-05-23 Sumitomo Electric Ind Ltd 半導体レーザ素子、及び、半導体レーザ素子の作製方法
KR20240037325A (ko) * 2021-08-27 2024-03-21 교세라 가부시키가이샤 반도체 디바이스의 제조 방법 및 제조 장치

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