JP4169821B2 - 発光ダイオード - Google Patents

発光ダイオード Download PDF

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Publication number
JP4169821B2
JP4169821B2 JP03563898A JP3563898A JP4169821B2 JP 4169821 B2 JP4169821 B2 JP 4169821B2 JP 03563898 A JP03563898 A JP 03563898A JP 3563898 A JP3563898 A JP 3563898A JP 4169821 B2 JP4169821 B2 JP 4169821B2
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JP
Japan
Prior art keywords
region
light emitting
layer
gan
continuous film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03563898A
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English (en)
Japanese (ja)
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JPH11233893A (ja
JPH11233893A5 (enExample
Inventor
元隆 種谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
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Sharp Corp
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Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP03563898A priority Critical patent/JP4169821B2/ja
Publication of JPH11233893A publication Critical patent/JPH11233893A/ja
Publication of JPH11233893A5 publication Critical patent/JPH11233893A5/ja
Application granted granted Critical
Publication of JP4169821B2 publication Critical patent/JP4169821B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Led Devices (AREA)
JP03563898A 1998-02-18 1998-02-18 発光ダイオード Expired - Fee Related JP4169821B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03563898A JP4169821B2 (ja) 1998-02-18 1998-02-18 発光ダイオード

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03563898A JP4169821B2 (ja) 1998-02-18 1998-02-18 発光ダイオード

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008177951A Division JP4890509B2 (ja) 2008-07-08 2008-07-08 半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JPH11233893A JPH11233893A (ja) 1999-08-27
JPH11233893A5 JPH11233893A5 (enExample) 2005-07-21
JP4169821B2 true JP4169821B2 (ja) 2008-10-22

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ID=12447432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03563898A Expired - Fee Related JP4169821B2 (ja) 1998-02-18 1998-02-18 発光ダイオード

Country Status (1)

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JP (1) JP4169821B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4523097B2 (ja) * 1999-11-30 2010-08-11 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体レーザダイオード
JP4817522B2 (ja) * 2001-04-06 2011-11-16 三洋電機株式会社 窒化物系半導体層素子および窒化物系半導体の形成方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
WO2003038957A1 (fr) 2001-10-29 2003-05-08 Sharp Kabushiki Kaisha Dispositif a semi-conducteur au nitrure, son procede de fabrication et appareil optique a semi-conducteur
JP2004014943A (ja) 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
CN101521254B (zh) * 2003-02-07 2011-06-01 三洋电机株式会社 半导体元件及其制造方法
US7372077B2 (en) 2003-02-07 2008-05-13 Sanyo Electric Co., Ltd. Semiconductor device
JP2007180589A (ja) * 2003-02-07 2007-07-12 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2007251220A (ja) * 2003-02-07 2007-09-27 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP3841092B2 (ja) 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
JP2005191530A (ja) 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
JP2005268581A (ja) * 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JP2005294297A (ja) * 2004-03-31 2005-10-20 Sanyo Electric Co Ltd 半導体素子の製造方法
JP2005322849A (ja) 2004-05-11 2005-11-17 Nec Compound Semiconductor Devices Ltd 半導体レーザおよびその製造方法
KR100616631B1 (ko) 2004-11-15 2006-08-28 삼성전기주식회사 질화물계 반도체 발광 소자 및 그 제조 방법
JP2006156802A (ja) * 2004-11-30 2006-06-15 Showa Denko Kk Ｉｉｉ族窒化物半導体素子
JP4997744B2 (ja) * 2004-12-24 2012-08-08 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP4780376B2 (ja) * 2005-05-31 2011-09-28 ソニー株式会社 半導体発光素子
JP4910492B2 (ja) * 2006-06-15 2012-04-04 豊田合成株式会社 窒化物半導体ウエハの分割方法
KR20090027220A (ko) * 2006-07-05 2009-03-16 파나소닉 주식회사 반도체발광소자 및 제조방법
JP4573863B2 (ja) * 2006-11-30 2010-11-04 三洋電機株式会社 窒化物系半導体素子の製造方法
JP4986680B2 (ja) * 2007-03-29 2012-07-25 三洋電機株式会社 窒化物系半導体レーザ素子の製造方法
JP5075020B2 (ja) * 2008-06-09 2012-11-14 シャープ株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ素子の製造方法
KR101534848B1 (ko) 2008-07-21 2015-07-27 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그발광 소자 제조방법
KR20110123118A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
JP2011049583A (ja) * 2010-10-25 2011-03-10 Sharp Corp 窒化物半導体発光素子
JP5236789B2 (ja) * 2011-10-06 2013-07-17 シャープ株式会社 半導体発光素子の製造方法
JP2013102043A (ja) * 2011-11-08 2013-05-23 Sumitomo Electric Ind Ltd 半導体レーザ素子、及び、半導体レーザ素子の作製方法
KR20240037325A (ko) * 2021-08-27 2024-03-21 교세라 가부시키가이샤 반도체 디바이스의 제조 방법 및 제조 장치

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Publication number Publication date
JPH11233893A (ja) 1999-08-27

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