JPH10275806A5 - - Google Patents

Info

Publication number
JPH10275806A5
JPH10275806A5 JP1998067802A JP6780298A JPH10275806A5 JP H10275806 A5 JPH10275806 A5 JP H10275806A5 JP 1998067802 A JP1998067802 A JP 1998067802A JP 6780298 A JP6780298 A JP 6780298A JP H10275806 A5 JPH10275806 A5 JP H10275806A5
Authority
JP
Japan
Prior art keywords
compound semiconductor
spacer layer
gallium arsenide
semiconductor material
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998067802A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10275806A (ja
JP3920447B2 (ja
Filing date
Publication date
Priority claimed from US08/812,952 external-priority patent/US6359294B1/en
Application filed filed Critical
Publication of JPH10275806A publication Critical patent/JPH10275806A/ja
Publication of JPH10275806A5 publication Critical patent/JPH10275806A5/ja
Application granted granted Critical
Publication of JP3920447B2 publication Critical patent/JP3920447B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP06780298A 1997-03-04 1998-03-02 絶縁体一化合物半導体界面構造および製造方法 Expired - Lifetime JP3920447B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US812952 1997-03-04
US08/812,952 US6359294B1 (en) 1997-03-04 1997-03-04 Insulator-compound semiconductor interface structure

Publications (3)

Publication Number Publication Date
JPH10275806A JPH10275806A (ja) 1998-10-13
JPH10275806A5 true JPH10275806A5 (enExample) 2005-03-17
JP3920447B2 JP3920447B2 (ja) 2007-05-30

Family

ID=25211069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06780298A Expired - Lifetime JP3920447B2 (ja) 1997-03-04 1998-03-02 絶縁体一化合物半導体界面構造および製造方法

Country Status (4)

Country Link
US (1) US6359294B1 (enExample)
EP (1) EP0863539B1 (enExample)
JP (1) JP3920447B2 (enExample)
DE (1) DE69827058T2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012029291A1 (ja) 2010-08-31 2012-03-08 住友化学株式会社 半導体基板および絶縁ゲート型電界効果トランジスタ
CN103069553B (zh) 2010-08-31 2015-08-19 住友化学株式会社 半导体基板、绝缘栅极型场效应晶体管以及半导体基板的制造方法
CN106560928B (zh) * 2015-09-28 2019-11-08 河北大学 一种电荷俘获型存储元件及其制备工艺

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5124762A (en) * 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5334865A (en) * 1991-07-31 1994-08-02 Allied-Signal Inc. MODFET structure for threshold control
US5597768A (en) * 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5747838A (en) * 1996-11-27 1998-05-05 The Regents Of The University Of California Ultra-low phase noise GaAs MOSFETs

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