JP2000082671A5 - - Google Patents

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Publication number
JP2000082671A5
JP2000082671A5 JP1998248709A JP24870998A JP2000082671A5 JP 2000082671 A5 JP2000082671 A5 JP 2000082671A5 JP 1998248709 A JP1998248709 A JP 1998248709A JP 24870998 A JP24870998 A JP 24870998A JP 2000082671 A5 JP2000082671 A5 JP 2000082671A5
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JP
Japan
Prior art keywords
nitride
manufacturing
semiconductor device
range
compound semiconductor
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Pending
Application number
JP1998248709A
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English (en)
Japanese (ja)
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JP2000082671A (ja
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Publication date
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Priority to JP10248709A priority Critical patent/JP2000082671A/ja
Priority claimed from JP10248709A external-priority patent/JP2000082671A/ja
Publication of JP2000082671A publication Critical patent/JP2000082671A/ja
Publication of JP2000082671A5 publication Critical patent/JP2000082671A5/ja
Pending legal-status Critical Current

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JP10248709A 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法 Pending JP2000082671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10248709A JP2000082671A (ja) 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-180801 1998-06-26
JP18080198 1998-06-26
JP10248709A JP2000082671A (ja) 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JP2000082671A JP2000082671A (ja) 2000-03-21
JP2000082671A5 true JP2000082671A5 (enExample) 2005-10-13

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ID=26500194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10248709A Pending JP2000082671A (ja) 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JP2000082671A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP4154558B2 (ja) 2000-09-01 2008-09-24 日本電気株式会社 半導体装置
JP4804635B2 (ja) * 2001-03-06 2011-11-02 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP2002289528A (ja) * 2001-03-23 2002-10-04 Yasuhiko Arakawa 窒化ガリウム系化合物半導体の結晶成長法、および窒化ガリウム系化合物半導体を備えた電子デバイス
WO2003063215A1 (en) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device manufacturing method
JP2004327882A (ja) * 2003-04-28 2004-11-18 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
EP1665358B1 (en) 2003-09-09 2020-07-01 The Regents of The University of California Fabrication of single or multiple gate field plates
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP4548117B2 (ja) * 2004-12-28 2010-09-22 ソニー株式会社 半導体発光素子の製造方法、集積型半導体発光装置の製造方法、画像表示装置の製造方法および照明装置の製造方法
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
US7405430B2 (en) * 2005-06-10 2008-07-29 Cree, Inc. Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
KR100809209B1 (ko) * 2006-04-25 2008-02-29 삼성전기주식회사 비극성 ｍ면 질화물 반도체 제조방법
US8283699B2 (en) 2006-11-13 2012-10-09 Cree, Inc. GaN based HEMTs with buried field plates
JP5944301B2 (ja) * 2012-11-19 2016-07-05 株式会社東芝 半導体発光素子の製造方法
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures

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