JP2000133841A5 - - Google Patents

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Publication number
JP2000133841A5
JP2000133841A5 JP1999301368A JP30136899A JP2000133841A5 JP 2000133841 A5 JP2000133841 A5 JP 2000133841A5 JP 1999301368 A JP1999301368 A JP 1999301368A JP 30136899 A JP30136899 A JP 30136899A JP 2000133841 A5 JP2000133841 A5 JP 2000133841A5
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JP
Japan
Prior art keywords
group iii
iii nitride
layer
light emitting
manufacturing
Prior art date
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Granted
Application number
JP1999301368A
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English (en)
Japanese (ja)
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JP2000133841A (ja
JP4865118B2 (ja
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Publication date
Priority claimed from US09/226,114 external-priority patent/US6288417B1/en
Application filed filed Critical
Publication of JP2000133841A publication Critical patent/JP2000133841A/ja
Publication of JP2000133841A5 publication Critical patent/JP2000133841A5/ja
Application granted granted Critical
Publication of JP4865118B2 publication Critical patent/JP4865118B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP30136899A 1998-10-23 1999-10-22 半導体装置および半導体発光デバイスの製造方法 Expired - Fee Related JP4865118B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10541398P 1998-10-23 1998-10-23
US60/105413 1998-10-23
US09/226114 1999-01-07
US09/226,114 US6288417B1 (en) 1999-01-07 1999-01-07 Light-emitting devices including polycrystalline gan layers and method of forming devices

Publications (3)

Publication Number Publication Date
JP2000133841A JP2000133841A (ja) 2000-05-12
JP2000133841A5 true JP2000133841A5 (enExample) 2006-11-30
JP4865118B2 JP4865118B2 (ja) 2012-02-01

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ID=26802553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30136899A Expired - Fee Related JP4865118B2 (ja) 1998-10-23 1999-10-22 半導体装置および半導体発光デバイスの製造方法

Country Status (2)

Country Link
EP (1) EP0996173B1 (enExample)
JP (1) JP4865118B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001033643A1 (en) 1999-10-29 2001-05-10 Ohio University BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS
GB2362263A (en) * 2000-05-12 2001-11-14 Juses Chao Amorphous and polycrystalline growth of gallium nitride-based semiconductors
AU2001266602A1 (en) 2000-05-23 2001-12-03 Ohio University Amorphous aluminum nitride emitter
US6410940B1 (en) * 2000-06-15 2002-06-25 Kansas State University Research Foundation Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications
GB2378039B (en) * 2001-07-27 2003-09-17 Juses Chao AlInGaN LED Device
KR100576857B1 (ko) 2003-12-24 2006-05-10 삼성전기주식회사 ＧａＮ 반도체 발광소자 및 그 제조방법
FR2875333B1 (fr) * 2004-09-16 2006-12-15 Centre Nat Rech Scient Cnrse Realisation d'une couche de nitrure d'indium
JP5115925B2 (ja) * 2007-10-26 2013-01-09 国立大学法人 千葉大学 結晶軸配向性とファセット（結晶面）を制御した微結晶構造窒化物半導体光・電子素子
JP5240881B2 (ja) * 2012-07-06 2013-07-17 国立大学法人 千葉大学 結晶軸配向性とファセット（結晶面）を制御した微結晶構造窒化物半導体光・電子素子
US20180072570A1 (en) * 2015-03-30 2018-03-15 Tosoh Corporation Gallium nitride-based sintered compact and method for manufacturing same
JP7212173B2 (ja) 2019-10-09 2023-01-24 パナソニックＩｐマネジメント株式会社 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
EP4104201A1 (en) 2020-02-11 2022-12-21 SLT Technologies, Inc. Improved group iii nitride substrate, method of making, and method of use
US12091771B2 (en) * 2020-02-11 2024-09-17 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
JP7727762B2 (ja) * 2022-01-28 2025-08-21 株式会社ジャパンディスプレイ 発光装置
CN115050864B (zh) * 2022-08-16 2022-11-25 北京大学 一种基于非单晶衬底的单晶氮化物Micro-LED阵列的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE159302T1 (de) * 1990-11-07 1997-11-15 Canon Kk Iii-v verbindungs-halbleiter-vorrichtung, drucker- und anzeigevorrichtung unter verwendung derselben, und verfahren zur herstellung dieser vorrichtung
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
JP3325380B2 (ja) * 1994-03-09 2002-09-17 株式会社東芝 半導体発光素子およびその製造方法
JPH10500535A (ja) * 1994-10-11 1998-01-13 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 複数の波長で光を発生するための発光ダイオードのモノリシック・アレイ及びそれをマルチカラー・デイスプレイに応用するための使用方法
JPH08222812A (ja) * 1995-02-17 1996-08-30 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体の結晶成長方法
US5986285A (en) * 1996-11-07 1999-11-16 Fuji Xerox, Co., Ltd. Group III-V amorphous and microcrystalline optical semiconductor including hydrogen, and method of forming thereof
JP3695049B2 (ja) * 1997-03-06 2005-09-14 富士ゼロックス株式会社 微結晶化合物光半導体の製造方法
SG63757A1 (en) * 1997-03-12 1999-03-30 Hewlett Packard Co Adding impurities to improve the efficiency of allngan quantum well led's
JPH10321956A (ja) * 1997-05-15 1998-12-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
EP0975027A2 (en) * 1998-07-23 2000-01-26 Sony Corporation Light emitting device and process for producing the same

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