JP2000357820A5 - - Google Patents

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Publication number
JP2000357820A5
JP2000357820A5 JP1999167986A JP16798699A JP2000357820A5 JP 2000357820 A5 JP2000357820 A5 JP 2000357820A5 JP 1999167986 A JP1999167986 A JP 1999167986A JP 16798699 A JP16798699 A JP 16798699A JP 2000357820 A5 JP2000357820 A5 JP 2000357820A5
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JP1999167986A
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Japanese (ja)
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JP2000357820A (ja
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Priority to JP16798699A priority Critical patent/JP2000357820A/ja
Priority claimed from JP16798699A external-priority patent/JP2000357820A/ja
Priority to US09/593,144 priority patent/US6365921B1/en
Publication of JP2000357820A publication Critical patent/JP2000357820A/ja
Publication of JP2000357820A5 publication Critical patent/JP2000357820A5/ja
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JP16798699A 1999-06-15 1999-06-15 窒化ガリウム系半導体発光素子及びその製造方法 Pending JP2000357820A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP16798699A JP2000357820A (ja) 1999-06-15 1999-06-15 窒化ガリウム系半導体発光素子及びその製造方法
US09/593,144 US6365921B1 (en) 1999-06-15 2000-06-14 Gallium-nitride-based semiconductor light emitting device and fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16798699A JP2000357820A (ja) 1999-06-15 1999-06-15 窒化ガリウム系半導体発光素子及びその製造方法

Publications (2)

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JP2000357820A JP2000357820A (ja) 2000-12-26
JP2000357820A5 true JP2000357820A5 (enExample) 2005-04-07

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JP16798699A Pending JP2000357820A (ja) 1999-06-15 1999-06-15 窒化ガリウム系半導体発光素子及びその製造方法

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US (1) US6365921B1 (enExample)
JP (1) JP2000357820A (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) * 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
US6475882B1 (en) 1999-12-20 2002-11-05 Nitride Semiconductors Co., Ltd. Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
JP2001185493A (ja) * 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4432180B2 (ja) * 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
CN1213462C (zh) * 2000-03-14 2005-08-03 丰田合成株式会社 用于制造ⅲ族氮化物系化合物半导体的方法以及ⅲ族氮化物系化合物半导体器件
JP2001267242A (ja) * 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) * 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
JP3285341B2 (ja) 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
US7619261B2 (en) * 2000-08-07 2009-11-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP3466144B2 (ja) 2000-09-22 2003-11-10 士郎 酒井 半導体の表面を荒くする方法
JP2002151796A (ja) * 2000-11-13 2002-05-24 Sharp Corp 窒化物半導体発光素子とこれを含む装置
EP1367150B1 (en) * 2001-02-14 2009-08-19 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) * 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP3520919B2 (ja) 2001-03-27 2004-04-19 士郎 酒井 窒化物系半導体装置の製造方法
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
WO2002099859A1 (en) 2001-06-04 2002-12-12 Toyoda Gosei Co., Ltd. Method of producing iii nitride compound semiconductor
WO2002103812A1 (en) * 2001-06-13 2002-12-27 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor, production method therefor and nitride semiconductor element
JP3515974B2 (ja) 2001-06-13 2004-04-05 松下電器産業株式会社 窒化物半導体、その製造方法及び窒化物半導体素子
JP3548735B2 (ja) 2001-06-29 2004-07-28 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP3690326B2 (ja) * 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
US7005685B2 (en) 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
US20040187092A1 (en) * 2003-03-20 2004-09-23 Toshiba Tec Kabushiki Kaisha Apparatus and method for performing the management of devices
KR100744933B1 (ko) * 2003-10-13 2007-08-01 삼성전기주식회사 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
JP2005251922A (ja) * 2004-03-03 2005-09-15 Nagoya Kogyo Univ 半導体発光素子
WO2005106981A1 (en) * 2004-04-28 2005-11-10 Showa Denko K.K. Group iii nitride semiconductor light-emitting device
US7759149B2 (en) * 2004-06-09 2010-07-20 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4962829B2 (ja) * 2004-08-30 2012-06-27 信越半導体株式会社 エピタキシャルウェーハの製造方法
KR100580751B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US7646027B2 (en) 2005-05-06 2010-01-12 Showa Denko K.K. Group III nitride semiconductor stacked structure
JP6005346B2 (ja) * 2011-08-12 2016-10-12 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP2013051440A (ja) * 2012-11-26 2013-03-14 Toshiba Corp 半導体素子の製造方法及び半導体基板の製造方法
JP6499481B2 (ja) * 2015-03-17 2019-04-10 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
KR102680861B1 (ko) * 2016-12-15 2024-07-03 삼성전자주식회사 질화 갈륨 기판의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
JPH1051073A (ja) * 1996-08-02 1998-02-20 Fujitsu Ltd 半導体発光装置
JP3090057B2 (ja) * 1996-08-07 2000-09-18 昭和電工株式会社 短波長発光素子
US5927995A (en) * 1997-04-09 1999-07-27 Hewlett-Packard Company Reduction of threading dislocations by amorphization and recrystallization
JP3462720B2 (ja) * 1997-07-16 2003-11-05 三洋電機株式会社 ｎ型窒化物半導体の電極及び前記電極を有する半導体素子並びにその製造方法
JP4225594B2 (ja) * 1997-08-04 2009-02-18 三洋電機株式会社 窒化ガリウム系化合物半導体装置
JP3517867B2 (ja) * 1997-10-10 2004-04-12 豊田合成株式会社 ＧａＮ系の半導体素子

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