JP2000357820A5 - - Google Patents
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- JP2000357820A5 JP2000357820A5 JP1999167986A JP16798699A JP2000357820A5 JP 2000357820 A5 JP2000357820 A5 JP 2000357820A5 JP 1999167986 A JP1999167986 A JP 1999167986A JP 16798699 A JP16798699 A JP 16798699A JP 2000357820 A5 JP2000357820 A5 JP 2000357820A5
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- 229910002601 GaN Inorganic materials 0.000 description 12
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Description
図６に示すように、貫通転位の密度は、ＧａＮ下地層３の厚さが平均０．３μｍまでは急激に減少し、平均０．３μｍを越えると、その減少率は緩やかになる。ここで、ＧａＮ下地層３の厚さを平均０．３μｍとしたときの転位密度は、２×１０ ９ （１／ｃｍ ２ ）であるが、ＧａＮ下地層３を有さない窒化物半導体発光素子であって、転位密度を９×１０９（１／ｃｍ ２ ）有する素子と発光効率を比較すると、約５倍向上することが確認された。
図７に示すように、ピットの密度は、ＧａＮ下地層３の厚さが平均０．３μｍの場合において最も低くなる。図示しないが、ＧａＮ下地層３の厚さが２．０μｍを越えると、１つのピットの大きさも大きくなるので好ましくない。図８に示すように、Ｓｉ−ＧａＮ層４をＧａＮ下地層３上に成膜した後に、Ｓｉ−ＧａＮ層４上に残るピット４ａの密度は、Ｓｉ−ＧａＮ層４中のＳｉ濃度が５×１０１６から５×１０１７（１／ｃｍ３）の範囲において最も低くなる。すなわち、形成されたピット３ａがＳｉ−ＧａＮ層４によって平坦化されるのである。ここで、ＧａＮ下地層３の厚さを平均０．３μｍとして、Ｓｉ−ＧａＮ層４中のＳｉ濃度を２×１０１７ （１／ｃｍ ３ ）から変化させたときの貫通転位密度は１〜２×１０９（１／ｃｍ ２ ）であってほぼ一定であった。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16798699A JP2000357820A (ja) | 1999-06-15 | 1999-06-15 | 窒化ガリウム系半導体発光素子及びその製造方法 |
| US09/593,144 US6365921B1 (en) | 1999-06-15 | 2000-06-14 | Gallium-nitride-based semiconductor light emitting device and fabrication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16798699A JP2000357820A (ja) | 1999-06-15 | 1999-06-15 | 窒化ガリウム系半導体発光素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000357820A JP2000357820A (ja) | 2000-12-26 |
| JP2000357820A5 true JP2000357820A5 (ja) | 2005-04-07 |
Family
ID=15859694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16798699A Pending JP2000357820A (ja) | 1999-06-15 | 1999-06-15 | 窒化ガリウム系半導体発光素子及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6365921B1 (ja) |
| JP (1) | JP2000357820A (ja) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3587081B2 (ja) | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子 |
| JP3555500B2 (ja) * | 1999-05-21 | 2004-08-18 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体及びその製造方法 |
| US6580098B1 (en) | 1999-07-27 | 2003-06-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| US6475882B1 (en) | 1999-12-20 | 2002-11-05 | Nitride Semiconductors Co., Ltd. | Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device |
| JP4432180B2 (ja) * | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体 |
| JP2001185493A (ja) * | 1999-12-24 | 2001-07-06 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子 |
| JP2001267242A (ja) * | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体及びその製造方法 |
| KR20020084194A (ko) * | 2000-03-14 | 2002-11-04 | 도요다 고세이 가부시키가이샤 | Ｉｉｉ족 질화물계 화합물 반도체의 제조방법 및 ｉｉｉ족질화물계 화합물 반도체 소자 |
| TW518767B (en) * | 2000-03-31 | 2003-01-21 | Toyoda Gosei Kk | Production method of III nitride compound semiconductor and III nitride compound semiconductor element |
| JP2001313259A (ja) * | 2000-04-28 | 2001-11-09 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子 |
| JP3285341B2 (ja) | 2000-06-01 | 2002-05-27 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
| US7619261B2 (en) * | 2000-08-07 | 2009-11-17 | Toyoda Gosei Co., Ltd. | Method for manufacturing gallium nitride compound semiconductor |
| JP3466144B2 (ja) | 2000-09-22 | 2003-11-10 | 士郎 酒井 | 半導体の表面を荒くする方法 |
| JP2002151796A (ja) * | 2000-11-13 | 2002-05-24 | Sharp Corp | 窒化物半導体発光素子とこれを含む装置 |
| US7052979B2 (en) * | 2001-02-14 | 2006-05-30 | Toyoda Gosei Co., Ltd. | Production method for semiconductor crystal and semiconductor luminous element |
| JP2002280314A (ja) * | 2001-03-22 | 2002-09-27 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子 |
| JP3520919B2 (ja) | 2001-03-27 | 2004-04-19 | 士郎 酒井 | 窒化物系半導体装置の製造方法 |
| JP2002314203A (ja) * | 2001-04-12 | 2002-10-25 | Pioneer Electronic Corp | ３族窒化物半導体レーザ及びその製造方法 |
| EP1403912A4 (en) * | 2001-06-04 | 2009-08-26 | Toyoda Gosei Kk | PROCESS FOR PRODUCING A NITRIDE III SEMICONDUCTOR |
| JP3515974B2 (ja) | 2001-06-13 | 2004-04-05 | 松下電器産業株式会社 | 窒化物半導体、その製造方法及び窒化物半導体素子 |
| WO2002103812A1 (en) * | 2001-06-13 | 2002-12-27 | Matsushita Electric Industrial Co., Ltd. | Nitride semiconductor, production method therefor and nitride semiconductor element |
| JP3548735B2 (ja) | 2001-06-29 | 2004-07-28 | 士郎 酒井 | 窒化ガリウム系化合物半導体の製造方法 |
| JP3690326B2 (ja) * | 2001-10-12 | 2005-08-31 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| US7005685B2 (en) | 2002-02-28 | 2006-02-28 | Shiro Sakai | Gallium-nitride-based compound semiconductor device |
| US20040187092A1 (en) * | 2003-03-20 | 2004-09-23 | Toshiba Tec Kabushiki Kaisha | Apparatus and method for performing the management of devices |
| KR100744933B1 (ko) * | 2003-10-13 | 2007-08-01 | 삼성전기주식회사 | 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법 |
| US7323256B2 (en) | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
| JP2005251922A (ja) * | 2004-03-03 | 2005-09-15 | Nagoya Kogyo Univ | 半導体発光素子 |
| WO2005106981A1 (en) * | 2004-04-28 | 2005-11-10 | Showa Denko K.K. | Group iii nitride semiconductor light-emitting device |
| WO2005122289A1 (en) * | 2004-06-09 | 2005-12-22 | Showa Denko K.K. | Gallium nitride-based semiconductor stacked structure |
| US7534633B2 (en) * | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| JP4962829B2 (ja) * | 2004-08-30 | 2012-06-27 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| KR100580751B1 (ko) | 2004-12-23 | 2006-05-15 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| US7646027B2 (en) | 2005-05-06 | 2010-01-12 | Showa Denko K.K. | Group III nitride semiconductor stacked structure |
| JP6005346B2 (ja) * | 2011-08-12 | 2016-10-12 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
| JP2013051440A (ja) * | 2012-11-26 | 2013-03-14 | Toshiba Corp | 半導体素子の製造方法及び半導体基板の製造方法 |
| JP6499481B2 (ja) * | 2015-03-17 | 2019-04-10 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板の製造方法 |
| US10600645B2 (en) * | 2016-12-15 | 2020-03-24 | Samsung Electronics Co., Ltd. | Manufacturing method of gallium nitride substrate |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6072197A (en) * | 1996-02-23 | 2000-06-06 | Fujitsu Limited | Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy |
| JPH1051073A (ja) * | 1996-08-02 | 1998-02-20 | Fujitsu Ltd | 半導体発光装置 |
| JP3090057B2 (ja) * | 1996-08-07 | 2000-09-18 | 昭和電工株式会社 | 短波長発光素子 |
| US5927995A (en) * | 1997-04-09 | 1999-07-27 | Hewlett-Packard Company | Reduction of threading dislocations by amorphization and recrystallization |
| JP3462720B2 (ja) * | 1997-07-16 | 2003-11-05 | 三洋電機株式会社 | ｎ型窒化物半導体の電極及び前記電極を有する半導体素子並びにその製造方法 |
| JP4225594B2 (ja) * | 1997-08-04 | 2009-02-18 | 三洋電機株式会社 | 窒化ガリウム系化合物半導体装置 |
| JP3517867B2 (ja) * | 1997-10-10 | 2004-04-12 | 豊田合成株式会社 | ＧａＮ系の半導体素子 |
-
1999
- 1999-06-15 JP JP16798699A patent/JP2000357820A/ja active Pending
-
2000
- 2000-06-14 US US09/593,144 patent/US6365921B1/en not_active Expired - Lifetime
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