JP2003092450A5 - - Google Patents

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Publication number
JP2003092450A5
JP2003092450A5 JP2001284369A JP2001284369A JP2003092450A5 JP 2003092450 A5 JP2003092450 A5 JP 2003092450A5 JP 2001284369 A JP2001284369 A JP 2001284369A JP 2001284369 A JP2001284369 A JP 2001284369A JP 2003092450 A5 JP2003092450 A5 JP 2003092450A5
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JP
Japan
Prior art keywords
semiconductor light
light emitting
emitting element
element chip
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001284369A
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English (en)
Japanese (ja)
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JP2003092450A (ja
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Publication date
Application filed filed Critical
Priority to JP2001284369A priority Critical patent/JP2003092450A/ja
Priority claimed from JP2001284369A external-priority patent/JP2003092450A/ja
Publication of JP2003092450A publication Critical patent/JP2003092450A/ja
Publication of JP2003092450A5 publication Critical patent/JP2003092450A5/ja
Pending legal-status Critical Current

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JP2001284369A 2001-09-19 2001-09-19 半導体発光装置 Pending JP2003092450A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001284369A JP2003092450A (ja) 2001-09-19 2001-09-19 半導体発光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001284369A JP2003092450A (ja) 2001-09-19 2001-09-19 半導体発光装置

Publications (2)

Publication Number Publication Date
JP2003092450A JP2003092450A (ja) 2003-03-28
JP2003092450A5 true JP2003092450A5 (enExample) 2005-06-23

Family

ID=19107702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001284369A Pending JP2003092450A (ja) 2001-09-19 2001-09-19 半導体発光装置

Country Status (1)

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JP (1) JP2003092450A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4536429B2 (ja) * 2004-06-04 2010-09-01 浜松ホトニクス株式会社 半導体レーザ装置及びその製造方法
DE102006033502A1 (de) 2006-05-03 2007-11-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen
US20100085996A1 (en) * 2006-10-17 2010-04-08 Sanyo Electric Co., Ltd. Nitride semiconductor laser device and its manufacturing method
JP4840345B2 (ja) * 2007-12-03 2011-12-21 住友電気工業株式会社 エピタキシャルウエハ、エピタキシャルウエハを作製する方法
JP5556749B2 (ja) * 2011-06-23 2014-07-23 住友電気工業株式会社 レーザダイオード組立体
JP5321666B2 (ja) * 2011-10-06 2013-10-23 住友電気工業株式会社 エピタキシャルウエハ、エピタキシャルウエハを作製する方法
JP5962522B2 (ja) * 2012-03-22 2016-08-03 日亜化学工業株式会社 半導体レーザ装置
DE102013223115A1 (de) * 2013-11-13 2015-05-28 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung
JP6361293B2 (ja) * 2014-05-30 2018-07-25 日亜化学工業株式会社 半導体レーザ装置
WO2024162074A1 (ja) * 2023-01-30 2024-08-08 ヌヴォトンテクノロジージャパン株式会社 半導体レーザデバイス、半導体レーザ素子用サブマウント、半導体レーザ素子用集合サブマウント、発光デバイスの製造方法、及び発光素子用サブマウントの製造方法

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