JP2003101113A5 - - Google Patents

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Publication number
JP2003101113A5
JP2003101113A5 JP2001295939A JP2001295939A JP2003101113A5 JP 2003101113 A5 JP2003101113 A5 JP 2003101113A5 JP 2001295939 A JP2001295939 A JP 2001295939A JP 2001295939 A JP2001295939 A JP 2001295939A JP 2003101113 A5 JP2003101113 A5 JP 2003101113A5
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JP
Japan
Prior art keywords
nitride semiconductor
semiconductor laser
laser device
support base
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001295939A
Other languages
English (en)
Japanese (ja)
Other versions
JP4514376B2 (ja
JP2003101113A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001295939A priority Critical patent/JP4514376B2/ja
Priority claimed from JP2001295939A external-priority patent/JP4514376B2/ja
Priority to US10/255,062 priority patent/US6895029B2/en
Publication of JP2003101113A publication Critical patent/JP2003101113A/ja
Publication of JP2003101113A5 publication Critical patent/JP2003101113A5/ja
Application granted granted Critical
Publication of JP4514376B2 publication Critical patent/JP4514376B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001295939A 2001-09-27 2001-09-27 窒化物半導体レーザ装置 Expired - Fee Related JP4514376B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001295939A JP4514376B2 (ja) 2001-09-27 2001-09-27 窒化物半導体レーザ装置
US10/255,062 US6895029B2 (en) 2001-09-27 2002-09-26 Nitride semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001295939A JP4514376B2 (ja) 2001-09-27 2001-09-27 窒化物半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2003101113A JP2003101113A (ja) 2003-04-04
JP2003101113A5 true JP2003101113A5 (enExample) 2005-10-13
JP4514376B2 JP4514376B2 (ja) 2010-07-28

Family

ID=19117286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001295939A Expired - Fee Related JP4514376B2 (ja) 2001-09-27 2001-09-27 窒化物半導体レーザ装置

Country Status (2)

Country Link
US (1) US6895029B2 (enExample)
JP (1) JP4514376B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179508A (ja) * 2003-03-06 2006-07-06 Matsushita Electric Ind Co Ltd 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子の劣化防止方法
US7247514B2 (en) * 2003-04-11 2007-07-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same
JP4072093B2 (ja) * 2003-05-20 2008-04-02 株式会社日立製作所 半導体レーザモジュール
KR100542720B1 (ko) * 2003-06-03 2006-01-11 삼성전기주식회사 GaN계 접합 구조
JP2005026291A (ja) * 2003-06-30 2005-01-27 Sharp Corp 窒化物系半導体発光装置およびその製造方法
JP4825403B2 (ja) * 2004-04-01 2011-11-30 株式会社日立製作所 サブマウントおよびその製造方法
US7790484B2 (en) * 2005-06-08 2010-09-07 Sharp Kabushiki Kaisha Method for manufacturing laser devices
US8044430B2 (en) 2006-01-18 2011-10-25 Panasonic Corporation Nitride semiconductor light-emitting device comprising multiple semiconductor layers having substantially uniform N-type dopant concentration
JP2009076730A (ja) * 2007-09-21 2009-04-09 Sharp Corp 窒化物半導体レーザ装置
JP5079474B2 (ja) * 2007-11-29 2012-11-21 シャープ株式会社 キャップ部材およびそれを用いた半導体装置
JP2009164233A (ja) 2007-12-28 2009-07-23 Rohm Co Ltd 窒化物半導体レーザ素子およびその製造方法
DE102008009110A1 (de) * 2008-02-14 2009-08-20 Osram Opto Semiconductors Gmbh Halbleiterlasermodul
JP2011119630A (ja) * 2009-10-30 2011-06-16 Sony Corp 光装置
US8648328B2 (en) * 2011-12-27 2014-02-11 Sharp Laboratories Of America, Inc. Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
DE102012102305B4 (de) * 2012-03-19 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012102306B4 (de) * 2012-03-19 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
US9008138B2 (en) 2012-04-12 2015-04-14 Osram Opto Semiconductors Gmbh Laser diode device
DE102017104276B4 (de) * 2017-03-01 2020-01-16 Osram Opto Semiconductors Gmbh Verfahren zum Befestigen eines Halbleiterchips auf einem Leiterrahmen und elektronisches Bauelement

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2726141B2 (ja) * 1990-06-05 1998-03-11 三菱電機株式会社 半導体装置およびその製造方法
JPH06314857A (ja) * 1993-03-04 1994-11-08 Mitsubishi Electric Corp 半導体発光装置
JP3271475B2 (ja) * 1994-08-01 2002-04-02 株式会社デンソー 電気素子の接合材料および接合方法
US5783818A (en) * 1995-05-08 1998-07-21 Matsushita Electric Industrial Co., Ltd. Integrated type optical pickup having packaging with gas-tight seal
JP3360812B2 (ja) 1998-05-26 2003-01-07 日亜化学工業株式会社 窒化物半導体素子
JP2000124540A (ja) * 1998-10-16 2000-04-28 Fuji Photo Film Co Ltd 半導体発光素子
US6410904B1 (en) * 1999-11-22 2002-06-25 Brother Kogyo Kabushiki Kaisha Multi-beam emitting device
JP2001168442A (ja) * 1999-12-07 2001-06-22 Sony Corp 半導体レーザ素子の製造方法、配設基板および支持基板
JP2002084027A (ja) * 2000-09-07 2002-03-22 Sony Corp 半導体発光装置
JP3889933B2 (ja) * 2001-03-02 2007-03-07 シャープ株式会社 半導体発光装置

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