JP2002261376A5 - - Google Patents
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- Publication number
- JP2002261376A5 JP2002261376A5 JP2001058147A JP2001058147A JP2002261376A5 JP 2002261376 A5 JP2002261376 A5 JP 2002261376A5 JP 2001058147 A JP2001058147 A JP 2001058147A JP 2001058147 A JP2001058147 A JP 2001058147A JP 2002261376 A5 JP2002261376 A5 JP 2002261376A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- mounting surface
- emitting device
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- -1 nitride compound Chemical class 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 230000008602 contraction Effects 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001058147A JP3889933B2 (ja) | 2001-03-02 | 2001-03-02 | 半導体発光装置 |
| US10/087,872 US6954034B2 (en) | 2001-03-02 | 2002-03-01 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001058147A JP3889933B2 (ja) | 2001-03-02 | 2001-03-02 | 半導体発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002261376A JP2002261376A (ja) | 2002-09-13 |
| JP2002261376A5 true JP2002261376A5 (enExample) | 2004-12-16 |
| JP3889933B2 JP3889933B2 (ja) | 2007-03-07 |
Family
ID=18917916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001058147A Expired - Lifetime JP3889933B2 (ja) | 2001-03-02 | 2001-03-02 | 半導体発光装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6954034B2 (enExample) |
| JP (1) | JP3889933B2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4131623B2 (ja) * | 2001-09-12 | 2008-08-13 | 三洋電機株式会社 | 電極構造およびその製造方法 |
| JP4514376B2 (ja) * | 2001-09-27 | 2010-07-28 | シャープ株式会社 | 窒化物半導体レーザ装置 |
| US6967982B2 (en) * | 2001-12-25 | 2005-11-22 | The Furukawa Electric Co., Ltd. | Semiconductor laser device with a strain reduction cushion function, semiconductor laser module, and semiconductor laser device fabrication method |
| JP2003264334A (ja) * | 2002-03-08 | 2003-09-19 | Hitachi Ltd | 半導体レーザ素子及び半導体レーザモジュール |
| US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
| US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| EP1389812A1 (en) * | 2002-08-13 | 2004-02-18 | Agilent Technologies Inc | A mounting arrangement for high frequency electro-optical components |
| JP2006179508A (ja) * | 2003-03-06 | 2006-07-06 | Matsushita Electric Ind Co Ltd | 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子の劣化防止方法 |
| KR100964399B1 (ko) * | 2003-03-08 | 2010-06-17 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체 |
| CN101661910B (zh) * | 2003-10-27 | 2012-07-18 | 住友电气工业株式会社 | 氮化镓半导体衬底和蓝色发光器件 |
| WO2006031254A2 (en) * | 2004-03-26 | 2006-03-23 | Bae Systems Information And Electronic Systems Integration, Inc. | Compact high output power mid-infrared emitter system and method |
| US8133320B2 (en) * | 2004-08-24 | 2012-03-13 | Apollo Diamond, Inc. | Diamond heat sink in a laser |
| JP4476105B2 (ja) * | 2004-11-22 | 2010-06-09 | 三菱電機株式会社 | 窒化物半導体装置およびその製造方法 |
| US7790484B2 (en) * | 2005-06-08 | 2010-09-07 | Sharp Kabushiki Kaisha | Method for manufacturing laser devices |
| US7359416B2 (en) * | 2006-03-15 | 2008-04-15 | Matsushita Electric Industrial Co., Ltd. | Optical semiconductor device |
| JP4974563B2 (ja) * | 2006-03-30 | 2012-07-11 | パナソニック株式会社 | 光半導体装置 |
| JP2007250739A (ja) * | 2006-03-15 | 2007-09-27 | Matsushita Electric Ind Co Ltd | 光半導体装置 |
| JP2007299979A (ja) * | 2006-05-01 | 2007-11-15 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶の表面処理方法およびｉｉｉ族窒化物結晶基板 |
| JP5479667B2 (ja) * | 2006-10-19 | 2014-04-23 | 古河電気工業株式会社 | 半導体パワーモジュール |
| JP4565350B2 (ja) * | 2007-03-22 | 2010-10-20 | ソニー株式会社 | 半導体レーザ装置 |
| DE112007003508T5 (de) * | 2007-05-18 | 2010-04-15 | Mitsubishi Electric Corp. | Optische Halbleitervorrichtung |
| KR100850780B1 (ko) * | 2007-05-22 | 2008-08-06 | 삼성전기주식회사 | 질화물계 반도체 발광소자의 제조방법 |
| KR20090022700A (ko) * | 2007-08-31 | 2009-03-04 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| JP2009129943A (ja) * | 2007-11-20 | 2009-06-11 | Mitsubishi Electric Corp | 窒化物半導体装置とその製造方法 |
| JP2012119637A (ja) * | 2010-12-03 | 2012-06-21 | Sumitomo Electric Device Innovations Inc | 光半導体装置の製造方法 |
| JP5796181B2 (ja) | 2012-05-22 | 2015-10-21 | パナソニックＩｐマネジメント株式会社 | 窒化物半導体発光装置 |
| WO2014141691A1 (ja) * | 2013-03-15 | 2014-09-18 | パナソニック株式会社 | 発光モジュール |
| JP6542514B2 (ja) * | 2014-08-08 | 2019-07-10 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザ装置 |
| WO2018203466A1 (ja) * | 2017-05-01 | 2018-11-08 | パナソニックＩｐマネジメント株式会社 | 窒化物系発光装置 |
| CN111386637B (zh) * | 2017-11-24 | 2023-07-28 | 京瓷株式会社 | 发光元件搭载用基板和阵列基板、以及发光装置 |
| US11267080B2 (en) | 2019-05-09 | 2022-03-08 | Indium Corporation | Low temperature melting and mid temperature melting lead-free solder paste with mixed solder alloy powders |
| EP3965147A1 (en) * | 2020-09-03 | 2022-03-09 | Schott Ag | Header for an electronic or opto-electronic component and process for manufacturing of such |
| EP3965146B1 (en) | 2020-09-03 | 2025-04-09 | Schott Ag | Header for an electronic component |
| EP3965145B1 (en) | 2020-09-03 | 2025-04-16 | Schott Ag | Transistor header for high-speed optoelectronic package |
| WO2022200183A1 (en) * | 2021-03-24 | 2022-09-29 | Element Six Technologies Limited | Laser diode assembly and a method of assembling such a laser diode assembly |
| JPWO2022264972A1 (enExample) * | 2021-06-15 | 2022-12-22 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0644320A (ja) * | 1991-05-14 | 1994-02-18 | Sony Corp | 情報検索システム |
| JP2768852B2 (ja) | 1991-08-27 | 1998-06-25 | 三菱電機株式会社 | 半導体光デバイス及びその組立方法 |
| US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
| US5838029A (en) * | 1994-08-22 | 1998-11-17 | Rohm Co., Ltd. | GaN-type light emitting device formed on a silicon substrate |
| US5787104A (en) * | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
| JP3409958B2 (ja) * | 1995-12-15 | 2003-05-26 | 株式会社東芝 | 半導体発光素子 |
| JP4121591B2 (ja) | 1997-11-07 | 2008-07-23 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
| JP3822976B2 (ja) * | 1998-03-06 | 2006-09-20 | ソニー株式会社 | 半導体装置およびその製造方法 |
| JP3348024B2 (ja) | 1998-08-17 | 2002-11-20 | 松下電器産業株式会社 | 半導体レーザ装置 |
| TW449937B (en) * | 1999-02-26 | 2001-08-11 | Matsushita Electronics Corp | Semiconductor device and the manufacturing method thereof |
| JP3567790B2 (ja) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US20010038140A1 (en) * | 2000-04-06 | 2001-11-08 | Karker Jeffrey A. | High rigidity, multi-layered semiconductor package and method of making the same |
| US6469320B2 (en) * | 2000-05-25 | 2002-10-22 | Rohm, Co., Ltd. | Semiconductor light emitting device |
| US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
-
2001
- 2001-03-02 JP JP2001058147A patent/JP3889933B2/ja not_active Expired - Lifetime
-
2002
- 2002-03-01 US US10/087,872 patent/US6954034B2/en not_active Expired - Lifetime
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