JP3889933B2 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
JP3889933B2
JP3889933B2 JP2001058147A JP2001058147A JP3889933B2 JP 3889933 B2 JP3889933 B2 JP 3889933B2 JP 2001058147 A JP2001058147 A JP 2001058147A JP 2001058147 A JP2001058147 A JP 2001058147A JP 3889933 B2 JP3889933 B2 JP 3889933B2
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JP
Japan
Prior art keywords
semiconductor laser
solder
submount
laser chip
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001058147A
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English (en)
Japanese (ja)
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JP2002261376A5 (enExample
JP2002261376A (ja
Inventor
由紀子 森下
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Sharp Corp
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Sharp Corp
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Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2001058147A priority Critical patent/JP3889933B2/ja
Priority to US10/087,872 priority patent/US6954034B2/en
Publication of JP2002261376A publication Critical patent/JP2002261376A/ja
Publication of JP2002261376A5 publication Critical patent/JP2002261376A5/ja
Application granted granted Critical
Publication of JP3889933B2 publication Critical patent/JP3889933B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Die Bonding (AREA)
JP2001058147A 2001-03-02 2001-03-02 半導体発光装置 Expired - Lifetime JP3889933B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001058147A JP3889933B2 (ja) 2001-03-02 2001-03-02 半導体発光装置
US10/087,872 US6954034B2 (en) 2001-03-02 2002-03-01 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001058147A JP3889933B2 (ja) 2001-03-02 2001-03-02 半導体発光装置

Publications (3)

Publication Number Publication Date
JP2002261376A JP2002261376A (ja) 2002-09-13
JP2002261376A5 JP2002261376A5 (enExample) 2004-12-16
JP3889933B2 true JP3889933B2 (ja) 2007-03-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001058147A Expired - Lifetime JP3889933B2 (ja) 2001-03-02 2001-03-02 半導体発光装置

Country Status (2)

Country Link
US (1) US6954034B2 (enExample)
JP (1) JP3889933B2 (enExample)

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JP4131623B2 (ja) * 2001-09-12 2008-08-13 三洋電機株式会社 電極構造およびその製造方法
JP4514376B2 (ja) * 2001-09-27 2010-07-28 シャープ株式会社 窒化物半導体レーザ装置
US6967982B2 (en) * 2001-12-25 2005-11-22 The Furukawa Electric Co., Ltd. Semiconductor laser device with a strain reduction cushion function, semiconductor laser module, and semiconductor laser device fabrication method
JP2003264334A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体レーザ素子及び半導体レーザモジュール
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
EP1389812A1 (en) * 2002-08-13 2004-02-18 Agilent Technologies Inc A mounting arrangement for high frequency electro-optical components
JP2006179508A (ja) * 2003-03-06 2006-07-06 Matsushita Electric Ind Co Ltd 窒化物系ｉｉｉ−ｖ族化合物半導体発光素子の劣化防止方法
KR100964399B1 (ko) * 2003-03-08 2010-06-17 삼성전자주식회사 반도체 레이저 다이오드 및 이를 채용한 반도체 레이저다이오드 조립체
CN101661910B (zh) * 2003-10-27 2012-07-18 住友电气工业株式会社 氮化镓半导体衬底和蓝色发光器件
WO2006031254A2 (en) * 2004-03-26 2006-03-23 Bae Systems Information And Electronic Systems Integration, Inc. Compact high output power mid-infrared emitter system and method
US8133320B2 (en) * 2004-08-24 2012-03-13 Apollo Diamond, Inc. Diamond heat sink in a laser
JP4476105B2 (ja) * 2004-11-22 2010-06-09 三菱電機株式会社 窒化物半導体装置およびその製造方法
US7790484B2 (en) * 2005-06-08 2010-09-07 Sharp Kabushiki Kaisha Method for manufacturing laser devices
US7359416B2 (en) * 2006-03-15 2008-04-15 Matsushita Electric Industrial Co., Ltd. Optical semiconductor device
JP4974563B2 (ja) * 2006-03-30 2012-07-11 パナソニック株式会社 光半導体装置
JP2007250739A (ja) * 2006-03-15 2007-09-27 Matsushita Electric Ind Co Ltd 光半導体装置
JP2007299979A (ja) * 2006-05-01 2007-11-15 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶の表面処理方法およびｉｉｉ族窒化物結晶基板
JP5479667B2 (ja) * 2006-10-19 2014-04-23 古河電気工業株式会社 半導体パワーモジュール
JP4565350B2 (ja) * 2007-03-22 2010-10-20 ソニー株式会社 半導体レーザ装置
DE112007003508T5 (de) * 2007-05-18 2010-04-15 Mitsubishi Electric Corp. Optische Halbleitervorrichtung
KR100850780B1 (ko) * 2007-05-22 2008-08-06 삼성전기주식회사 질화물계 반도체 발광소자의 제조방법
KR20090022700A (ko) * 2007-08-31 2009-03-04 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2009129943A (ja) * 2007-11-20 2009-06-11 Mitsubishi Electric Corp 窒化物半導体装置とその製造方法
JP2012119637A (ja) * 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
JP5796181B2 (ja) 2012-05-22 2015-10-21 パナソニックＩｐマネジメント株式会社 窒化物半導体発光装置
WO2014141691A1 (ja) * 2013-03-15 2014-09-18 パナソニック株式会社 発光モジュール
JP6542514B2 (ja) * 2014-08-08 2019-07-10 住友電工デバイス・イノベーション株式会社 半導体レーザ装置
WO2018203466A1 (ja) * 2017-05-01 2018-11-08 パナソニックＩｐマネジメント株式会社 窒化物系発光装置
CN111386637B (zh) * 2017-11-24 2023-07-28 京瓷株式会社 发光元件搭载用基板和阵列基板、以及发光装置
US11267080B2 (en) 2019-05-09 2022-03-08 Indium Corporation Low temperature melting and mid temperature melting lead-free solder paste with mixed solder alloy powders
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EP3965146B1 (en) 2020-09-03 2025-04-09 Schott Ag Header for an electronic component
EP3965145B1 (en) 2020-09-03 2025-04-16 Schott Ag Transistor header for high-speed optoelectronic package
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US20020121863A1 (en) 2002-09-05
US6954034B2 (en) 2005-10-11
JP2002261376A (ja) 2002-09-13

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