JP2007538408A5 - - Google Patents

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Publication number
JP2007538408A5
JP2007538408A5 JP2007527328A JP2007527328A JP2007538408A5 JP 2007538408 A5 JP2007538408 A5 JP 2007538408A5 JP 2007527328 A JP2007527328 A JP 2007527328A JP 2007527328 A JP2007527328 A JP 2007527328A JP 2007538408 A5 JP2007538408 A5 JP 2007538408A5
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JP
Japan
Prior art keywords
epitaxial semiconductor
substrate
mirror layer
semiconductor structure
mirror
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JP2007527328A
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English (en)
Japanese (ja)
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JP2007538408A (ja
JP5468203B2 (ja
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Priority claimed from US10/848,937 external-priority patent/US7332365B2/en
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Publication of JP2007538408A5 publication Critical patent/JP2007538408A5/ja
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Publication of JP5468203B2 publication Critical patent/JP5468203B2/ja
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JP2007527328A 2004-05-18 2005-05-17 第３族窒化物デバイスを製造する方法およびその方法を使用して製造されたデバイス Expired - Lifetime JP5468203B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/848,937 2004-05-18
US10/848,937 US7332365B2 (en) 2004-05-18 2004-05-18 Method for fabricating group-III nitride devices and devices fabricated using method
PCT/US2005/016987 WO2005117152A1 (en) 2004-05-18 2005-05-17 Method for fabricating group iii nitride devices and devices fabricated using method

Publications (3)

Publication Number Publication Date
JP2007538408A JP2007538408A (ja) 2007-12-27
JP2007538408A5 true JP2007538408A5 (enExample) 2008-07-03
JP5468203B2 JP5468203B2 (ja) 2014-04-09

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JP2007527328A Expired - Lifetime JP5468203B2 (ja) 2004-05-18 2005-05-17 第３族窒化物デバイスを製造する方法およびその方法を使用して製造されたデバイス

Country Status (8)

Country Link
US (1) US7332365B2 (enExample)
EP (1) EP1763900B1 (enExample)
JP (1) JP5468203B2 (enExample)
KR (1) KR20070013324A (enExample)
CN (1) CN1957481A (enExample)
CA (1) CA2564995A1 (enExample)
TW (1) TWI390759B (enExample)
WO (1) WO2005117152A1 (enExample)

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