KR20070013324A - 3족 질화물 소자를 제조하는 방법 및 그 방법을 이용하여제조된 소자 - Google Patents

3족 질화물 소자를 제조하는 방법 및 그 방법을 이용하여제조된 소자 Download PDF

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Publication number
KR20070013324A
KR20070013324A KR1020067025952A KR20067025952A KR20070013324A KR 20070013324 A KR20070013324 A KR 20070013324A KR 1020067025952 A KR1020067025952 A KR 1020067025952A KR 20067025952 A KR20067025952 A KR 20067025952A KR 20070013324 A KR20070013324 A KR 20070013324A
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South Korea
Prior art keywords
layer
mirror
substrate
epitaxial semiconductor
epitaxial
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Korean (ko)
Inventor
슈지 나카무라
스티븐 덴바아스
존 에드몬드
우메시 미쉬라
챨스 수보다
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크리, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/862—Resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

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  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
KR1020067025952A 2004-05-18 2005-05-17 3족 질화물 소자를 제조하는 방법 및 그 방법을 이용하여제조된 소자 Withdrawn KR20070013324A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/848,937 2004-05-18
US10/848,937 US7332365B2 (en) 2004-05-18 2004-05-18 Method for fabricating group-III nitride devices and devices fabricated using method

Publications (1)

Publication Number Publication Date
KR20070013324A true KR20070013324A (ko) 2007-01-30

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KR1020067025952A Withdrawn KR20070013324A (ko) 2004-05-18 2005-05-17 3족 질화물 소자를 제조하는 방법 및 그 방법을 이용하여제조된 소자

Country Status (8)

Country Link
US (1) US7332365B2 (enExample)
EP (1) EP1763900B1 (enExample)
JP (1) JP5468203B2 (enExample)
KR (1) KR20070013324A (enExample)
CN (1) CN1957481A (enExample)
CA (1) CA2564995A1 (enExample)
TW (1) TWI390759B (enExample)
WO (1) WO2005117152A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011031098A3 (ko) * 2009-09-10 2011-06-23 주식회사 에피밸리 반도체 발광소자

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WO2011031098A3 (ko) * 2009-09-10 2011-06-23 주식회사 에피밸리 반도체 발광소자

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Publication number Publication date
TW200608605A (en) 2006-03-01
CA2564995A1 (en) 2005-12-08
WO2005117152A1 (en) 2005-12-08
US20060049411A1 (en) 2006-03-09
TWI390759B (zh) 2013-03-21
JP2007538408A (ja) 2007-12-27
EP1763900B1 (en) 2015-06-24
EP1763900A1 (en) 2007-03-21
JP5468203B2 (ja) 2014-04-09
CN1957481A (zh) 2007-05-02
US7332365B2 (en) 2008-02-19

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Date Code Title Description
PA0105 International application

Patent event date: 20061208

Patent event code: PA01051R01D

Comment text: International Patent Application

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