JPH11307870A5 - - Google Patents

Info

Publication number
JPH11307870A5
JPH11307870A5 JP1998112569A JP11256998A JPH11307870A5 JP H11307870 A5 JPH11307870 A5 JP H11307870A5 JP 1998112569 A JP1998112569 A JP 1998112569A JP 11256998 A JP11256998 A JP 11256998A JP H11307870 A5 JPH11307870 A5 JP H11307870A5
Authority
JP
Japan
Prior art keywords
substrate
semiconductor device
nitride
manufacturing
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998112569A
Other languages
English (en)
Japanese (ja)
Other versions
JP4126749B2 (ja
JPH11307870A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11256998A priority Critical patent/JP4126749B2/ja
Priority claimed from JP11256998A external-priority patent/JP4126749B2/ja
Priority to US09/291,016 priority patent/US6281032B1/en
Publication of JPH11307870A publication Critical patent/JPH11307870A/ja
Publication of JPH11307870A5 publication Critical patent/JPH11307870A5/ja
Application granted granted Critical
Publication of JP4126749B2 publication Critical patent/JP4126749B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP11256998A 1998-04-22 1998-04-22 半導体装置の製造方法 Expired - Fee Related JP4126749B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11256998A JP4126749B2 (ja) 1998-04-22 1998-04-22 半導体装置の製造方法
US09/291,016 US6281032B1 (en) 1998-04-22 1999-04-14 Manufacturing method for nitride III-V compound semiconductor device using bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11256998A JP4126749B2 (ja) 1998-04-22 1998-04-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH11307870A JPH11307870A (ja) 1999-11-05
JPH11307870A5 true JPH11307870A5 (enExample) 2005-08-11
JP4126749B2 JP4126749B2 (ja) 2008-07-30

Family

ID=14589999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11256998A Expired - Fee Related JP4126749B2 (ja) 1998-04-22 1998-04-22 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6281032B1 (enExample)
JP (1) JP4126749B2 (enExample)

Families Citing this family (40)

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US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US6184465B1 (en) * 1998-11-12 2001-02-06 Micron Technology, Inc. Semiconductor package
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US6445009B1 (en) * 2000-08-08 2002-09-03 Centre National De La Recherche Scientifique Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
DE10040450B4 (de) * 2000-08-18 2008-07-10 Osram Opto Semiconductors Gmbh Halbleiterlaserbauelement mit einem Kühlelement
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
JPWO2003034508A1 (ja) * 2001-10-12 2005-02-03 日亜化学工業株式会社 発光装置及びその製造方法
US6568098B1 (en) * 2001-12-28 2003-05-27 Microtool, Inc. Alignment wafer
US6665329B1 (en) * 2002-06-06 2003-12-16 Sandia Corporation Broadband visible light source based on AllnGaN light emitting diodes
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
JP2005150692A (ja) * 2003-10-21 2005-06-09 Sharp Corp 半導体レーザ装置
US7041579B2 (en) * 2003-10-22 2006-05-09 Northrop Grumman Corporation Hard substrate wafer sawing process
DE10355600B4 (de) * 2003-11-28 2021-06-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips
EP1569263B1 (de) * 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Verfahren zum Verbinden zweier Wafer
JP2006019400A (ja) * 2004-06-30 2006-01-19 Sanyo Electric Co Ltd 発光素子およびその製造方法
US7393790B2 (en) 2004-09-10 2008-07-01 Cree, Inc. Method of manufacturing carrier wafer and resulting carrier wafer structures
KR101211576B1 (ko) * 2004-11-04 2012-12-12 마이크로칩스 인코포레이티드 압축 및 냉간 용접 밀봉 방법 및 장치
JP2006179826A (ja) * 2004-12-24 2006-07-06 Fanuc Ltd 半導体レーザ装置
EP2797185B1 (en) * 2005-06-22 2018-09-05 MACOM Technology Solutions Holdings, Inc. AIGalnN-based lasers produced using etched facet technology
JP4411540B2 (ja) 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
JP4650631B2 (ja) * 2005-11-30 2011-03-16 ソニー株式会社 半導体発光装置
US20080145960A1 (en) * 2006-12-15 2008-06-19 Gelcore, Llc Super thin LED package for the backlighting applications and fabrication method
US20080181558A1 (en) * 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
KR101364719B1 (ko) * 2007-03-29 2014-02-20 서울바이오시스 주식회사 수직형 발광 다이오드 제조방법
EP1993126B1 (en) * 2007-05-18 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor substrate
DE102008014121A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Halbleiterchip
US9048169B2 (en) * 2008-05-23 2015-06-02 Soitec Formation of substantially pit free indium gallium nitride
KR101589897B1 (ko) * 2009-05-18 2016-01-29 박기용 서브마운트 접합 방법 및 그 장치
JP2011171327A (ja) * 2010-02-16 2011-09-01 Toshiba Corp 発光素子およびその製造方法、並びに発光装置
US9461027B2 (en) * 2012-08-07 2016-10-04 Koninklijke Philips N.V. LED package and manufacturing method
DE102012107409B4 (de) * 2012-08-13 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiter-Laserelements
JP6291822B2 (ja) * 2012-12-25 2018-03-14 株式会社ニコン 基板および基板接合方法
US9521795B2 (en) * 2013-03-12 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Two-step direct bonding processes and tools for performing the same
CN104051285B (zh) * 2013-03-12 2017-04-26 台湾积体电路制造股份有限公司 两步直接接合工艺及其实施工具
US9690042B2 (en) * 2013-05-23 2017-06-27 Electronics And Telecommunications Research Institute Optical input/output device, optical electronic system including the same, and method of manufacturing the same
JP6210415B2 (ja) * 2013-07-05 2017-10-11 パナソニックＩｐマネジメント株式会社 紫外線発光素子の製造方法
DE102017108385A1 (de) * 2017-04-20 2018-10-25 Osram Opto Semiconductors Gmbh Laserbarren und Halbleiterlaser sowie Verfahren zur Herstellung von Laserbarren und Halbleiterlasern
CN111183513A (zh) * 2019-04-19 2020-05-19 福建晶安光电有限公司 一种用于制作光电半导体芯片的方法及其所使用的键合晶圆
JP7502659B2 (ja) * 2021-12-23 2024-06-19 日亜化学工業株式会社 発光装置および基板

Family Cites Families (1)

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US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers

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