JP2018529234A - 発光デバイスおよび発光デバイスの製造方法 - Google Patents
発光デバイスおよび発光デバイスの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 190
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000005693 optoelectronics Effects 0.000 claims abstract description 7
- 238000000926 separation method Methods 0.000 claims description 22
- 230000007547 defect Effects 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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Abstract
Description
・動作中に光を放出する活性層をそれぞれ1つずつ含むモノリシックに結合された複数のピクセルをそれぞれ有する複数の半導体ユニットを、これらの半導体ユニットがそれぞれ1つずつの成長基板上に設けられた状態で用意する、方法ステップと、
・実装面および電気コンタクト構造体を有する接続基板を用意する、方法ステップと、
・半導体ユニットが横方向で相互に離間して実装面上に設けられるように、半導体ユニットを実装面に被着し、隣り合う各半導体ユニットの間隔を少なくとも5μm、最大で55μmとし、ピクセルを電気的に別個に駆動可能とする、方法ステップと、
・成長基板を少なくとも部分的に剥離させる、方法ステップと
を含む。
2 半導体ユニット
21 ピクセル
22 分離溝
B 幅
d 間隔
31 第1のはんだバンプ
32 接続面
33 接続領域
4 接続基板
4a 実装面
42 オプトエレクトロニクス半導体チップ
51 回路板
52 電気インタフェース
53 変換素子
Claims (16)
- 少なくとも1つのオプトエレクトロニクス半導体チップ(42)を含むデバイスであって、
・実装面(4a)および電気コンタクト構造体を有する接続基板(4)と、
・パターニングされた複数の半導体ユニット(2)と
を含み、前記複数の半導体ユニット(2)は、それぞれ、動作中に光を放出する活性層をそれぞれ1つずつ有する、モノリシックに結合された複数のピクセル(21)を含み、
・前記半導体ユニット(2)は、横方向で相互に離間して前記実装面(4a)上に設けられており、
・各ピクセル(21)は電気的に別個に駆動可能である、
デバイス。 - 隣り合う各半導体ユニット(2)の間隔(d)は、少なくとも5μm、最大で55μmである、
請求項1記載のデバイス。 - ・前記ピクセル(21)の前記活性層は、モノリシックに結合された状態で形成されており、
・前記ピクセル(21)は、横方向で離間した複数の半導体コンタクト(210)により電気的に別個に駆動可能であり、
・隣り合う各半導体コンタクト(210)の間隔(a)は、少なくとも1μm、最大で25μmである、
請求項1または2記載のデバイス。 - 隣り合う各ピクセル(21)の前記活性層間に、少なくとも5μm、最大で25μmの幅(B)を有する分離溝(22)がそれぞれ1つずつ設けられている、
請求項1から3までのいずれか1項記載のデバイス。 - 前記ピクセル(21)は、相互に光学的に分離されている、
請求項4記載のデバイス。 - 前記半導体ユニット(2)のうち少なくとも2つが、それぞれ異なる数のピクセル(21)を含む、
請求項1から5までのいずれか1項記載のデバイス。 - 前記接続基板(4)は、少なくとも1つの集積回路を有する、
請求項1から6までのいずれか1項記載のデバイス。 - 前記接続基板(4)は複数の電流源を含み、
各電流源は、前記ピクセル(21)の1つに一義的に対応づけられており、かつ該1つのピクセル(21)に導電接続されている、
請求項1から7までのいずれか1項記載のデバイス。 - 隣り合う各半導体ユニット(2)の前記間隔は、前記分離溝(22)の平均幅から最大で±10%偏差している、
請求項1から8までのいずれか1項記載のデバイス。 - 隣り合う各半導体ユニット(2)の前記間隔は、隣り合う各半導体ユニット(2)の平均間隔(d)から最大で±10%偏差している、
請求項1から9までのいずれか1項記載のデバイス。 - 前記デバイスの発光面積は、少なくとも8mm2、好ましくは少なくとも40mm2である、
請求項1から10までのいずれか1項記載のデバイス。 - 前記デバイスの前記ピクセル(21)の全数が、少なくとも128個、好ましくは少なくとも2500個であり、かつ/または
全数の前記ピクセル(21)から放出される光の光束が、少なくとも1600lm、好ましくは少なくとも6400lmである、
請求項1から11までのいずれか1項記載のデバイス。 - 前記デバイスは、回路板(51)上に配置された少なくとも2つのオプトエレクトロニクス半導体チップ(42)を含む、
請求項1から12までのいずれか1項記載のデバイス。 - デバイスの製造方法であって、
・動作中に光を放出する活性層をそれぞれ1つずつ有するモノリシックに形成された複数のピクセル(21)をそれぞれ含む複数の半導体ユニット(2)を、各半導体ユニット(2)がそれぞれ1つずつの成長基板(1)上に設けられた状態で用意する、方法ステップと、
・実装面(4a)および電気コンタクト構造体を有する接続基板(4)を用意する、方法ステップと、
・前記半導体ユニット(2)が横方向で相互に離間して前記実装面(4a)上に設けられるように、前記半導体ユニット(2)を前記実装面(4a)上に被着する、方法ステップと
を含み、
・隣り合う各半導体ユニット(2)の間隔(d)は、少なくとも5μm、最大で55μmであり、
・前記ピクセル(21)は、電気的に別個に駆動可能であり、
・前記成長基板(1)が少なくとも部分的に剥離される、
方法。 - 複数のピクセル(21)を含むウェハ複合体からの個別化により、前記半導体ユニット(2)を用意する、
請求項14記載の方法。 - 前記半導体ユニット(2)を用意する前記方法ステップは、さらに、
・エラーを有するピクセル(21)を含む半導体ユニットを求める、方法ステップと、
・製造許容差の範囲内で、欠陥のないピクセル(21)を含む半導体ユニットのみが前記実装面(4a)上に設けられるように、前記エラーを有するピクセル(21)を含む半導体ユニット(2)をスクリーニングする、方法ステップと
を含む、
請求項15記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102015115812.4 | 2015-09-18 | ||
DE102015115812.4A DE102015115812A1 (de) | 2015-09-18 | 2015-09-18 | Bauelement sowie Verfahren zur Herstellung eines Bauelements |
PCT/EP2016/071215 WO2017046000A1 (de) | 2015-09-18 | 2016-09-08 | Lichtemittierendes bauelement sowie verfahren zur herstellung eines lichtemittierenden bauelements |
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JP2018529234A true JP2018529234A (ja) | 2018-10-04 |
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JP2018513802A Pending JP2018529234A (ja) | 2015-09-18 | 2016-09-08 | 発光デバイスおよび発光デバイスの製造方法 |
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US (1) | US10504879B2 (ja) |
JP (1) | JP2018529234A (ja) |
CN (1) | CN108028261B (ja) |
DE (1) | DE102015115812A1 (ja) |
WO (1) | WO2017046000A1 (ja) |
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DE102020202425A1 (de) | 2020-02-26 | 2021-08-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer optoelektronischen vorrichtung und optoelektronische vorrichtung |
DE102021102332A1 (de) * | 2021-02-02 | 2022-08-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer anordnung von halbleiterchips und anordnung von halbleiterchips |
FR3125764B1 (fr) * | 2021-07-30 | 2023-11-03 | Faurecia Clarion Electronics Europe | Dispositif lumineux et composant de véhicule comprenant un tel dispositif lumineux |
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JP2015018948A (ja) * | 2013-07-11 | 2015-01-29 | ウシオ電機株式会社 | 光源ユニット |
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2015
- 2015-09-18 DE DE102015115812.4A patent/DE102015115812A1/de active Pending
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2016
- 2016-09-08 US US15/757,970 patent/US10504879B2/en active Active
- 2016-09-08 JP JP2018513802A patent/JP2018529234A/ja active Pending
- 2016-09-08 CN CN201680054089.7A patent/CN108028261B/zh active Active
- 2016-09-08 WO PCT/EP2016/071215 patent/WO2017046000A1/de active Application Filing
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DE102013102667A1 (de) * | 2013-03-15 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
JP2015018948A (ja) * | 2013-07-11 | 2015-01-29 | ウシオ電機株式会社 | 光源ユニット |
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US20180254264A1 (en) | 2018-09-06 |
US10504879B2 (en) | 2019-12-10 |
DE102015115812A1 (de) | 2017-03-23 |
CN108028261A (zh) | 2018-05-11 |
WO2017046000A1 (de) | 2017-03-23 |
CN108028261B (zh) | 2022-08-19 |
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