JP5711874B2 - 発光ダイオードのチップレベルパッケージ - Google Patents
発光ダイオードのチップレベルパッケージ Download PDFInfo
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- JP5711874B2 JP5711874B2 JP2009127957A JP2009127957A JP5711874B2 JP 5711874 B2 JP5711874 B2 JP 5711874B2 JP 2009127957 A JP2009127957 A JP 2009127957A JP 2009127957 A JP2009127957 A JP 2009127957A JP 5711874 B2 JP5711874 B2 JP 5711874B2
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- emitting diode
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- 239000000758 substrate Substances 0.000 claims description 71
- 239000010410 layer Substances 0.000 claims description 69
- 239000004065 semiconductor Substances 0.000 claims description 54
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 239000004038 photonic crystal Substances 0.000 claims description 10
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 34
- 238000000034 method Methods 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Description
101 成長基板
101a 成長基板の第一平面
101b 成長基板の第二平面
102 一時基板
103 永久基板
110 第一電気特性の半導体層
112 活性層
114 第二電気特性の半導体層
116 エピタキシャル構造
118 パターン化半導体構造
120a 第三電極
120b 第四電極
122 接続層
124 反射層
126 金属接着層
127 絶縁層
130 導電物質
132a 第一電極
132b 第二電極
134 電気接続構造
136 光出しマイクロ構造
137 フォトニック結晶構造
138 透明接着層
140 熱伝導用貫通穴
54 半導体エピタキシャルスタック層
56 電極
58 基板
62 はんだ
64 サブマウント
66 電気接続構造
400 発光ダイオードチップ
600 発光装置
Claims (14)
- 発光ダイオード素子であって、
第一平面及び第二平面を有する永久基板と、
前記永久基板の前記第一平面に位置する第一電極と、
前記永久基板の前記第一平面において前記第一電極以外の領域に位置する接着層と、
前記接着層に位置し、少なくとも、第一型半導体層と第二型半導体層とを含むパターン化半導体構造と、
前記パターン化半導体構造に位置し、且つ、前記第一型半導体層及び前記第二型半導体層とそれぞれ電気的に接続される第三電極及び第四電極と、
前記接着層と前記パターン化半導体構造との間に位置する成長基板と、
前記成長基板と接着層との間に位置する反射層と、
前記パターン化半導体構造、前記成長基板及び前記反射層の側壁に位置し、且つ、前記第三電極及び前記第四電極を前記第一電極と電気的に接続させるための電気接続構造と、
前記電気接続構造と、前記パターン化半導体構造、前記成長基板及び前記反射層の側壁との間に位置し、前記パターン化半導体構造、前記成長基板及び前記反射層を前記電気接続構造と絶縁させるための絶縁層と、
を含む、発光ダイオード素子。 - 前記成長基板は、研磨により薄くされ得る、請求項1に記載の発光ダイオード素子。
- 前記永久基板は、熱伝導用貫通穴をさらに有する、請求項1に記載の発光ダイオード素子。
- 前記永久基板には受動素子が埋め込まれることが可能であり、且つ、前記受動素子と前記パターン化半導体構造との間は直列方式又は並列方式で電気的に接続されることが可能である、請求項1に記載の発光ダイオード素子。
- 前記永久基板の材料は、セラミック材料、ガラス、複合材料又は高分子材料である、請求項1に記載の発光ダイオード素子。
- 前記パターン化半導体構造は、Ga、Al、In、As、P及びNからなるグループより選択される一つ以上の物質を含む、請求項1に記載の発光ダイオード素子。
- 前記パターン化半導体構造上に位置する光出しマイクロ構造をさらに含む、請求項1に記載の発光ダイオード素子。
- 前記光出しマイクロ構造の形状は、柱状、フレネルレンズ状又は鋸歯状である、請求項7に記載の発光ダイオード素子。
- 前記パターン化半導体構造上に位置するフォトニック結晶構造をさらに含む、請求項1に記載の発光ダイオード素子。
- 前記絶縁層は、窒化シリコン又は酸化シリコンである、請求項1に記載の発光ダイオード素子。
- 前記永久基板の前記第二平面に位置する第二電極をさらに含む、請求項1に記載の発光ダイオード素子。
- 前記永久基板は、導電物質が充填される複数の貫通穴を有し、前記第一電極と前記第二電極との間は、当該複数の貫通穴により導通される、請求項11に記載の発光ダイオード素子。
- 交流電気により操作される光電素子であって、
回路板と、
前記回路板に位置する複数の発光ダイオード素子と、
を含み、
前記発光ダイオード素子は、請求項1に記載の発光ダイオードである、光電素子。 - 前記複数の発光ダイオード素子の間は、直列方式で電気的に接続される、請求項13に記載の光電素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW97151602A TWI473246B (zh) | 2008-12-30 | 2008-12-30 | 發光二極體晶粒等級封裝 |
TW097151602 | 2008-12-30 |
Publications (2)
Publication Number | Publication Date |
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JP2010157679A JP2010157679A (ja) | 2010-07-15 |
JP5711874B2 true JP5711874B2 (ja) | 2015-05-07 |
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JP2009127957A Active JP5711874B2 (ja) | 2008-12-30 | 2009-05-27 | 発光ダイオードのチップレベルパッケージ |
Country Status (3)
Country | Link |
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US (1) | US8344412B2 (ja) |
JP (1) | JP5711874B2 (ja) |
TW (1) | TWI473246B (ja) |
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CN102185073B (zh) * | 2011-04-01 | 2012-09-19 | 厦门市三安光电科技有限公司 | 一种倒装发光二极管及其制作方法 |
CN102255034B (zh) * | 2011-07-15 | 2013-05-08 | 中国科学院半导体研究所 | 发光二极管封装结构 |
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TW201310706A (zh) * | 2011-08-22 | 2013-03-01 | Chi Mei Lighting Tech Corp | 發光二極體結構及其製造方法 |
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2009
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TW201025556A (en) | 2010-07-01 |
TWI473246B (zh) | 2015-02-11 |
US20100163907A1 (en) | 2010-07-01 |
JP2010157679A (ja) | 2010-07-15 |
US8344412B2 (en) | 2013-01-01 |
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