WO2009041462A1 - 窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法 - Google Patents
窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法 Download PDFInfo
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- WO2009041462A1 WO2009041462A1 PCT/JP2008/067238 JP2008067238W WO2009041462A1 WO 2009041462 A1 WO2009041462 A1 WO 2009041462A1 JP 2008067238 W JP2008067238 W JP 2008067238W WO 2009041462 A1 WO2009041462 A1 WO 2009041462A1
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- nitride
- group semiconductor
- light emitting
- semiconductor light
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
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- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US12/680,412 US8750343B2 (en) | 2007-09-28 | 2008-09-25 | Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer |
CN2008801089373A CN101809833B (zh) | 2007-09-28 | 2008-09-25 | 氮化物类半导体发光元件、氮化物类半导体激光元件、氮化物类半导体发光二极管及其制造方法和氮化物类半导体层的形成方法 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
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JP2007-253677 | 2007-09-28 | ||
JP2007253677A JP5078528B2 (ja) | 2007-09-28 | 2007-09-28 | 窒化物系半導体層の形成方法 |
JP2007289918A JP5232993B2 (ja) | 2007-11-07 | 2007-11-07 | 窒化物系半導体発光素子およびその製造方法 |
JP2007-289918 | 2007-11-07 | ||
JP2007331097A JP5172322B2 (ja) | 2007-12-21 | 2007-12-21 | 窒化物系半導体発光ダイオードおよびその製造方法 |
JP2007-331097 | 2007-12-21 | ||
JP2007-338897 | 2007-12-28 | ||
JP2007338897A JP5250759B2 (ja) | 2007-12-28 | 2007-12-28 | 窒化物系半導体レーザ素子およびその製造方法 |
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WO2009041462A1 true WO2009041462A1 (ja) | 2009-04-02 |
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PCT/JP2008/067238 WO2009041462A1 (ja) | 2007-09-28 | 2008-09-25 | 窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法 |
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US (1) | US8750343B2 (ja) |
CN (2) | CN101809833B (ja) |
WO (1) | WO2009041462A1 (ja) |
Cited By (3)
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WO2011040486A1 (ja) * | 2009-09-30 | 2011-04-07 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法 |
US8750343B2 (en) | 2007-09-28 | 2014-06-10 | Future Light, Llc | Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer |
US20200313399A1 (en) * | 2017-10-12 | 2020-10-01 | Osram Oled Gmbh | Semiconductor laser and method of production for optoelectronic semiconductor parts |
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JP2009158647A (ja) * | 2007-12-26 | 2009-07-16 | Sharp Corp | 窒化物系半導体レーザ素子およびその製造方法 |
JP5004989B2 (ja) * | 2009-03-27 | 2012-08-22 | シャープ株式会社 | 窒化物半導体発光素子及びその製造方法、並びに、半導体光学装置 |
JP4927121B2 (ja) * | 2009-05-29 | 2012-05-09 | シャープ株式会社 | 窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法 |
US20110001126A1 (en) * | 2009-07-02 | 2011-01-06 | Sharp Kabushiki Kaisha | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device |
US20110042646A1 (en) * | 2009-08-21 | 2011-02-24 | Sharp Kabushiki Kaisha | Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device |
JP5742344B2 (ja) * | 2011-03-20 | 2015-07-01 | 富士通株式会社 | 受光素子、光受信器及び光受信モジュール |
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US8971370B1 (en) * | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368332A (ja) * | 2001-06-05 | 2002-12-20 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体発光素子及びその製造方法 |
JP2005116926A (ja) * | 2003-10-10 | 2005-04-28 | Sony Corp | 半導体レーザ及び半導体レーザの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3143248B2 (ja) | 1993-01-19 | 2001-03-07 | 三洋電機株式会社 | 半導体レーザ装置 |
US5814533A (en) * | 1994-08-09 | 1998-09-29 | Rohm Co., Ltd. | Semiconductor light emitting element and manufacturing method therefor |
JPH0864912A (ja) | 1994-08-26 | 1996-03-08 | Rohm Co Ltd | 半導体発光素子およびその製法 |
JP3318811B2 (ja) | 1994-12-29 | 2002-08-26 | ソニー株式会社 | 半導体発光素子のパッケージ及びその製造方法 |
JPH08213692A (ja) | 1995-02-03 | 1996-08-20 | Hitachi Ltd | 半導体レーザ装置 |
JP2000106470A (ja) | 1998-09-29 | 2000-04-11 | Sharp Corp | 半導体レーザ素子の製造方法及び半導体レーザ素子 |
JP3973799B2 (ja) | 1999-07-06 | 2007-09-12 | 松下電器産業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP3505478B2 (ja) | 2000-06-28 | 2004-03-08 | 三洋電機株式会社 | 窒化物系半導体レーザ素子および窒化物系半導体レーザ装置の製造方法 |
JP2003023215A (ja) | 2001-07-05 | 2003-01-24 | Sony Corp | 半導体素子の製造方法および半導体レーザの製造方法 |
JP2003133642A (ja) * | 2001-10-19 | 2003-05-09 | Hitachi Ltd | 半導体レーザ素子及び光電子装置 |
JP4854275B2 (ja) * | 2004-12-08 | 2012-01-18 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
JP2009065048A (ja) * | 2007-09-07 | 2009-03-26 | Rohm Co Ltd | 半導体発光素子およびその製造方法 |
WO2009041462A1 (ja) | 2007-09-28 | 2009-04-02 | Sanyo Electric Co., Ltd. | 窒化物系半導体発光素子、窒化物系半導体レーザ素子、窒化物系半導体発光ダイオードおよびそれらの製造方法ならびに窒化物系半導体層の形成方法 |
CN103199433A (zh) * | 2007-12-21 | 2013-07-10 | 未来之光有限责任公司 | 氮化物类半导体发光二极管、氮化物类半导体激光元件及其制造方法和氮化物类半导体层的形成方法 |
-
2008
- 2008-09-25 WO PCT/JP2008/067238 patent/WO2009041462A1/ja active Application Filing
- 2008-09-25 US US12/680,412 patent/US8750343B2/en active Active
- 2008-09-25 CN CN2008801089373A patent/CN101809833B/zh active Active
- 2008-09-25 CN CN2012100733253A patent/CN102545055A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002368332A (ja) * | 2001-06-05 | 2002-12-20 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体発光素子及びその製造方法 |
JP2005116926A (ja) * | 2003-10-10 | 2005-04-28 | Sony Corp | 半導体レーザ及び半導体レーザの製造方法 |
Non-Patent Citations (2)
Title |
---|
AKASAKA T. ET AL.: "An InGaN-based horizontal-cavity surface-emitting laser diode", APPLIED PHYSICS LETTERS, vol. 84, no. 20, 2004, pages 4104 - 4106 * |
OKAMOTO K. ET AL.: "Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 46, no. 35, 7 September 2007 (2007-09-07), pages L820 - L822 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8750343B2 (en) | 2007-09-28 | 2014-06-10 | Future Light, Llc | Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer |
WO2011040486A1 (ja) * | 2009-09-30 | 2011-04-07 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法 |
US8541253B2 (en) | 2009-09-30 | 2013-09-24 | Sumitomo Electric Industries, Ltd. | III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device |
US20200313399A1 (en) * | 2017-10-12 | 2020-10-01 | Osram Oled Gmbh | Semiconductor laser and method of production for optoelectronic semiconductor parts |
US11735887B2 (en) * | 2017-10-12 | 2023-08-22 | Osram Oled Gmbh | Semiconductor laser and method of production for optoelectronic semiconductor parts |
US11870214B2 (en) | 2017-10-12 | 2024-01-09 | Osram Oled Gmbh | Semiconductor laser and method of production for optoelectronic semiconductor parts |
Also Published As
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CN101809833A (zh) | 2010-08-18 |
US8750343B2 (en) | 2014-06-10 |
CN102545055A (zh) | 2012-07-04 |
CN101809833B (zh) | 2012-05-30 |
US20100246624A1 (en) | 2010-09-30 |
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