GB2378039B - AlInGaN LED Device - Google Patents

AlInGaN LED Device

Info

Publication number
GB2378039B
GB2378039B GB0118410A GB0118410A GB2378039B GB 2378039 B GB2378039 B GB 2378039B GB 0118410 A GB0118410 A GB 0118410A GB 0118410 A GB0118410 A GB 0118410A GB 2378039 B GB2378039 B GB 2378039B
Authority
GB
United Kingdom
Prior art keywords
led device
alingan led
alingan
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0118410A
Other versions
GB0118410D0 (en
GB2378039A (en
Inventor
Juses Chao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB0118410A priority Critical patent/GB2378039B/en
Priority to DE20113042U priority patent/DE20113042U1/en
Publication of GB0118410D0 publication Critical patent/GB0118410D0/en
Publication of GB2378039A publication Critical patent/GB2378039A/en
Application granted granted Critical
Publication of GB2378039B publication Critical patent/GB2378039B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
GB0118410A 2001-07-27 2001-07-27 AlInGaN LED Device Expired - Fee Related GB2378039B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0118410A GB2378039B (en) 2001-07-27 2001-07-27 AlInGaN LED Device
DE20113042U DE20113042U1 (en) 2001-07-27 2001-08-06 Amorphous AlInGaN LED diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0118410A GB2378039B (en) 2001-07-27 2001-07-27 AlInGaN LED Device
DE20113042U DE20113042U1 (en) 2001-07-27 2001-08-06 Amorphous AlInGaN LED diode

Publications (3)

Publication Number Publication Date
GB0118410D0 GB0118410D0 (en) 2001-09-19
GB2378039A GB2378039A (en) 2003-01-29
GB2378039B true GB2378039B (en) 2003-09-17

Family

ID=26057137

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0118410A Expired - Fee Related GB2378039B (en) 2001-07-27 2001-07-27 AlInGaN LED Device

Country Status (2)

Country Link
DE (1) DE20113042U1 (en)
GB (1) GB2378039B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2231171C1 (en) * 2003-04-30 2004-06-20 Закрытое акционерное общество "Инновационная фирма "ТЕТИС" Light-emitting diode
RU2247444C1 (en) * 2004-03-15 2005-02-27 Закрытое акционерное общество "Инновационная фирма "ТЕТИС" Heavy-power light-emitting diode
US7534638B2 (en) * 2006-12-22 2009-05-19 Philips Lumiled Lighting Co., Llc III-nitride light emitting devices grown on templates to reduce strain
US7547908B2 (en) * 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0743727A1 (en) * 1995-05-19 1996-11-20 Nec Corporation GaN system semiconductor laser device
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
WO1999059195A1 (en) * 1998-05-13 1999-11-18 National University Of Singapore Crystal growth method for group-iii nitride and related compound semiconductors
EP0996173A2 (en) * 1998-10-23 2000-04-26 Xerox Corporation Light-emitting devices including polycrystalline GaN layers and method of forming devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5838029A (en) * 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
EP0743727A1 (en) * 1995-05-19 1996-11-20 Nec Corporation GaN system semiconductor laser device
WO1999059195A1 (en) * 1998-05-13 1999-11-18 National University Of Singapore Crystal growth method for group-iii nitride and related compound semiconductors
EP0996173A2 (en) * 1998-10-23 2000-04-26 Xerox Corporation Light-emitting devices including polycrystalline GaN layers and method of forming devices

Also Published As

Publication number Publication date
DE20113042U1 (en) 2001-11-15
GB0118410D0 (en) 2001-09-19
GB2378039A (en) 2003-01-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050727