AU2001266602A1 - Amorphous aluminum nitride emitter - Google Patents

Amorphous aluminum nitride emitter

Info

Publication number
AU2001266602A1
AU2001266602A1 AU2001266602A AU6660201A AU2001266602A1 AU 2001266602 A1 AU2001266602 A1 AU 2001266602A1 AU 2001266602 A AU2001266602 A AU 2001266602A AU 6660201 A AU6660201 A AU 6660201A AU 2001266602 A1 AU2001266602 A1 AU 2001266602A1
Authority
AU
Australia
Prior art keywords
aluminum nitride
amorphous aluminum
nitride emitter
emitter
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001266602A
Inventor
Martin E. Kordesch
Hugh Richardson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ohio University
Original Assignee
Ohio University
Ohio State University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ohio University, Ohio State University filed Critical Ohio University
Publication of AU2001266602A1 publication Critical patent/AU2001266602A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/77066—Aluminium Nitrides or Aluminium Oxynitrides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
AU2001266602A 2000-05-23 2001-05-23 Amorphous aluminum nitride emitter Abandoned AU2001266602A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20654000P 2000-05-23 2000-05-23
US60/206,540 2000-05-23
PCT/US2001/016850 WO2001091451A2 (en) 2000-05-23 2001-05-23 Amorphous aluminum nitride emitter

Publications (1)

Publication Number Publication Date
AU2001266602A1 true AU2001266602A1 (en) 2001-12-03

Family

ID=22766841

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001266602A Abandoned AU2001266602A1 (en) 2000-05-23 2001-05-23 Amorphous aluminum nitride emitter

Country Status (3)

Country Link
US (1) US6689630B2 (en)
AU (1) AU2001266602A1 (en)
WO (1) WO2001091451A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129223A1 (en) * 2002-12-24 2004-07-08 Park Jong Hyurk Apparatus and method for manufacturing silicon nanodot film for light emission
JP4874879B2 (en) * 2007-06-21 2012-02-15 Ｊｘ日鉱日石金属株式会社 Erbium sputtering target and manufacturing method thereof
EP2383354B1 (en) * 2009-01-29 2018-03-07 JX Nippon Mining & Metals Corporation Method for manufacturing high-purity erbium, high-purity erbium, sputtering target composed of high-purity erbium

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979271A (en) 1973-07-23 1976-09-07 Westinghouse Electric Corporation Deposition of solid semiconductor compositions and novel semiconductor materials
US4616248A (en) 1985-05-20 1986-10-07 Honeywell Inc. UV photocathode using negative electron affinity effect in Alx Ga1 N
JPS6393860A (en) * 1986-10-08 1988-04-25 Seiko Epson Corp Production of thin film
US4798701A (en) 1987-07-13 1989-01-17 International Business Machines Corporation Method of synthesizing amorphous group IIIA-group VA compounds
DE3802998A1 (en) 1988-02-02 1989-08-10 Basf Ag METHOD FOR PRODUCING A THIN ROENGENAMORPHEN ALUMINUM NITRIDE OR ALUMINUM SILICON NITRIDE LAYER ON A SURFACE
US4915810A (en) * 1988-04-25 1990-04-10 Unisys Corporation Target source for ion beam sputter deposition
JPH01290765A (en) 1988-05-16 1989-11-22 Toshiba Corp Sputtering target
US4971928A (en) 1990-01-16 1990-11-20 General Motors Corporation Method of making a light emitting semiconductor having a rear reflecting surface
JPH07161659A (en) 1993-12-07 1995-06-23 Nec Corp Semiconductor device and its manufacture
WO1996011498A1 (en) 1994-10-11 1996-04-18 International Business Machines Corporation Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications
US5834053A (en) 1994-11-30 1998-11-10 The Regents Of The University Of California Blue light emitting thiogallate phosphor
US5562781A (en) 1995-01-19 1996-10-08 Ohio University Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell
US5739180A (en) 1996-05-02 1998-04-14 Lucent Technologies Inc. Flat panel displays and methods and substrates therefor
JPH1016112A (en) * 1996-07-05 1998-01-20 Mitsui Petrochem Ind Ltd Reflecting member for liquid crystal displaying element
US5939825A (en) 1996-12-02 1999-08-17 Planar Systems, Inc. Alternating current thin film electroluminescent device having blue light emitting alkaline earth phosphor
GB9801066D0 (en) 1998-01-19 1998-03-18 Univ Surrey Methods for manufacturing semiconductor thin films
US6072198A (en) 1998-09-14 2000-06-06 Planar Systems Inc Electroluminescent alkaline-earth sulfide phosphor thin films with multiple coactivator dopants
US6169359B1 (en) 1998-09-14 2001-01-02 Planar Systems, Inc. Electroluminescent phosphor thin films with increased brightness that includes an alkali halide
EP0996173B1 (en) 1998-10-23 2015-12-30 Xerox Corporation Semiconductor structures including polycrystalline GaN layers and method of manufacturing
US6255669B1 (en) * 1999-04-23 2001-07-03 The University Of Cincinnati Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element

Also Published As

Publication number Publication date
WO2001091451A2 (en) 2001-11-29
WO2001091451B1 (en) 2003-02-20
US20020003284A1 (en) 2002-01-10
US6689630B2 (en) 2004-02-10
WO2001091451A3 (en) 2002-08-01

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