GB9801066D0 - Methods for manufacturing semiconductor thin films - Google Patents
Methods for manufacturing semiconductor thin filmsInfo
- Publication number
- GB9801066D0 GB9801066D0 GBGB9801066.3A GB9801066A GB9801066D0 GB 9801066 D0 GB9801066 D0 GB 9801066D0 GB 9801066 A GB9801066 A GB 9801066A GB 9801066 D0 GB9801066 D0 GB 9801066D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- methods
- thin films
- semiconductor thin
- manufacturing semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9801066.3A GB9801066D0 (en) | 1998-01-19 | 1998-01-19 | Methods for manufacturing semiconductor thin films |
PCT/GB1999/000127 WO1999036968A1 (en) | 1998-01-19 | 1999-01-15 | Methods for manufacturing semiconductor thin films using ion beam synthesis |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9801066.3A GB9801066D0 (en) | 1998-01-19 | 1998-01-19 | Methods for manufacturing semiconductor thin films |
Publications (1)
Publication Number | Publication Date |
---|---|
GB9801066D0 true GB9801066D0 (en) | 1998-03-18 |
Family
ID=10825500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB9801066.3A Ceased GB9801066D0 (en) | 1998-01-19 | 1998-01-19 | Methods for manufacturing semiconductor thin films |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB9801066D0 (en) |
WO (1) | WO1999036968A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001033643A1 (en) | 1999-10-29 | 2001-05-10 | Ohio University | BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS |
US6689630B2 (en) | 2000-05-23 | 2004-02-10 | Ohio University | Method of forming an amorphous aluminum nitride emitter including a rare earth or transition metal element |
RU2699606C1 (en) * | 2016-11-28 | 2019-09-06 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" | Method for ion-beam synthesis of gallium nitride in silicon |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2679354B2 (en) * | 1990-04-13 | 1997-11-19 | 松下電器産業株式会社 | Nonlinear optical material and manufacturing method thereof |
US5536193A (en) * | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
GB2288062A (en) * | 1994-03-24 | 1995-10-04 | Univ Surrey | Forming luminescent silicon material and devices |
-
1998
- 1998-01-19 GB GBGB9801066.3A patent/GB9801066D0/en not_active Ceased
-
1999
- 1999-01-15 WO PCT/GB1999/000127 patent/WO1999036968A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO1999036968A1 (en) | 1999-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |