FR2875333B1 - Realisation d'une couche de nitrure d'indium - Google Patents
Realisation d'une couche de nitrure d'indiumInfo
- Publication number
- FR2875333B1 FR2875333B1 FR0409813A FR0409813A FR2875333B1 FR 2875333 B1 FR2875333 B1 FR 2875333B1 FR 0409813 A FR0409813 A FR 0409813A FR 0409813 A FR0409813 A FR 0409813A FR 2875333 B1 FR2875333 B1 FR 2875333B1
- Authority
- FR
- France
- Prior art keywords
- making
- nitride layer
- indium nitride
- indium
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0409813A FR2875333B1 (fr) | 2004-09-16 | 2004-09-16 | Realisation d'une couche de nitrure d'indium |
PCT/FR2005/002275 WO2006032756A1 (fr) | 2004-09-16 | 2005-09-14 | Réalisation d'une couche de nitrure d'indium |
EP05802711A EP1799886A1 (fr) | 2004-09-16 | 2005-09-14 | Realisation d'une couche de nitrure d'indium |
US11/662,491 US7696533B2 (en) | 2004-09-16 | 2005-09-14 | Indium nitride layer production |
JP2007531794A JP2008513327A (ja) | 2004-09-16 | 2005-09-14 | 窒化インジウム層の実現方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0409813A FR2875333B1 (fr) | 2004-09-16 | 2004-09-16 | Realisation d'une couche de nitrure d'indium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2875333A1 FR2875333A1 (fr) | 2006-03-17 |
FR2875333B1 true FR2875333B1 (fr) | 2006-12-15 |
Family
ID=34949869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0409813A Expired - Fee Related FR2875333B1 (fr) | 2004-09-16 | 2004-09-16 | Realisation d'une couche de nitrure d'indium |
Country Status (5)
Country | Link |
---|---|
US (1) | US7696533B2 (fr) |
EP (1) | EP1799886A1 (fr) |
JP (1) | JP2008513327A (fr) |
FR (1) | FR2875333B1 (fr) |
WO (1) | WO2006032756A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2932608B1 (fr) * | 2008-06-13 | 2011-04-22 | Centre Nat Rech Scient | Procede de croissance de nitrure d'elements du groupe iii. |
US20120204957A1 (en) * | 2011-02-10 | 2012-08-16 | David Nicholls | METHOD FOR GROWING AlInGaN LAYER |
US10707082B2 (en) * | 2011-07-06 | 2020-07-07 | Asm International N.V. | Methods for depositing thin films comprising indium nitride by atomic layer deposition |
JP6485858B2 (ja) * | 2015-02-24 | 2019-03-20 | 国立研究開発法人物質・材料研究機構 | Zn原子とSn原子とN原子を含むβ−NaFeO2型構造の高結晶性化合物及びその製法、並びにその用途 |
JP7212173B2 (ja) * | 2019-10-09 | 2023-01-24 | パナソニックIpマネジメント株式会社 | 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284395B1 (en) * | 1997-03-05 | 2001-09-04 | Corning Applied Technologies Corp. | Nitride based semiconductors and devices |
US6121639A (en) * | 1998-08-20 | 2000-09-19 | Xerox Corporation | Optoelectronic devices based on ZnGeN2 integrated with group III-V nitrides |
EP0996173B1 (fr) * | 1998-10-23 | 2015-12-30 | Xerox Corporation | Structures semiconductrices comportant des couches polycristallines de GaN et procédé de fabrication |
US6306739B1 (en) * | 1999-04-27 | 2001-10-23 | The United States Of America As Represented By The Secretary Of The Air Force | Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom |
JP2001308017A (ja) * | 2000-04-24 | 2001-11-02 | Sony Corp | p型窒化物系III−V族化合物半導体の製造方法および半導体素子の製造方法 |
JP2002338399A (ja) * | 2001-05-22 | 2002-11-27 | Hitachi Cable Ltd | 窒化物化合物半導体結晶の製造方法及び窒化物化合物半導体結晶並びに半導体デバイス |
-
2004
- 2004-09-16 FR FR0409813A patent/FR2875333B1/fr not_active Expired - Fee Related
-
2005
- 2005-09-14 JP JP2007531794A patent/JP2008513327A/ja active Pending
- 2005-09-14 US US11/662,491 patent/US7696533B2/en not_active Expired - Fee Related
- 2005-09-14 EP EP05802711A patent/EP1799886A1/fr not_active Withdrawn
- 2005-09-14 WO PCT/FR2005/002275 patent/WO2006032756A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2008513327A (ja) | 2008-05-01 |
EP1799886A1 (fr) | 2007-06-27 |
US7696533B2 (en) | 2010-04-13 |
WO2006032756A1 (fr) | 2006-03-30 |
US20070269965A1 (en) | 2007-11-22 |
FR2875333A1 (fr) | 2006-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20140530 |