FR2875333B1 - Realisation d'une couche de nitrure d'indium - Google Patents

Realisation d'une couche de nitrure d'indium

Info

Publication number
FR2875333B1
FR2875333B1 FR0409813A FR0409813A FR2875333B1 FR 2875333 B1 FR2875333 B1 FR 2875333B1 FR 0409813 A FR0409813 A FR 0409813A FR 0409813 A FR0409813 A FR 0409813A FR 2875333 B1 FR2875333 B1 FR 2875333B1
Authority
FR
France
Prior art keywords
making
nitride layer
indium nitride
indium
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0409813A
Other languages
English (en)
Other versions
FR2875333A1 (fr
Inventor
Bernard Gil
Olivier Gerard Serge Briot
Sandra Ruffenach
Benedicte Maleyre
Thierry Joseph Roland Cloitre
Roger Louis Aulombard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Montpellier 2 Sciences et Techniques
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Montpellier 2 Sciences et Techniques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Montpellier 2 Sciences et Techniques filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0409813A priority Critical patent/FR2875333B1/fr
Priority to JP2007531794A priority patent/JP2008513327A/ja
Priority to EP05802711A priority patent/EP1799886A1/fr
Priority to US11/662,491 priority patent/US7696533B2/en
Priority to PCT/FR2005/002275 priority patent/WO2006032756A1/fr
Publication of FR2875333A1 publication Critical patent/FR2875333A1/fr
Application granted granted Critical
Publication of FR2875333B1 publication Critical patent/FR2875333B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
FR0409813A 2004-09-16 2004-09-16 Realisation d'une couche de nitrure d'indium Expired - Fee Related FR2875333B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0409813A FR2875333B1 (fr) 2004-09-16 2004-09-16 Realisation d'une couche de nitrure d'indium
JP2007531794A JP2008513327A (ja) 2004-09-16 2005-09-14 窒化インジウム層の実現方法
EP05802711A EP1799886A1 (fr) 2004-09-16 2005-09-14 Realisation d'une couche de nitrure d'indium
US11/662,491 US7696533B2 (en) 2004-09-16 2005-09-14 Indium nitride layer production
PCT/FR2005/002275 WO2006032756A1 (fr) 2004-09-16 2005-09-14 Réalisation d'une couche de nitrure d'indium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0409813A FR2875333B1 (fr) 2004-09-16 2004-09-16 Realisation d'une couche de nitrure d'indium

Publications (2)

Publication Number Publication Date
FR2875333A1 FR2875333A1 (fr) 2006-03-17
FR2875333B1 true FR2875333B1 (fr) 2006-12-15

Family

ID=34949869

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0409813A Expired - Fee Related FR2875333B1 (fr) 2004-09-16 2004-09-16 Realisation d'une couche de nitrure d'indium

Country Status (5)

Country Link
US (1) US7696533B2 (fr)
EP (1) EP1799886A1 (fr)
JP (1) JP2008513327A (fr)
FR (1) FR2875333B1 (fr)
WO (1) WO2006032756A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2932608B1 (fr) * 2008-06-13 2011-04-22 Centre Nat Rech Scient Procede de croissance de nitrure d'elements du groupe iii.
US20120204957A1 (en) * 2011-02-10 2012-08-16 David Nicholls METHOD FOR GROWING AlInGaN LAYER
US10707082B2 (en) * 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
JP6485858B2 (ja) * 2015-02-24 2019-03-20 国立研究開発法人物質・材料研究機構 Ｚｎ原子とＳｎ原子とＮ原子を含むβ−ＮａＦｅＯ２型構造の高結晶性化合物及びその製法、並びにその用途
JP7212173B2 (ja) * 2019-10-09 2023-01-24 パナソニックＩｐマネジメント株式会社 窒化物半導体構造体、窒化物半導体デバイス及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6284395B1 (en) * 1997-03-05 2001-09-04 Corning Applied Technologies Corp. Nitride based semiconductors and devices
US6121639A (en) * 1998-08-20 2000-09-19 Xerox Corporation Optoelectronic devices based on ZnGeN2 integrated with group III-V nitrides
EP0996173B1 (fr) * 1998-10-23 2015-12-30 Xerox Corporation Structures semiconductrices comportant des couches polycristallines de GaN et procédé de fabrication
US6306739B1 (en) * 1999-04-27 2001-10-23 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for depositing thin films of group III nitrides and other films and devices made therefrom
JP2001308017A (ja) * 2000-04-24 2001-11-02 Sony Corp ｐ型窒化物系ＩＩＩ−Ｖ族化合物半導体の製造方法および半導体素子の製造方法
JP2002338399A (ja) * 2001-05-22 2002-11-27 Hitachi Cable Ltd 窒化物化合物半導体結晶の製造方法及び窒化物化合物半導体結晶並びに半導体デバイス

Also Published As

Publication number Publication date
FR2875333A1 (fr) 2006-03-17
WO2006032756A1 (fr) 2006-03-30
US20070269965A1 (en) 2007-11-22
EP1799886A1 (fr) 2007-06-27
JP2008513327A (ja) 2008-05-01
US7696533B2 (en) 2010-04-13

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140530