JP2000082671A - 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法 - Google Patents

窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法

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Publication number
JP2000082671A
JP2000082671A JP10248709A JP24870998A JP2000082671A JP 2000082671 A JP2000082671 A JP 2000082671A JP 10248709 A JP10248709 A JP 10248709A JP 24870998 A JP24870998 A JP 24870998A JP 2000082671 A JP2000082671 A JP 2000082671A
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Japan
Prior art keywords
layer
gan
compound semiconductor
iii
lattice constant
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JP10248709A
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English (en)
Japanese (ja)
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JP2000082671A5 (enExample
Inventor
Kenji Funato
健次 船戸
Katsunori Yanashima
克典 簗嶋
Shigeki Hashimoto
茂樹 橋本
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Sony Corp
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Sony Corp
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Priority to JP10248709A priority Critical patent/JP2000082671A/ja
Publication of JP2000082671A publication Critical patent/JP2000082671A/ja
Publication of JP2000082671A5 publication Critical patent/JP2000082671A5/ja
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
JP10248709A 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法 Pending JP2000082671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10248709A JP2000082671A (ja) 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-180801 1998-06-26
JP18080198 1998-06-26
JP10248709A JP2000082671A (ja) 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法

Publications (2)

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JP2000082671A true JP2000082671A (ja) 2000-03-21
JP2000082671A5 JP2000082671A5 (enExample) 2005-10-13

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JP10248709A Pending JP2000082671A (ja) 1998-06-26 1998-09-02 窒化物系ｉｉｉ−ｖ族化合物半導体装置とその製造方法

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JP (1) JP2000082671A (enExample)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6441391B1 (en) 2000-09-01 2002-08-27 Nec Corporation Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate
JP2002270618A (ja) * 2001-03-06 2002-09-20 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタ
WO2002078067A1 (en) * 2001-03-23 2002-10-03 Yasuhiko Arakawa Method for growing crystal of gallium nitride compound semiconductor and electronic device having gallium nitride compound semiconductor
WO2003063215A1 (en) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device manufacturing method
JP2004502298A (ja) * 2000-06-28 2004-01-22 アドバンスド．テクノロジー．マテリアルス．インコーポレイテッド オプトエレクトロニクスデバイスおよびエレクトロニクスデバイス用窒化アルミニウム、インジウム、ガリウム（（Ａｌ，Ｉｎ，Ｇａ）Ｎ）自立基板のエピタキシー品質（表面凹凸および欠陥密度）の改良を実現する方法
JP2004327882A (ja) * 2003-04-28 2004-11-18 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
JP2006186257A (ja) * 2004-12-28 2006-07-13 Sony Corp 半導体発光素子の製造方法、集積型半導体発光装置の製造方法、画像表示装置の製造方法および照明装置の製造方法
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
JP2007290960A (ja) * 2006-04-25 2007-11-08 Samsung Electro Mech Co Ltd 非極性ｍ面窒化物半導体の製造方法
JP2012142629A (ja) * 2005-06-10 2012-07-26 Cree Inc 炭化シリコン基板上のｉｉｉ族窒化物エピタキシャル層
JP2013123046A (ja) * 2012-11-19 2013-06-20 Toshiba Corp 半導体発光素子の製造方法
JP2013153189A (ja) * 2004-05-11 2013-08-08 Cree Inc 複数のフィールドプレートを有するワイドバンドギャップトランジスタ
US8933486B2 (en) 2006-11-13 2015-01-13 Cree, Inc. GaN based HEMTs with buried field plates
US9397173B2 (en) 2003-09-09 2016-07-19 Cree, Inc. Wide bandgap transistor devices with field plates
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US10109713B2 (en) 2003-09-09 2018-10-23 The Regents Of The University Of California Fabrication of single or multiple gate field plates
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004502298A (ja) * 2000-06-28 2004-01-22 アドバンスド．テクノロジー．マテリアルス．インコーポレイテッド オプトエレクトロニクスデバイスおよびエレクトロニクスデバイス用窒化アルミニウム、インジウム、ガリウム（（Ａｌ，Ｉｎ，Ｇａ）Ｎ）自立基板のエピタキシー品質（表面凹凸および欠陥密度）の改良を実現する方法
US6441391B1 (en) 2000-09-01 2002-08-27 Nec Corporation Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate
JP2002270618A (ja) * 2001-03-06 2002-09-20 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタ
WO2002078067A1 (en) * 2001-03-23 2002-10-03 Yasuhiko Arakawa Method for growing crystal of gallium nitride compound semiconductor and electronic device having gallium nitride compound semiconductor
WO2003063215A1 (en) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device manufacturing method
US6764871B2 (en) 2002-01-21 2004-07-20 Matsushita Electric Industrial Co., Ltd. Method for fabricating a nitride semiconductor device
JP2004327882A (ja) * 2003-04-28 2004-11-18 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
US9397173B2 (en) 2003-09-09 2016-07-19 Cree, Inc. Wide bandgap transistor devices with field plates
US10109713B2 (en) 2003-09-09 2018-10-23 The Regents Of The University Of California Fabrication of single or multiple gate field plates
JP2013153189A (ja) * 2004-05-11 2013-08-08 Cree Inc 複数のフィールドプレートを有するワイドバンドギャップトランジスタ
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP2006186257A (ja) * 2004-12-28 2006-07-13 Sony Corp 半導体発光素子の製造方法、集積型半導体発光装置の製造方法、画像表示装置の製造方法および照明装置の製造方法
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2006344930A (ja) * 2005-04-07 2006-12-21 Showa Denko Kk Ｉｉｉ族窒化物半導体素子の製造方法
JP2012142629A (ja) * 2005-06-10 2012-07-26 Cree Inc 炭化シリコン基板上のｉｉｉ族窒化物エピタキシャル層
JP2007290960A (ja) * 2006-04-25 2007-11-08 Samsung Electro Mech Co Ltd 非極性ｍ面窒化物半導体の製造方法
US8933486B2 (en) 2006-11-13 2015-01-13 Cree, Inc. GaN based HEMTs with buried field plates
JP2013123046A (ja) * 2012-11-19 2013-06-20 Toshiba Corp 半導体発光素子の製造方法
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures

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