JP2000082671A5 - - Google Patents

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Publication number
JP2000082671A5
JP2000082671A5 JP1998248709A JP24870998A JP2000082671A5 JP 2000082671 A5 JP2000082671 A5 JP 2000082671A5 JP 1998248709 A JP1998248709 A JP 1998248709A JP 24870998 A JP24870998 A JP 24870998A JP 2000082671 A5 JP2000082671 A5 JP 2000082671A5
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JP
Japan
Prior art keywords
nitride
manufacturing
semiconductor device
range
compound semiconductor
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Pending
Application number
JP1998248709A
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Japanese (ja)
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JP2000082671A (en
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Priority to JP10248709A priority Critical patent/JP2000082671A/en
Priority claimed from JP10248709A external-priority patent/JP2000082671A/en
Publication of JP2000082671A publication Critical patent/JP2000082671A/en
Publication of JP2000082671A5 publication Critical patent/JP2000082671A5/ja
Pending legal-status Critical Current

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Claims (1)

上記ＧａＮ層の格子定数ａを、０．３１８０ｎｍ〜０．３１８３ｎｍの範囲内に形成することを特徴とする請求項６に記載の窒化物系III−Ｖ族化合物半導体装置の製造方法。 The method for manufacturing a nitride-based III-V compound semiconductor device according to claim 6, wherein the lattice constant a of the GaN layer is formed in the range of 0.3180 nm to 0.3183 nm.
JP10248709A 1998-06-26 1998-09-02 Nitride based iii-v compound semiconductor device and its manufacture Pending JP2000082671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10248709A JP2000082671A (en) 1998-06-26 1998-09-02 Nitride based iii-v compound semiconductor device and its manufacture

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP18080198 1998-06-26
JP10-180801 1998-06-26
JP10248709A JP2000082671A (en) 1998-06-26 1998-09-02 Nitride based iii-v compound semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JP2000082671A JP2000082671A (en) 2000-03-21
JP2000082671A5 true JP2000082671A5 (en) 2005-10-13

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JP10248709A Pending JP2000082671A (en) 1998-06-26 1998-09-02 Nitride based iii-v compound semiconductor device and its manufacture

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JP (1) JP2000082671A (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP4154558B2 (en) 2000-09-01 2008-09-24 日本電気株式会社 Semiconductor device
JP4804635B2 (en) * 2001-03-06 2011-11-02 古河電気工業株式会社 GaN-based field effect transistor
JP2002289528A (en) * 2001-03-23 2002-10-04 Yasuhiko Arakawa Method for epitaxially growing gallium nitride based compound semiconductor and electronic device comprising gallium nitride based compound semiconductor
JP3569807B2 (en) 2002-01-21 2004-09-29 松下電器産業株式会社 Method for manufacturing nitride semiconductor device
JP2004327882A (en) * 2003-04-28 2004-11-18 Ngk Insulators Ltd Epitaxial substrate, semiconductor device, and high electron-mobility transistor
EP1665358B1 (en) 2003-09-09 2020-07-01 The Regents of The University of California Fabrication of single or multiple gate field plates
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
JP4548117B2 (en) * 2004-12-28 2010-09-22 ソニー株式会社 Semiconductor light emitting device manufacturing method, integrated semiconductor light emitting device manufacturing method, image display device manufacturing method, and lighting device manufacturing method
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
JP2006344930A (en) * 2005-04-07 2006-12-21 Showa Denko Kk Manufacturing method of group iii nitride semiconductor device
US7405430B2 (en) * 2005-06-10 2008-07-29 Cree, Inc. Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
KR100809209B1 (en) * 2006-04-25 2008-02-29 삼성전기주식회사 METHOD OF GROWING NON-POLAR m-PLANE NITRIDE SEMICONDUCTOR
JP5105160B2 (en) 2006-11-13 2012-12-19 クリー インコーポレイテッド Transistor
JP5944301B2 (en) * 2012-11-19 2016-07-05 株式会社東芝 Manufacturing method of semiconductor light emitting device
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs

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