JP2002043618A5 - - Google Patents
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- JP2002043618A5 JP2002043618A5 JP2000220454A JP2000220454A JP2002043618A5 JP 2002043618 A5 JP2002043618 A5 JP 2002043618A5 JP 2000220454 A JP2000220454 A JP 2000220454A JP 2000220454 A JP2000220454 A JP 2000220454A JP 2002043618 A5 JP2002043618 A5 JP 2002043618A5
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- JP
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- barrier layer
- grown
- increased
- mqw
- growing
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【請求項１０】 前記第３の工程の少なくとも一部において、前記障壁層を成長させることを特徴とする請求項１から９までのいずれかに記載の窒化物半導体の製造方法。 10. The method according to claim 1, wherein the barrier layer is grown in at least a part of the third step.
請求項１０に記載の発明は、前記第３の工程の少なくとも一部において、前記障壁層を成長させることを特徴とする請求項１から９までのいずれかに記載の窒化物半導体の製造方法であり、降温時にも障壁層の一部を成長させることにより、特に障壁層を厚くする場合やＭＱＷの周期数を多くする場合でもＭＱＷの形成時間を短縮化することができ、ＭＱＷからなる窒化物半導体の製造コストを低減することできるという作用を有する。The invention according to claim 10 is the method according to claim 1, wherein the barrier layer is grown in at least a part of the third step. By growing a part of the barrier layer even when the temperature is lowered, the MQW formation time can be shortened even when the thickness of the barrier layer is increased or the number of MQW cycles is increased. This has the effect of reducing semiconductor manufacturing costs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000220454A JP4724901B2 (en) | 2000-07-21 | 2000-07-21 | Manufacturing method of nitride semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000220454A JP4724901B2 (en) | 2000-07-21 | 2000-07-21 | Manufacturing method of nitride semiconductor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002043618A JP2002043618A (en) | 2002-02-08 |
| JP2002043618A5 true JP2002043618A5 (en) | 2007-08-30 |
| JP4724901B2 JP4724901B2 (en) | 2011-07-13 |
Family
ID=18715063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000220454A Expired - Fee Related JP4724901B2 (en) | 2000-07-21 | 2000-07-21 | Manufacturing method of nitride semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4724901B2 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1474824B1 (en) | 2002-02-15 | 2016-02-10 | Toyoda Gosei Co.,Ltd. | Production method for group iii nitride semiconductor layer |
| CN100446281C (en) * | 2003-10-02 | 2008-12-24 | 昭和电工株式会社 | Nitride semiconductor, light-emitting device, light-emitting diode, laser device and lamp using the semiconductor, and production methods thereof |
| JP2005129923A (en) * | 2003-10-02 | 2005-05-19 | Showa Denko Kk | Nitride semiconductor, light emitting element using it, light emitting diode, laser element, lamp, and manufacturing method for those |
| GB2407701A (en) * | 2003-10-28 | 2005-05-04 | Sharp Kk | Manufacture of a semiconductor light-emitting device |
| JP4619647B2 (en) * | 2003-11-28 | 2011-01-26 | シャープ株式会社 | Method for manufacturing compound semiconductor device |
| JP4389723B2 (en) * | 2004-02-17 | 2009-12-24 | 住友電気工業株式会社 | Method for forming a semiconductor device |
| JP4617922B2 (en) * | 2005-02-25 | 2011-01-26 | ソニー株式会社 | Manufacturing method of semiconductor device |
| JP2006332258A (en) | 2005-05-25 | 2006-12-07 | Matsushita Electric Ind Co Ltd | Nitride semiconductor device and its manufacturing method |
| KR100833434B1 (en) * | 2006-06-30 | 2008-05-29 | 주식회사 하이닉스반도체 | Method of manufacturing a flash memory device |
| JP2010021290A (en) | 2008-07-09 | 2010-01-28 | Sumitomo Electric Ind Ltd | Method for manufacturing quantum well structure |
| JP4917585B2 (en) | 2008-08-26 | 2012-04-18 | 住友電気工業株式会社 | Method for manufacturing nitride-based semiconductor optical device and method for manufacturing epitaxial wafer |
| CN102138227A (en) | 2008-08-29 | 2011-07-27 | 株式会社东芝 | Semiconductor device |
| JP2010123920A (en) | 2008-10-20 | 2010-06-03 | Sumitomo Electric Ind Ltd | Method for manufacturing nitride semiconductor light emitting element, and method for manufacturing epitaxial wafer |
| JP5394717B2 (en) * | 2008-12-15 | 2014-01-22 | 日本オクラロ株式会社 | Manufacturing method of nitride semiconductor optical device |
| JP4987994B2 (en) | 2010-02-17 | 2012-08-01 | 株式会社東芝 | Method for crystal growth of nitride semiconductor |
| JP2015115343A (en) * | 2013-12-09 | 2015-06-22 | シャープ株式会社 | Method of manufacturing nitride semiconductor element |
| KR102408721B1 (en) | 2016-01-27 | 2022-06-15 | 삼성전자주식회사 | Method of fabricating semiconductor light emitting device |
| CN112768578A (en) * | 2021-02-07 | 2021-05-07 | 厦门乾照光电股份有限公司 | Semiconductor epitaxial structure, manufacturing method thereof and LED chip |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000049377A (en) * | 1998-07-30 | 2000-02-18 | Matsushita Electric Ind Co Ltd | Manufacture of gallium nitride compound semiconductor light-emitting device |
| JP2000077783A (en) * | 1998-08-27 | 2000-03-14 | Nec Corp | Growth method of indium-containing nitride semiconductor crystal |
-
2000
- 2000-07-21 JP JP2000220454A patent/JP4724901B2/en not_active Expired - Fee Related
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