WO2003026017A1 - Silicon cluster superlattice, method for preparing silicon cluster superlattice, method for preparing silicon cluster, silicon cluster superlattice structure, method for preparing silicon cluster superlattice structure, semiconductor device and quantum device - Google Patents

Silicon cluster superlattice, method for preparing silicon cluster superlattice, method for preparing silicon cluster, silicon cluster superlattice structure, method for preparing silicon cluster superlattice structure, semiconductor device and quantum device Download PDF

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Publication number
WO2003026017A1
WO2003026017A1 PCT/JP2002/009447 JP0209447W WO03026017A1 WO 2003026017 A1 WO2003026017 A1 WO 2003026017A1 JP 0209447 W JP0209447 W JP 0209447W WO 03026017 A1 WO03026017 A1 WO 03026017A1
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WO
WIPO (PCT)
Prior art keywords
silicon cluster
cluster superlattice
preparing
superlattice
preparing silicon
Prior art date
Application number
PCT/JP2002/009447
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichi Sato
Keisaku Kimura
Naoki Yamamoto
Original Assignee
The New Industry Research Organization
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The New Industry Research Organization filed Critical The New Industry Research Organization
Priority to JP2003529532A priority Critical patent/JPWO2003026017A1/en
Publication of WO2003026017A1 publication Critical patent/WO2003026017A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

A method for preparing a silicon cluster superlattice (10), which comprises dispersing silicon clusters (3a · 3b) comprising silicon in water (2), to allow silicon clusters (3a) having a same size to coagulate and self-organize to form cubic crystals. In the silicon cluster superlattice, a periodic and ordered structure is formed by silicon clusters (3a).
PCT/JP2002/009447 2001-09-14 2002-09-13 Silicon cluster superlattice, method for preparing silicon cluster superlattice, method for preparing silicon cluster, silicon cluster superlattice structure, method for preparing silicon cluster superlattice structure, semiconductor device and quantum device WO2003026017A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003529532A JPWO2003026017A1 (en) 2001-09-14 2002-09-13 Silicon cluster superlattice, silicon cluster superlattice manufacturing method, silicon cluster manufacturing method, silicon cluster superlattice structure, silicon cluster superlattice structure manufacturing method, semiconductor device, and quantum device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001280768 2001-09-14
JP2001-280768 2001-09-14

Publications (1)

Publication Number Publication Date
WO2003026017A1 true WO2003026017A1 (en) 2003-03-27

Family

ID=19104704

Family Applications (1)

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PCT/JP2002/009447 WO2003026017A1 (en) 2001-09-14 2002-09-13 Silicon cluster superlattice, method for preparing silicon cluster superlattice, method for preparing silicon cluster, silicon cluster superlattice structure, method for preparing silicon cluster superlattice structure, semiconductor device and quantum device

Country Status (2)

Country Link
JP (1) JPWO2003026017A1 (en)
WO (1) WO2003026017A1 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004331480A (en) * 2003-05-12 2004-11-25 Denki Kagaku Kogyo Kk SiOX PARTICLE, ITS PRODUCTION METHOD AND APPLICATION
JP2005089243A (en) * 2003-09-17 2005-04-07 Ishikawajima Harima Heavy Ind Co Ltd Clathrate compound, light emitting device, and method of producing clathrate compound
JP2005238380A (en) * 2004-02-26 2005-09-08 Vision Arts Kk Molecule fixed substrate using pseudo one-dimensional halogen cross-linking metal complex crystal
WO2005090234A1 (en) * 2004-03-17 2005-09-29 Denki Kagaku Kogyo Kabushiki Kaisha Silicon particle, silicon particle superlattice and method for production thereof
JP2005314408A (en) * 2004-03-31 2005-11-10 Shiseido Co Ltd Ultraviolet light absorber and luminescent agent containing silicon cluster or germanium cluster, and skin care preparation for external use, using the same cluster
JPWO2013027717A1 (en) * 2011-08-24 2015-03-19 株式会社村田製作所 SOLAR CELL AND METHOD FOR PRODUCING THE SOLAR CELL
WO2017130974A1 (en) * 2016-01-26 2017-08-03 国立研究開発法人産業技術総合研究所 Silicon cluster superlattice

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065840A (en) * 1992-06-23 1994-01-14 Sony Corp Pseudomolecular crystal, its manufacture and its manufacturing apparatus
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US6027666A (en) * 1998-06-05 2000-02-22 The Governing Council Of The University Of Toronto Fast luminescent silicon
JP2000084474A (en) * 1998-09-16 2000-03-28 Mitsubishi Chemicals Corp Production of nano-particle membrane

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065840A (en) * 1992-06-23 1994-01-14 Sony Corp Pseudomolecular crystal, its manufacture and its manufacturing apparatus
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US6027666A (en) * 1998-06-05 2000-02-22 The Governing Council Of The University Of Toronto Fast luminescent silicon
JP2000084474A (en) * 1998-09-16 2000-03-28 Mitsubishi Chemicals Corp Production of nano-particle membrane

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KIMURA HITOSHI ET AL.: "The electronic structure of one-dimensional(1-D), 2-D and 3-D silicon clusters", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 62, no. 8, August 1993 (1993-08-01), pages 2663 - 2668, XP002960799 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004331480A (en) * 2003-05-12 2004-11-25 Denki Kagaku Kogyo Kk SiOX PARTICLE, ITS PRODUCTION METHOD AND APPLICATION
JP2005089243A (en) * 2003-09-17 2005-04-07 Ishikawajima Harima Heavy Ind Co Ltd Clathrate compound, light emitting device, and method of producing clathrate compound
JP4493960B2 (en) * 2003-09-17 2010-06-30 株式会社Ｉｈｉ Clathrate compound, light emitting device, and method for producing clathrate compound
JP2005238380A (en) * 2004-02-26 2005-09-08 Vision Arts Kk Molecule fixed substrate using pseudo one-dimensional halogen cross-linking metal complex crystal
JP4636466B2 (en) * 2004-02-26 2011-02-23 ヴィジョンアーツ株式会社 Method of immobilizing molecules on a substrate
WO2005090234A1 (en) * 2004-03-17 2005-09-29 Denki Kagaku Kogyo Kabushiki Kaisha Silicon particle, silicon particle superlattice and method for production thereof
US7850938B2 (en) 2004-03-17 2010-12-14 Denki Kagaku Kogyo Kabushiki Kaisha Silicon particles, silicon particle superlattice and method for producing the same
US8221881B2 (en) 2004-03-17 2012-07-17 Denki Kagaku Kogyo Kabushiki Kaisha Silicon particle, silicon particle superlattice and method for producing the same
JP2005314408A (en) * 2004-03-31 2005-11-10 Shiseido Co Ltd Ultraviolet light absorber and luminescent agent containing silicon cluster or germanium cluster, and skin care preparation for external use, using the same cluster
JPWO2013027717A1 (en) * 2011-08-24 2015-03-19 株式会社村田製作所 SOLAR CELL AND METHOD FOR PRODUCING THE SOLAR CELL
US9496434B2 (en) 2011-08-24 2016-11-15 Murata Manufacturing Co., Ltd. Solar cell and method for producing solar cell
WO2017130974A1 (en) * 2016-01-26 2017-08-03 国立研究開発法人産業技術総合研究所 Silicon cluster superlattice

Also Published As

Publication number Publication date
JPWO2003026017A1 (en) 2005-01-06

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