JP4636466B2 - Method of immobilizing molecules on a substrate - Google Patents
Method of immobilizing molecules on a substrate Download PDFInfo
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- JP4636466B2 JP4636466B2 JP2004050964A JP2004050964A JP4636466B2 JP 4636466 B2 JP4636466 B2 JP 4636466B2 JP 2004050964 A JP2004050964 A JP 2004050964A JP 2004050964 A JP2004050964 A JP 2004050964A JP 4636466 B2 JP4636466 B2 JP 4636466B2
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- 239000000758 substrate Substances 0.000 title claims description 55
- 238000000034 method Methods 0.000 title claims description 17
- 230000003100 immobilizing effect Effects 0.000 title claims description 11
- 239000013078 crystal Substances 0.000 claims description 26
- 150000004696 coordination complex Chemical class 0.000 claims description 14
- 230000000737 periodic effect Effects 0.000 claims description 9
- SSJXIUAHEKJCMH-PHDIDXHHSA-N (1r,2r)-cyclohexane-1,2-diamine Chemical compound N[C@@H]1CCCC[C@H]1N SSJXIUAHEKJCMH-PHDIDXHHSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 33
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 24
- 229910052759 nickel Inorganic materials 0.000 description 11
- 230000005641 tunneling Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910052763 palladium Inorganic materials 0.000 description 10
- 239000000126 substance Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical compound BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910015468 Ni1-xCox Inorganic materials 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004574 scanning tunneling microscopy Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000005493 condensed matter Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- YMHQVDAATAEZLO-UHFFFAOYSA-N cyclohexane-1,1-diamine Chemical compound NC1(N)CCCCC1 YMHQVDAATAEZLO-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 halogen chain compound Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
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Description
本発明は、分子の配列をナノメートルスケールで制御して固定するための基板として、擬一次元ハロゲン架橋金属錯体結晶を用いる方法に関し、ナノテクノロジーにおいて基板上に分子を配列させるための技術として応用されるものであり、分子デバイス構築のための基盤技術となる。 The present invention relates to a method using a quasi-one-dimensional halogen-bridged metal complex crystal as a substrate for controlling and fixing a molecular arrangement on a nanometer scale, and is applied as a technique for arranging molecules on a substrate in nanotechnology. It becomes a fundamental technology for building molecular devices.
近年ナノメートルスケールで基板上に分子配列を制御する技術（ナノテクノロジー）が注目されている。現在、基板として用いられている化合物に高配向焼結グラファイト(HOPG)、二硫化モリブデン(MoS2)などがある（例えば非特許文献１、２参照）。これらの技術は基盤と分子の間に働く分子間力（ファンデルワールス力）を利用して分子を基板上に固定している。
In recent years, a technology (nanotechnology) for controlling molecular arrangement on a substrate on a nanometer scale has attracted attention. Currently, compounds used as substrates include highly oriented sintered graphite (HOPG), molybdenum disulfide (MoS 2 ), and the like (see, for example, Non-Patent
また、金結晶薄膜上にアルカンチオールを吸着させることにより自己組織化単分子膜を作製することが可能になっている（例えば非特許文献３、４参照）。この方法はアルカンチオールと金との間の結合力（20-50 kcal mol-1）を利用して、吸着したチオール分子が脱着することなく、表面を移動することができるという化学的性質を利用している。 In addition, it is possible to produce a self-assembled monomolecular film by adsorbing alkanethiol on a gold crystal thin film (for example, see Non-Patent Documents 3 and 4). This method uses the chemical property that the adsorbed thiol molecule can move on the surface without desorption using the bonding force (20-50 kcal mol -1 ) between alkanethiol and gold. is doing.
しかしこれらの基板では、表面の化学的性質や格子間隔を自由に制御する事は困難である。 However, with these substrates, it is difficult to freely control the surface chemical properties and lattice spacing.
本出願に関連する先行技術文献情報としては次のものがある。
従来の基板を用いて分子を固定する場合、基板表面が不活性なため、分子の配列を制御することは非常に困難である。我々は本発明において、基板と分子との親水的、あるいは疎水的相互作用を利用することにより、分子の配列を制御すること、および配列した分子を走査トンネル顕微鏡によって観測することを課題としている。このような課題を解決するための必要条件は（１）基板の清浄表面がえられること、（２）基板の電気抵抗がある程度小さい(106 Ω cm以下)こと、（３）基板分子において親水性官能基と疎水性官能基とが規則的に配列していることが挙げられるが、現在までこれらの条件を満たす基板は皆無であった。 When molecules are immobilized using a conventional substrate, it is very difficult to control the molecular arrangement because the substrate surface is inactive. In the present invention, an object is to control the arrangement of molecules by utilizing the hydrophilic or hydrophobic interaction between the substrate and the molecules, and to observe the arranged molecules with a scanning tunneling microscope. Necessary conditions for solving such problems are (1) that a clean surface of the substrate is obtained, (2) that the electrical resistance of the substrate is somewhat small (10 6 Ωcm or less), and (3) that the substrate molecule is hydrophilic. The functional functional group and the hydrophobic functional group are regularly arranged, but until now there has been no substrate that satisfies these conditions.
我々はハロゲン架橋Ni,Pd錯体において初めてこれらの条件を解決することができ、基板として用いることにより分子を規則的に配列させ、それを走査トンネル顕微鏡によって観測することが可能であることを見出した。 We have found that these conditions can be solved for the first time in a halogen-bridged Ni, Pd complex, and that the molecules can be regularly arranged and observed with a scanning tunneling microscope when used as a substrate. .
我々は最近、ハロゲン架橋Ni,Pd錯体を走査トンネル顕微鏡により観測することに成功した。これらの錯体はNiとBrがなす疎水的部分とNH-Brがなす親水的部分からなる。 We recently succeeded in observing halogen-bridged Ni and Pd complexes with a scanning tunneling microscope. These complexes consist of a hydrophobic part formed by Ni and Br and a hydrophilic part formed by NH-Br.
これらの錯体の疎水的、親水的相互作用および格子間隔を用いることによって、特定の分子を規則的に配列させることが可能となる。 By using the hydrophobic and hydrophilic interactions and lattice spacing of these complexes, it is possible to arrange specific molecules regularly.
請求項１に係る発明は、分子の周期間隔を制御して固定するための基板として擬一次元ハロゲン架橋金属錯体結晶を利用する、基板に分子を固定する方法であって、[M(chxn) 2 Br]Br 2 を劈開して得たｂｃ軸表面を基板表面とし、当該基板表面の結晶構造の周期を利用することによって、前記基板に固定される分子の周期間隔が制御される、基板に分子を固定する方法である。
The invention according to
請求項２に係る発明は、請求項１において、擬一次元ハロゲン架橋Ni錯体およびPd錯体を基板として用いる、基板に分子を固定する方法である。
The invention according to
請求項３に係る発明は、請求項２において、擬一次元ハロゲン架橋金属錯体[Ni(chxn)2Br]Br2、[Pd(chxn)2Br]Br2、または[Ni1-xPdx(chxn)2Br]Br2(0<x<1) (chxn: 1R, 2R- diaminocyclohexane) を基板として用いる、基板に分子を固定する方法である。
The invention according to claim 3, in
請求項４に係る発明は、請求項２において、擬一次元ハロゲン架橋混合金属錯体[Ni1-xCox(chxn)2Br]Br2(chxn: 1R, 2R- diaminocyclohexane) を基板として用いる、基板に分子を固定する方法である。
The invention according to claim 4, in
これらの発明により、前述した課題を解決しようとするものである。 These inventions are intended to solve the aforementioned problems.
擬一次元ハロゲン架橋金属錯体の疎水的、親水的相互作用および格子間隔を用いることによって、特定の分子を規則的に配列させることが可能となる。 By using the hydrophobic and hydrophilic interactions and lattice spacing of the quasi-one-dimensional halogen-bridged metal complex, it becomes possible to regularly arrange specific molecules.
図１にハロゲン架橋錯体結晶の代表例として、[M(chxn)2Br]Br2 (M = Ni, Pd, Co, chxn: 1R, 2R- diaminocyclohexane)の結晶構造の模式図を示す。図１における（ａ）はハロゲン架橋錯体[M(chxn)2Br]Br2 (M = Ni, Pd, Co, chxn: 1R, 2R- diaminocyclohexane)のユニットとなる分子の構造式である。そして図１における（ｂ）は、（ａ）に示した分子をハロゲン架橋して得られる結晶の立体構造模式図である。この結晶は、Ni原子1個にdiaminocyclohexane分子が上下に２個配位結合したものをユニットとして、このユニットがBr(臭素)などのハロゲン原子によってｂ軸方向に一次元的に架橋されており、またｃ軸方向にはその一次元的に架橋されて形成された鎖間の相互作用による結合が形成されている。これに対してａ軸方向は弱い分子間力相互作用によって繋がっている。このため、この結晶を劈開することによって、ｂｃ面の清浄表面が容易に得られる。図１における（ｃ）は、（ｂ）に示した結晶の劈開によって得られるｂｃ面の清浄表面の構造模式図である。 FIG. 1 shows a schematic diagram of the crystal structure of [M (chxn) 2 Br] Br 2 (M = Ni, Pd, Co, chxn: 1R, 2R-diaminocyclohexane) as a representative example of a halogen-bridged complex crystal. (A) in FIG. 1 is a structural formula of a molecule serving as a unit of a halogen-bridged complex [M (chxn) 2 Br] Br 2 (M = Ni, Pd, Co, chxn: 1R, 2R-diaminocyclohexane). FIG. 1B is a schematic diagram of a three-dimensional structure of a crystal obtained by halogen-crosslinking the molecule shown in FIG. This crystal is a unit in which two diaminocyclohexane molecules are coordinated to the top and bottom of one Ni atom, and this unit is one-dimensionally crosslinked in the b-axis direction by a halogen atom such as Br (bromine). In the c-axis direction, a bond is formed by the interaction between the chains formed by one-dimensional crosslinking. On the other hand, the a-axis direction is connected by weak intermolecular force interaction. For this reason, a cleaved surface of the bc plane can be easily obtained by cleaving the crystal. (C) in FIG. 1 is a structural schematic diagram of the clean surface of the bc plane obtained by cleaving the crystal shown in (b).
擬一次元ハロゲン架橋Ni錯体 [Ni(chxn)2Br]Br2の場合には金属間距離はｂ軸（鎖内）で約0.52 nm、ｃ軸（鎖間）で0.71 nmである。これらの距離はNiの代わりに一部を他の金属、例えばPdやCoに置き換えることによって変化させることが可能となる。具体的には[Ni1-xPdx(chxn)2Br]Br2擬一次元ハロゲン架橋Ni錯体において組成比ｘを０から１の間で変化させることにより、ｂ軸を0.517 nmから0.528 nmまで、またｃ軸を0.712 nmから0.707 nmまで変化させることができる（例えば非特許文献５参照）。 In the case of the quasi-one-dimensional halogen-bridged Ni complex [Ni (chxn) 2 Br] Br 2 , the distance between metals is about 0.52 nm on the b-axis (intrachain) and 0.71 nm on the c-axis (interchain). These distances can be changed by replacing part of the distance with another metal such as Pd or Co instead of Ni. Specifically, by changing the composition ratio x between 0 and 1 in a [Ni 1-x Pd x (chxn) 2 Br] Br 2 quasi-one-dimensional halogen-bridged Ni complex, the b-axis is changed from 0.517 nm to 0.528 nm. And the c-axis can be changed from 0.712 nm to 0.707 nm (for example, see Non-Patent Document 5).
従って、図２に示すように、擬一次元ハロゲン架橋錯体結晶を劈開して得られたｂｃ軸表面を基板としてその表面上に様々な分子や材料を基板表面に並べることによって、これらの分子や材料の周期間隔を制御することができる。すなわち、本発明により、新物質や新規機能性材料を創製するために有効な基板が提供される事となる。 Therefore, as shown in FIG. 2, by arranging the bc-axis surface obtained by cleaving the quasi-one-dimensional halogen-bridged complex crystal as a substrate, and arranging various molecules and materials on the surface, these molecules and The period interval of the material can be controlled. That is, according to the present invention, an effective substrate for creating a new substance or a new functional material is provided.
擬一次元ハロゲン架橋金属錯体[Ni(chxn)2Br]Br2結晶は、Ni錯体[Ni(chxn)2]Br2を無水メタノールに溶かして作製した溶液にTetra-n-butylammonium bromideを支持電解質として加え、電解酸化することによって電極に析出させることによって得られる。数mmの結晶を得るためには、１週間から２ヶ月程度の時間をかけて電解酸化を行っている。図３に、擬一次元ハロゲン架橋金属錯体[Ni(chxn)2Br]Br2を劈開して得たｂｃ軸表面を走査トンネル顕微鏡で観察した像を示す。ｂ軸の周期0.517 nmとｃ軸の周期0.712 nmに対応する周期構造が観察されている。このように劈開によって原子スケールで平坦かつ清浄な基板表面を得ることができることが実証された。 The quasi-one-dimensional halogen-bridged metal complex [Ni (chxn) 2 Br] Br 2 crystal is supported by Tetra-n-butylammonium bromide in a solution prepared by dissolving the Ni complex [Ni (chxn) 2 ] Br 2 in anhydrous methanol. In addition, it is obtained by depositing on an electrode by electrolytic oxidation. In order to obtain a crystal of several mm, electrolytic oxidation is performed over a period of about 1 week to 2 months. FIG. 3 shows an image obtained by observing the bc-axis surface obtained by cleaving the quasi-one-dimensional halogen-bridged metal complex [Ni (chxn) 2 Br] Br 2 with a scanning tunneling microscope. Periodic structures corresponding to a b-axis period of 0.517 nm and a c-axis period of 0.712 nm have been observed. Thus, it was proved that a flat and clean substrate surface on an atomic scale can be obtained by cleavage.
次に、擬一次元ハロゲン架橋金属錯体[Pd(chxn)2Br]Br2結晶は、Pd錯体[Pdchxn)2]Br2を、上記のNi錯体のときと同様な方法によって得られる。図４に擬一次元ハロゲン架橋金属錯体[Pd(chxn)2Br]Br2を劈開して得たｂｃ軸表面を走査トンネル顕微鏡で観察した像を示す。ｂ軸の周期0.528 nmとｃ軸の周期0.707 nmに対応する周期構造が観察されている。このようにPd錯体の場合においてもNi錯体のときと同様に、劈開によって原子スケールで平坦かつ清浄な基板表面を得ることができることが実証された。 Next, the quasi-one-dimensional halogen-bridged metal complex [Pd (chxn) 2 Br] Br 2 crystal is obtained from the Pd complex [Pdchxn) 2 ] Br 2 by the same method as in the case of the Ni complex. FIG. 4 shows an image obtained by observing the bc-axis surface obtained by cleaving the quasi-one-dimensional halogen-bridged metal complex [Pd (chxn) 2 Br] Br 2 with a scanning tunneling microscope. Periodic structures corresponding to a b-axis period of 0.528 nm and a c-axis period of 0.707 nm have been observed. Thus, in the case of the Pd complex as well as in the case of the Ni complex, it was demonstrated that a flat and clean substrate surface on the atomic scale can be obtained by cleavage.
最後に、混合擬一次元ハロゲン架橋金属錯体[Ni1-xPdx(chxn)2Br]Br2 (0<x<1)の結晶は、Ni錯体[Ni(chxn)2]Br2とPd錯体[Pd(chxn)2]Br2を混ぜて無水メタノールに溶かして作製した混合溶液を上記と電解酸化によって得られる。図５における（ａ）は、組成比が0.08のときの結晶を劈開して得たｂｃ軸表面を走査トンネル顕微鏡で観察した像である。図５における（ｂ）は、組成比が0.40のときの結晶を劈開して得たｂｃ軸表面を走査トンネル顕微鏡で観察した像である。図５における（ｃ）は、組成比が0.76のときの結晶を劈開して得たｂｃ軸表面を走査トンネル顕微鏡で観察した像である。このようにNiとPdの混合錯体の場合においても、NiやPdの錯体のときと同様に、劈開によって原子スケールで平坦かつ清浄な基板表面を得ることができることが実証された。 Finally, the crystals of the mixed quasi-one-dimensional halogen-bridged metal complex [Ni 1-x Pd x (chxn) 2 Br] Br 2 (0 <x <1) are converted to the Ni complex [Ni (chxn) 2 ] Br 2 and Pd A mixed solution prepared by mixing the complex [Pd (chxn) 2 ] Br 2 and dissolving in anhydrous methanol is obtained by the above and electrolytic oxidation. (A) in FIG. 5 is an image obtained by observing the bc-axis surface obtained by cleaving the crystal when the composition ratio is 0.08 with a scanning tunneling microscope. (B) in FIG. 5 is an image obtained by observing the bc-axis surface obtained by cleaving the crystal when the composition ratio is 0.40 with a scanning tunneling microscope. (C) in FIG. 5 is an image obtained by observing the bc-axis surface obtained by cleaving the crystal when the composition ratio is 0.76 with a scanning tunneling microscope. Thus, in the case of a mixed complex of Ni and Pd, it was proved that a flat and clean substrate surface on the atomic scale can be obtained by cleavage, as in the case of a complex of Ni or Pd.
また、Coを用いた混合擬一次元ハロゲン架橋金属錯体[Ni1-xCox(chxn)2Br]Br2 (0<x<1) （例えば非特許文献６参照）の場合についても、ここでは像を示さないが上記と同様な方法で基板表面を得ることが可能である。 Further, the case of a mixed quasi-one-dimensional halogen-bridged metal complex [Ni 1-x Co x (chxn) 2 Br] Br 2 (0 <x <1) (for example, see Non-Patent Document 6) using Co is also used here. Then, although no image is shown, it is possible to obtain the substrate surface by the same method as described above.
本発明で、擬一次元ハロゲン架橋錯体結晶基板のｂ軸において得られる約0.5 nmの周期は、有機分子を並べるときに生じる共通周期であることが知られており（例えば非特許文献７参照）、この周期を利用することによって様々な分子の周期間隔を制御して並べることが可能となる。 In the present invention, it is known that the period of about 0.5 nm obtained on the b-axis of the quasi-one-dimensional halogen-bridged complex crystal substrate is a common period that occurs when organic molecules are arranged (see, for example, Non-Patent Document 7). By using this period, it is possible to control and arrange the periodic intervals of various molecules.
また、新規機能性材料として期待されているカーボンナノチューブの直径は代表的なもので0.5 nmであり、本発明における基板のｂ軸において得られる約0.5 nmの周期とほぼ一致する。このことを利用して、カーボンナノチューブを本発明の基板表面に揃えて並べることにより、新規材料への応用も考えられる。 The diameter of carbon nanotubes expected as a new functional material is typically 0.5 nm, which is almost the same as the period of about 0.5 nm obtained on the b-axis of the substrate in the present invention. Utilizing this fact, the carbon nanotubes are aligned on the surface of the substrate of the present invention, so that application to new materials is also conceivable.
さらに他の例を挙げると、青色発光ダイオードの材料として知られているGaNの結晶のｃ軸周期は0.517 nmであるが（例えば非特許文献８参照）、GaNのナノリボンになるとこの周期が0.518 nmになることが報告されている（例えば非特許文献９参照）。つまり、GaNのｃ軸周期間隔の制御により、GaNの構造や性質を制御することも可能である。 As another example, the c-axis period of a GaN crystal known as a blue light emitting diode material is 0.517 nm (see, for example, Non-Patent Document 8). (For example, refer nonpatent literature 9). That is, the structure and properties of GaN can be controlled by controlling the c-axis periodic interval of GaN.
従って、図２に示すように、本発明で示した擬一次元ハロゲン架橋錯体を基板として様々な分子や材料を基板表面に並べることによって、これらの分子や材料の周期間隔を制御することができる。すなわち、本発明により、新物質や新規機能性材料を創製するために有効な基板が提供される事となる。 Therefore, as shown in FIG. 2, by arranging various molecules and materials on the substrate surface using the quasi-one-dimensional halogen bridge complex shown in the present invention as a substrate, the periodic interval of these molecules and materials can be controlled. . That is, according to the present invention, an effective substrate for creating a new substance or a new functional material is provided.
１ 擬一次元ハロゲン架橋錯体基板
２ 基板上に配列した分子
1 Quasi-one-dimensional halogen-bridged
Claims (4)
[M(chxn)2Br]Br2を劈開して得たｂｃ軸表面を基板表面とし、当該基板表面の結晶構造の周期を利用することによって、前記基板に固定される分子の周期間隔が制御される、基板に分子を固定する方法。 A method of immobilizing molecules on a substrate using a quasi-one-dimensional halogen-bridged metal complex crystal as a substrate for immobilizing by controlling the periodic interval of molecules,
By using the bc-axis surface obtained by cleaving [M (chxn) 2 Br] Br 2 as the substrate surface and utilizing the period of the crystal structure of the substrate surface, the periodic interval of molecules immobilized on the substrate is controlled. A method of immobilizing molecules on a substrate.
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