JPH10233529A5 - - Google Patents

Info

Publication number
JPH10233529A5
JPH10233529A5 JP1997030204A JP3020497A JPH10233529A5 JP H10233529 A5 JPH10233529 A5 JP H10233529A5 JP 1997030204 A JP1997030204 A JP 1997030204A JP 3020497 A JP3020497 A JP 3020497A JP H10233529 A5 JPH10233529 A5 JP H10233529A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
semiconductor device
electrode
manufacturing
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997030204A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10233529A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP3020497A priority Critical patent/JPH10233529A/ja
Priority claimed from JP3020497A external-priority patent/JPH10233529A/ja
Priority to US09/021,053 priority patent/US6239490B1/en
Publication of JPH10233529A publication Critical patent/JPH10233529A/ja
Publication of JPH10233529A5 publication Critical patent/JPH10233529A5/ja
Pending legal-status Critical Current

Links

JP3020497A 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法 Pending JPH10233529A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3020497A JPH10233529A (ja) 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法
US09/021,053 US6239490B1 (en) 1997-02-14 1998-02-09 P-contact for a Group III-nitride semiconductor device and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3020497A JPH10233529A (ja) 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法

Publications (2)

Publication Number Publication Date
JPH10233529A JPH10233529A (ja) 1998-09-02
JPH10233529A5 true JPH10233529A5 (enExample) 2005-01-06

Family

ID=12297217

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3020497A Pending JPH10233529A (ja) 1997-02-14 1997-02-14 窒化物半導体素子およびその製造方法

Country Status (2)

Country Link
US (1) US6239490B1 (enExample)
JP (1) JPH10233529A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291840B1 (en) 1996-11-29 2001-09-18 Toyoda Gosei Co., Ltd. GaN related compound semiconductor light-emitting device
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
EP1115161A4 (en) * 1998-09-18 2001-12-05 Mitsubishi Cable Ind Ltd SEMICONDUCTOR PHOTODETECTOR
TW386286B (en) 1998-10-26 2000-04-01 Ind Tech Res Inst An ohmic contact of semiconductor and the manufacturing method
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6774449B1 (en) * 1999-09-16 2004-08-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6586328B1 (en) * 2000-06-05 2003-07-01 The Board Of Trustees Of The University Of Illinois Method to metallize ohmic electrodes to P-type group III nitrides
JP2002299687A (ja) * 2001-04-02 2002-10-11 Nagoya Kogyo Univ 窒化ガリウム系化合物半導体層のｐ型電極形成方法
US7141828B2 (en) * 2003-03-19 2006-11-28 Gelcore, Llc Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact
US20040191330A1 (en) * 2003-03-31 2004-09-30 Keefe Candace R. Daily skin care regimen
KR101034055B1 (ko) * 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
KR20050042715A (ko) * 2003-11-04 2005-05-10 삼성전자주식회사 전극 구조체, 이를 구비하는 반도체 발광 소자 및 그제조방법
TW200529464A (en) * 2004-02-27 2005-09-01 Super Nova Optoelectronics Corp Gallium nitride based light-emitting diode structure and manufacturing method thereof
US7022550B2 (en) * 2004-04-07 2006-04-04 Gelcore Llc Methods for forming aluminum-containing p-contacts for group III-nitride light emitting diodes
KR100576776B1 (ko) * 2004-12-09 2006-05-08 한국전자통신연구원 반도체 광소자의 제작 방법
JP4639107B2 (ja) * 2005-03-31 2011-02-23 富士通株式会社 半導体レーザ及びその製造方法
JP4536568B2 (ja) * 2005-03-31 2010-09-01 住友電工デバイス・イノベーション株式会社 Ｆｅｔの製造方法
JP4101823B2 (ja) * 2005-06-13 2008-06-18 株式会社東芝 半導体素子、電極形成方法及び半導体素子の製造方法
JP2010509778A (ja) * 2006-11-10 2010-03-25 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド サセプタおよびサセプタを用いたｌｅｄ装置の形成方法
DE102016125857B4 (de) 2016-12-29 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode
DE102017103789B4 (de) * 2017-02-23 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832115A (ja) * 1994-07-19 1996-02-02 Sharp Corp 電極構造およびその製造方法
JP3461074B2 (ja) * 1995-12-12 2003-10-27 パイオニア株式会社 Ｉｉｉ族窒化物半導体発光素子製造方法
US5923690A (en) * 1996-01-25 1999-07-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
US5776623A (en) * 1996-07-29 1998-07-07 Eastman Kodak Company Transparent electron-injecting electrode for use in an electroluminescent device

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