JPH11298040A5 - - Google Patents

Info

Publication number
JPH11298040A5
JPH11298040A5 JP1998098839A JP9883998A JPH11298040A5 JP H11298040 A5 JPH11298040 A5 JP H11298040A5 JP 1998098839 A JP1998098839 A JP 1998098839A JP 9883998 A JP9883998 A JP 9883998A JP H11298040 A5 JPH11298040 A5 JP H11298040A5
Authority
JP
Japan
Prior art keywords
conductive film
film containing
metal film
ohmic electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998098839A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11298040A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9883998A priority Critical patent/JPH11298040A/ja
Priority claimed from JP9883998A external-priority patent/JPH11298040A/ja
Publication of JPH11298040A publication Critical patent/JPH11298040A/ja
Publication of JPH11298040A5 publication Critical patent/JPH11298040A5/ja
Pending legal-status Critical Current

Links

JP9883998A 1998-04-10 1998-04-10 半導体発光素子及びその製造方法 Pending JPH11298040A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9883998A JPH11298040A (ja) 1998-04-10 1998-04-10 半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9883998A JPH11298040A (ja) 1998-04-10 1998-04-10 半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11298040A JPH11298040A (ja) 1999-10-29
JPH11298040A5 true JPH11298040A5 (enExample) 2005-08-11

Family

ID=14230442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9883998A Pending JPH11298040A (ja) 1998-04-10 1998-04-10 半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPH11298040A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024994B2 (ja) 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
JP5283293B2 (ja) * 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP2002353570A (ja) * 2001-05-29 2002-12-06 Sharp Corp Ｉｉｉ族窒化物系化合物半導体装置及びその製造方法
JP3795007B2 (ja) 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
CN100383987C (zh) * 2003-09-10 2008-04-23 深圳市方大国科光电技术有限公司 蓝宝石衬底发光二极管芯片电极制作方法
EP2201613A1 (en) * 2007-08-31 2010-06-30 Lattice Power (Jiangxi) Corporation Method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semiconductor material at low temperature
JP4952534B2 (ja) 2007-11-20 2012-06-13 三菱電機株式会社 窒化物半導体発光素子の製造方法
JP5258272B2 (ja) * 2007-11-30 2013-08-07 三菱電機株式会社 窒化物半導体装置およびその製造方法
JP5258275B2 (ja) * 2007-12-07 2013-08-07 三菱電機株式会社 窒化物半導体装置およびその製造方法
JPWO2010032829A1 (ja) * 2008-09-19 2012-02-16 三菱化学株式会社 半導体発光素子の製造方法および半導体発光素子

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