JPH11298040A - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法

Info

Publication number
JPH11298040A
JPH11298040A JP9883998A JP9883998A JPH11298040A JP H11298040 A JPH11298040 A JP H11298040A JP 9883998 A JP9883998 A JP 9883998A JP 9883998 A JP9883998 A JP 9883998A JP H11298040 A JPH11298040 A JP H11298040A
Authority
JP
Japan
Prior art keywords
electrode
film
semiconductor
dielectric film
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9883998A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11298040A5 (enExample
Inventor
Takeshi Kamikawa
剛 神川
Shigetoshi Ito
茂稔 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9883998A priority Critical patent/JPH11298040A/ja
Publication of JPH11298040A publication Critical patent/JPH11298040A/ja
Publication of JPH11298040A5 publication Critical patent/JPH11298040A5/ja
Pending legal-status Critical Current

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  • Led Devices (AREA)
JP9883998A 1998-04-10 1998-04-10 半導体発光素子及びその製造方法 Pending JPH11298040A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9883998A JPH11298040A (ja) 1998-04-10 1998-04-10 半導体発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9883998A JPH11298040A (ja) 1998-04-10 1998-04-10 半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JPH11298040A true JPH11298040A (ja) 1999-10-29
JPH11298040A5 JPH11298040A5 (enExample) 2005-08-11

Family

ID=14230442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9883998A Pending JPH11298040A (ja) 1998-04-10 1998-04-10 半導体発光素子及びその製造方法

Country Status (1)

Country Link
JP (1) JPH11298040A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353570A (ja) * 2001-05-29 2002-12-06 Sharp Corp Ｉｉｉ族窒化物系化合物半導体装置及びその製造方法
US6825502B2 (en) 2000-06-30 2004-11-30 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
US7173277B2 (en) 2002-11-27 2007-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method for fabricating the same
CN100383987C (zh) * 2003-09-10 2008-04-23 深圳市方大国科光电技术有限公司 蓝宝石衬底发光二极管芯片电极制作方法
EP1294028A4 (en) * 2001-02-21 2009-04-01 Sony Corp LIGHT-EMITTING SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT AND ELECTRODE LAYER CONNECTION STRUCTURE
JP2009135251A (ja) * 2007-11-30 2009-06-18 Mitsubishi Electric Corp 窒化物半導体装置およびその製造方法
JP2009141195A (ja) * 2007-12-07 2009-06-25 Mitsubishi Electric Corp 窒化物半導体装置およびその製造方法
WO2010032829A1 (ja) * 2008-09-19 2010-03-25 三菱化学株式会社 半導体発光素子の製造方法および半導体発光素子
JP2010537436A (ja) * 2007-08-31 2010-12-02 ラティス パワー （チアンシ） コーポレイション 低温でｐ型ＩＩＩ−Ｖ窒化物半導体材料に低抵抗率オーム接点を製作する方法
US7964424B2 (en) 2007-11-20 2011-06-21 Mitsubishi Electric Corporation Method for manufacturing nitride semiconductor light-emitting element

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7355212B2 (en) 2000-06-30 2008-04-08 Kabushiki Kaisha Toshiba Light emitting element
US7221002B2 (en) 2000-06-30 2007-05-22 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
US7135714B2 (en) 2000-06-30 2006-11-14 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
US7138665B2 (en) 2000-06-30 2006-11-21 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
US7138664B2 (en) 2000-06-30 2006-11-21 Kabushiki Kaisha Toshiba Semiconductor device having a light emitting element
US7179671B2 (en) 2000-06-30 2007-02-20 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
US6825502B2 (en) 2000-06-30 2004-11-30 Kabushiki Kaisha Toshiba Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element
EP1294028A4 (en) * 2001-02-21 2009-04-01 Sony Corp LIGHT-EMITTING SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT AND ELECTRODE LAYER CONNECTION STRUCTURE
JP2002353570A (ja) * 2001-05-29 2002-12-06 Sharp Corp Ｉｉｉ族窒化物系化合物半導体装置及びその製造方法
US7173277B2 (en) 2002-11-27 2007-02-06 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method for fabricating the same
CN100383987C (zh) * 2003-09-10 2008-04-23 深圳市方大国科光电技术有限公司 蓝宝石衬底发光二极管芯片电极制作方法
JP2010537436A (ja) * 2007-08-31 2010-12-02 ラティス パワー （チアンシ） コーポレイション 低温でｐ型ＩＩＩ−Ｖ窒化物半導体材料に低抵抗率オーム接点を製作する方法
US7964424B2 (en) 2007-11-20 2011-06-21 Mitsubishi Electric Corporation Method for manufacturing nitride semiconductor light-emitting element
JP2009135251A (ja) * 2007-11-30 2009-06-18 Mitsubishi Electric Corp 窒化物半導体装置およびその製造方法
JP2009141195A (ja) * 2007-12-07 2009-06-25 Mitsubishi Electric Corp 窒化物半導体装置およびその製造方法
WO2010032829A1 (ja) * 2008-09-19 2010-03-25 三菱化学株式会社 半導体発光素子の製造方法および半導体発光素子

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