JP2009524231A5 - - Google Patents

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Publication number
JP2009524231A5
JP2009524231A5 JP2008550830A JP2008550830A JP2009524231A5 JP 2009524231 A5 JP2009524231 A5 JP 2009524231A5 JP 2008550830 A JP2008550830 A JP 2008550830A JP 2008550830 A JP2008550830 A JP 2008550830A JP 2009524231 A5 JP2009524231 A5 JP 2009524231A5
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JP
Japan
Prior art keywords
layer
applying
dielectric
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008550830A
Other languages
English (en)
Japanese (ja)
Other versions
JP5276992B2 (ja
JP2009524231A (ja
Filing date
Publication date
Priority claimed from GBGB0601008.6A external-priority patent/GB0601008D0/en
Application filed filed Critical
Publication of JP2009524231A publication Critical patent/JP2009524231A/ja
Publication of JP2009524231A5 publication Critical patent/JP2009524231A5/ja
Application granted granted Critical
Publication of JP5276992B2 publication Critical patent/JP5276992B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008550830A 2006-01-18 2007-01-12 半導体デバイスの製造方法 Expired - Fee Related JP5276992B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0601008.6A GB0601008D0 (en) 2006-01-18 2006-01-18 Method of fabricating a semicondutor device
GB0601008.6 2006-01-18
PCT/GB2007/000080 WO2007083087A1 (en) 2006-01-18 2007-01-12 Method of fabricating a semiconductor device

Publications (3)

Publication Number Publication Date
JP2009524231A JP2009524231A (ja) 2009-06-25
JP2009524231A5 true JP2009524231A5 (enExample) 2010-03-04
JP5276992B2 JP5276992B2 (ja) 2013-08-28

Family

ID=36010525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008550830A Expired - Fee Related JP5276992B2 (ja) 2006-01-18 2007-01-12 半導体デバイスの製造方法

Country Status (7)

Country Link
US (1) US20100320463A1 (enExample)
EP (1) EP1974400B1 (enExample)
JP (1) JP5276992B2 (enExample)
KR (1) KR20080100195A (enExample)
GB (1) GB0601008D0 (enExample)
TW (1) TW200733207A (enExample)
WO (1) WO2007083087A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8608972B2 (en) 2006-12-05 2013-12-17 Nano Terra Inc. Method for patterning a surface
JP2009111000A (ja) * 2007-10-26 2009-05-21 Konica Minolta Holdings Inc 有機半導体素子の製造方法、及び有機半導体素子
US9899339B2 (en) * 2012-11-05 2018-02-20 Texas Instruments Incorporated Discrete device mounted on substrate
JP5656966B2 (ja) * 2012-12-05 2015-01-21 独立行政法人科学技術振興機構 電界効果トランジスタ及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001033649A1 (en) * 1999-11-02 2001-05-10 Koninklijke Philips Electronics N.V. Method of producing vertical interconnects between thin film microelectronic devices and products comprising such vertical interconnects
CA2404013A1 (en) * 2000-04-21 2001-11-01 Hongyou Fan Prototyping of patterned functional nanostructures
US6586791B1 (en) * 2000-07-19 2003-07-01 3M Innovative Properties Company Transistor insulator layer incorporating superfine ceramic particles
DE10126860C2 (de) * 2001-06-01 2003-05-28 Siemens Ag Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen
US6767828B2 (en) * 2001-10-05 2004-07-27 International Business Machines Corporation Method for forming patterns for semiconductor devices
US6617609B2 (en) * 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6949762B2 (en) * 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
JP4407311B2 (ja) * 2004-02-20 2010-02-03 セイコーエプソン株式会社 薄膜トランジスタの製造方法
US20050279995A1 (en) * 2004-06-21 2005-12-22 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film and organic insulating film prepared from the same
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법

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