GB0601008D0 - Method of fabricating a semicondutor device - Google Patents

Method of fabricating a semicondutor device

Info

Publication number
GB0601008D0
GB0601008D0 GBGB0601008.6A GB0601008A GB0601008D0 GB 0601008 D0 GB0601008 D0 GB 0601008D0 GB 0601008 A GB0601008 A GB 0601008A GB 0601008 D0 GB0601008 D0 GB 0601008D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
semicondutor device
semicondutor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0601008.6A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Priority to GBGB0601008.6A priority Critical patent/GB0601008D0/en
Publication of GB0601008D0 publication Critical patent/GB0601008D0/en
Priority to TW096100920A priority patent/TW200733207A/zh
Priority to KR1020087020173A priority patent/KR20080100195A/ko
Priority to EP07700370A priority patent/EP1974400B1/en
Priority to PCT/GB2007/000080 priority patent/WO2007083087A1/en
Priority to US12/161,191 priority patent/US20100320463A1/en
Priority to JP2008550830A priority patent/JP5276992B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
GBGB0601008.6A 2006-01-18 2006-01-18 Method of fabricating a semicondutor device Ceased GB0601008D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB0601008.6A GB0601008D0 (en) 2006-01-18 2006-01-18 Method of fabricating a semicondutor device
TW096100920A TW200733207A (en) 2006-01-18 2007-01-10 Method of fabricating a semiconductor device
KR1020087020173A KR20080100195A (ko) 2006-01-18 2007-01-12 반도체 디바이스 제조 방법
EP07700370A EP1974400B1 (en) 2006-01-18 2007-01-12 Method of fabricating a semiconductor device
PCT/GB2007/000080 WO2007083087A1 (en) 2006-01-18 2007-01-12 Method of fabricating a semiconductor device
US12/161,191 US20100320463A1 (en) 2006-01-18 2007-01-12 Method of Fabricating a Semiconductor Device
JP2008550830A JP5276992B2 (ja) 2006-01-18 2007-01-12 半導体デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0601008.6A GB0601008D0 (en) 2006-01-18 2006-01-18 Method of fabricating a semicondutor device

Publications (1)

Publication Number Publication Date
GB0601008D0 true GB0601008D0 (en) 2006-03-01

Family

ID=36010525

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0601008.6A Ceased GB0601008D0 (en) 2006-01-18 2006-01-18 Method of fabricating a semicondutor device

Country Status (7)

Country Link
US (1) US20100320463A1 (enExample)
EP (1) EP1974400B1 (enExample)
JP (1) JP5276992B2 (enExample)
KR (1) KR20080100195A (enExample)
GB (1) GB0601008D0 (enExample)
TW (1) TW200733207A (enExample)
WO (1) WO2007083087A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8608972B2 (en) 2006-12-05 2013-12-17 Nano Terra Inc. Method for patterning a surface
JP2009111000A (ja) * 2007-10-26 2009-05-21 Konica Minolta Holdings Inc 有機半導体素子の製造方法、及び有機半導体素子
US9899339B2 (en) * 2012-11-05 2018-02-20 Texas Instruments Incorporated Discrete device mounted on substrate
JP5656966B2 (ja) * 2012-12-05 2015-01-21 独立行政法人科学技術振興機構 電界効果トランジスタ及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001033649A1 (en) * 1999-11-02 2001-05-10 Koninklijke Philips Electronics N.V. Method of producing vertical interconnects between thin film microelectronic devices and products comprising such vertical interconnects
CA2404013A1 (en) * 2000-04-21 2001-11-01 Hongyou Fan Prototyping of patterned functional nanostructures
US6586791B1 (en) * 2000-07-19 2003-07-01 3M Innovative Properties Company Transistor insulator layer incorporating superfine ceramic particles
DE10126860C2 (de) * 2001-06-01 2003-05-28 Siemens Ag Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen
US6767828B2 (en) * 2001-10-05 2004-07-27 International Business Machines Corporation Method for forming patterns for semiconductor devices
US6617609B2 (en) * 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6949762B2 (en) * 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
JP4407311B2 (ja) * 2004-02-20 2010-02-03 セイコーエプソン株式会社 薄膜トランジスタの製造方法
US20050279995A1 (en) * 2004-06-21 2005-12-22 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film and organic insulating film prepared from the same
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법

Also Published As

Publication number Publication date
EP1974400B1 (en) 2013-03-13
TW200733207A (en) 2007-09-01
WO2007083087A1 (en) 2007-07-26
JP5276992B2 (ja) 2013-08-28
JP2009524231A (ja) 2009-06-25
KR20080100195A (ko) 2008-11-14
US20100320463A1 (en) 2010-12-23
EP1974400A1 (en) 2008-10-01

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)