JP2021506141A5 - - Google Patents
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- JP2021506141A5 JP2021506141A5 JP2020548890A JP2020548890A JP2021506141A5 JP 2021506141 A5 JP2021506141 A5 JP 2021506141A5 JP 2020548890 A JP2020548890 A JP 2020548890A JP 2020548890 A JP2020548890 A JP 2020548890A JP 2021506141 A5 JP2021506141 A5 JP 2021506141A5
- Authority
- JP
- Japan
- Prior art keywords
- fin structure
- laminated
- channel material
- laminated fin
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims 40
- 238000000034 method Methods 0.000 claims 20
- 238000000151 deposition Methods 0.000 claims 6
- 230000000873 masking effect Effects 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 4
- 238000000926 separation method Methods 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762594352P | 2017-12-04 | 2017-12-04 | |
| US62/594,352 | 2017-12-04 | ||
| PCT/US2018/063623 WO2019112954A1 (en) | 2017-12-04 | 2018-12-03 | Method for controlling transistor delay of nanowire or nanosheet transistor devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021506141A JP2021506141A (ja) | 2021-02-18 |
| JP2021506141A5 true JP2021506141A5 (enExample) | 2021-04-01 |
| JP7089656B2 JP7089656B2 (ja) | 2022-06-23 |
Family
ID=66659359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020548890A Active JP7089656B2 (ja) | 2017-12-04 | 2018-12-03 | ナノワイヤ又はナノシートトランジスタデバイスのトランジスタ遅延を制御する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10714391B2 (enExample) |
| JP (1) | JP7089656B2 (enExample) |
| KR (2) | KR102550501B1 (enExample) |
| CN (1) | CN111566803B (enExample) |
| TW (1) | TWI775995B (enExample) |
| WO (1) | WO2019112954A1 (enExample) |
Families Citing this family (46)
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| US11404325B2 (en) * | 2013-08-20 | 2022-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon and silicon germanium nanowire formation |
| KR102434993B1 (ko) * | 2015-12-09 | 2022-08-24 | 삼성전자주식회사 | 반도체 소자 |
| US12408431B2 (en) * | 2018-04-06 | 2025-09-02 | International Business Machines Corporation | Gate stack quality for gate-all-around field-effect transistors |
| US10825933B2 (en) * | 2018-06-11 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate-all-around structure and manufacturing method for the same |
| US20200295127A1 (en) * | 2019-03-13 | 2020-09-17 | Intel Corporation | Stacked transistors with different crystal orientations in different device strata |
| US11037905B2 (en) * | 2019-04-26 | 2021-06-15 | International Business Machines Corporation | Formation of stacked vertical transport field effect transistors |
| US11069679B2 (en) * | 2019-04-26 | 2021-07-20 | International Business Machines Corporation | Reducing gate resistance in stacked vertical transport field effect transistors |
| KR20250141848A (ko) * | 2019-05-13 | 2025-09-29 | 더 보드 오브 리젠츠 오브 더 유니버시티 오브 텍사스 시스템 | 3차원 sram 아키텍처 및 광학 도파관의 제작을 위한 촉매 영향의 화학적 에칭 |
| US11710667B2 (en) * | 2019-08-27 | 2023-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the same |
| US11557655B2 (en) * | 2019-10-11 | 2023-01-17 | Tokyo Electron Limited | Device and method of forming with three-dimensional memory and three-dimensional logic |
| CN112951912B (zh) * | 2019-12-10 | 2024-05-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US11302692B2 (en) * | 2020-01-16 | 2022-04-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same |
| US20210296306A1 (en) | 2020-03-18 | 2021-09-23 | Mavagail Technology, LLC | Esd protection for integrated circuit devices |
| US11837280B1 (en) * | 2020-05-20 | 2023-12-05 | Synopsys, Inc. | CFET architecture for balancing logic library and SRAM bitcell |
| WO2022067580A1 (zh) * | 2020-09-29 | 2022-04-07 | 华为技术有限公司 | 晶体管及其制作方法、集成电路、电子设备 |
| WO2022104489A1 (es) | 2020-11-20 | 2022-05-27 | Drovid Technologies | Método para transmitir y rastrear parámetros detectados por drones mediante (paas) con (ia). |
| WO2022109762A1 (zh) * | 2020-11-24 | 2022-06-02 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及半导体结构的形成方法 |
| US11527535B2 (en) | 2021-01-21 | 2022-12-13 | International Business Machines Corporation | Variable sheet forkFET device |
| US11424120B2 (en) | 2021-01-22 | 2022-08-23 | Tokyo Electron Limited | Plasma etching techniques |
| CN115050646B (zh) * | 2021-03-08 | 2025-05-27 | 北方集成电路技术创新中心(北京)有限公司 | 半导体结构及其形成方法 |
| CN113130489A (zh) * | 2021-03-12 | 2021-07-16 | 中国科学院微电子研究所 | 一种半导体器件的制造方法 |
| US12170322B2 (en) * | 2021-05-14 | 2024-12-17 | Samsung Electronics Co., Ltd. | Devices including stacked nanosheet transistors |
| EP4089722A1 (en) * | 2021-05-14 | 2022-11-16 | Samsung Electronics Co., Ltd. | Devices including stacked nanosheet transistors |
| US11843001B2 (en) | 2021-05-14 | 2023-12-12 | Samsung Electronics Co., Ltd. | Devices including stacked nanosheet transistors |
| TWI898138B (zh) * | 2021-05-14 | 2025-09-21 | 南韓商三星電子股份有限公司 | 奈米薄片電晶體裝置及其形成方法 |
| KR102864496B1 (ko) | 2021-06-24 | 2025-09-24 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US12087770B2 (en) | 2021-08-05 | 2024-09-10 | International Business Machines Corporation | Complementary field effect transistor devices |
| KR102877120B1 (ko) * | 2021-08-13 | 2025-10-27 | 삼성전자주식회사 | 반도체 소자 |
| US12166037B2 (en) * | 2021-08-27 | 2024-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation layers in stacked semiconductor devices |
| US12113067B2 (en) | 2021-09-13 | 2024-10-08 | International Business Machines Corporation | Forming N-type and P-type horizontal gate-all-around devices |
| US11837604B2 (en) | 2021-09-22 | 2023-12-05 | International Business Machine Corporation | Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices |
| US12191208B2 (en) * | 2021-09-23 | 2025-01-07 | International Business Machines Corporation | Dual strained semiconductor substrate and patterning |
| US12563797B2 (en) * | 2021-10-15 | 2026-02-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
| US12255099B2 (en) | 2021-10-28 | 2025-03-18 | Samsung Electronics Co., Ltd. | Methods of forming fin-on-nanosheet transistor stacks |
| KR20230063899A (ko) | 2021-10-28 | 2023-05-10 | 삼성전자주식회사 | 3차원 반도체 소자 및 그의 제조 방법 |
| US12310062B2 (en) | 2021-11-11 | 2025-05-20 | Samsung Electronics Co., Ltd. | Integrated circuit devices including stacked transistors and methods of forming the same |
| US12439641B2 (en) * | 2021-11-19 | 2025-10-07 | Tokyo Electron Limited | Compact 3D design and connections with optimum 3D transistor stacking |
| US12324207B2 (en) | 2021-12-03 | 2025-06-03 | International Business Machines Corporation | Channel protection of gate-all-around devices for performance optimization |
| US20230178435A1 (en) * | 2021-12-07 | 2023-06-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Complementary fet (cfet) devices and methods |
| US20230207468A1 (en) * | 2021-12-28 | 2023-06-29 | International Business Machines Corporation | Stacked staircase cmos with buried power rail |
| US20230261090A1 (en) * | 2022-02-14 | 2023-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
| KR102893178B1 (ko) | 2022-05-17 | 2025-11-28 | 삼성전자주식회사 | 반도체 장치 |
| JP2025517426A (ja) * | 2022-05-20 | 2025-06-05 | 東京エレクトロン株式会社 | アクティブデバイスの形成前にウェーハ接合を介してバックサイド電源供給ネットワークを組み込んだシーケンシャル相補型ｆｅｔ |
| KR102809779B1 (ko) * | 2022-09-14 | 2025-05-16 | 연세대학교 산학협력단 | 재구성 가능한 양극성 트랜지스터 |
| CN120051855A (zh) * | 2022-10-17 | 2025-05-27 | 应用材料公司 | 水平环绕式栅极器件改善的通道均匀性 |
| US20240429102A1 (en) * | 2023-06-21 | 2024-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI283066B (en) * | 2004-09-07 | 2007-06-21 | Samsung Electronics Co Ltd | Field effect transistor (FET) having wire channels and method of fabricating the same |
| JP2011029503A (ja) | 2009-07-28 | 2011-02-10 | Toshiba Corp | 半導体装置 |
| US8551833B2 (en) * | 2011-06-15 | 2013-10-08 | International Businesss Machines Corporation | Double gate planar field effect transistors |
| US9224810B2 (en) * | 2011-12-23 | 2015-12-29 | Intel Corporation | CMOS nanowire structure |
| US9012284B2 (en) | 2011-12-23 | 2015-04-21 | Intel Corporation | Nanowire transistor devices and forming techniques |
| KR101958530B1 (ko) * | 2012-07-27 | 2019-03-14 | 인텔 코포레이션 | 나노와이어 트랜지스터 디바이스 및 형성 기법 |
| KR102002380B1 (ko) * | 2012-10-10 | 2019-07-23 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| KR102136234B1 (ko) * | 2013-10-03 | 2020-07-21 | 인텔 코포레이션 | 나노와이어 트랜지스터들을 위한 내부 스페이서들 및 그 제조 방법 |
| WO2015147792A1 (en) * | 2014-03-24 | 2015-10-01 | Intel Corporation | Integration methods to fabricate internal spacers for nanowire devices |
| US9818872B2 (en) * | 2015-06-30 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate device and method of fabrication thereof |
| EP3127862B1 (en) | 2015-08-06 | 2018-04-18 | IMEC vzw | A method of manufacturing a gate-all-around nanowire device comprising two different nanowires |
| WO2017044107A1 (en) * | 2015-09-10 | 2017-03-16 | Intel Corporation | Semiconductor nanowire device having cavity spacer and method of fabricating cavity spacer for semiconductor nanowire device |
| CN106531632B (zh) * | 2015-09-10 | 2020-01-03 | 中国科学院微电子研究所 | 堆叠纳米线mos晶体管制作方法 |
| US9583399B1 (en) * | 2015-11-30 | 2017-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9627540B1 (en) * | 2015-11-30 | 2017-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US20170170268A1 (en) * | 2015-12-15 | 2017-06-15 | Qualcomm Incorporated | NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETs) EMPLOYING A NANOWIRE CHANNEL STRUCTURE HAVING ROUNDED NANOWIRE STRUCTURES |
| KR102416133B1 (ko) | 2016-01-11 | 2022-07-01 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| CN106960870B (zh) | 2016-01-11 | 2021-09-10 | 三星电子株式会社 | 半导体装置及其制造方法 |
| KR102360333B1 (ko) | 2016-02-18 | 2022-02-08 | 삼성전자주식회사 | 반도체 장치 |
| TWI625785B (zh) | 2016-03-02 | 2018-06-01 | Tokyo Electron Limited | 具有可調節選擇性之等向性矽與矽化鍺蝕刻 |
| WO2017171845A1 (en) * | 2016-04-01 | 2017-10-05 | Intel Corporation | Beaded fin transistor |
| US9660028B1 (en) * | 2016-10-31 | 2017-05-23 | International Business Machines Corporation | Stacked transistors with different channel widths |
-
2018
- 2018-11-29 US US16/204,605 patent/US10714391B2/en active Active
- 2018-12-03 KR KR1020227033658A patent/KR102550501B1/ko active Active
- 2018-12-03 JP JP2020548890A patent/JP7089656B2/ja active Active
- 2018-12-03 KR KR1020207019360A patent/KR102449793B1/ko active Active
- 2018-12-03 CN CN201880085673.8A patent/CN111566803B/zh active Active
- 2018-12-03 WO PCT/US2018/063623 patent/WO2019112954A1/en not_active Ceased
- 2018-12-04 TW TW107143538A patent/TWI775995B/zh active
-
2020
- 2020-06-10 US US16/898,014 patent/US10991626B2/en active Active
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