JP2000174343A5 - - Google Patents
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- Publication number
- JP2000174343A5 JP2000174343A5 JP1999184602A JP18460299A JP2000174343A5 JP 2000174343 A5 JP2000174343 A5 JP 2000174343A5 JP 1999184602 A JP1999184602 A JP 1999184602A JP 18460299 A JP18460299 A JP 18460299A JP 2000174343 A5 JP2000174343 A5 JP 2000174343A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- mask pattern
- substrate
- producing
- nth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 description 33
- 150000004767 nitrides Chemical class 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000009422 growth inhibiting effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18460299A JP4255168B2 (ja) | 1998-06-30 | 1999-06-30 | 窒化物半導体の製造方法及び発光素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-183468 | 1998-06-30 | ||
| JP18346898 | 1998-06-30 | ||
| JP18460299A JP4255168B2 (ja) | 1998-06-30 | 1999-06-30 | 窒化物半導体の製造方法及び発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000174343A JP2000174343A (ja) | 2000-06-23 |
| JP2000174343A5 true JP2000174343A5 (enExample) | 2006-01-26 |
| JP4255168B2 JP4255168B2 (ja) | 2009-04-15 |
Family
ID=26501891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18460299A Expired - Fee Related JP4255168B2 (ja) | 1998-06-30 | 1999-06-30 | 窒化物半導体の製造方法及び発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4255168B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335546B1 (en) * | 1998-07-31 | 2002-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
| JP2003007999A (ja) * | 2001-06-26 | 2003-01-10 | Sony Corp | 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法 |
| CN101931039B (zh) * | 2010-08-23 | 2012-07-25 | 安徽三安光电有限公司 | 具有双层交错贯穿孔洞的氮化镓基发光二极管及其制作工艺 |
| CN102723406B (zh) * | 2011-03-29 | 2017-07-07 | 清华大学 | 半导体外延结构 |
| KR20140119714A (ko) * | 2012-01-31 | 2014-10-10 | 소이텍 | 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들 |
| KR101523084B1 (ko) * | 2013-10-31 | 2015-05-26 | 광주과학기술원 | 성장용 기판, 이를 이용한 발광 다이오드 및 질화갈륨 발광 다이오드의 제조방법 |
| CN106981415A (zh) * | 2017-04-19 | 2017-07-25 | 华南理工大学 | GaN高电子迁移率晶体管的氮化镓薄膜及其纳米外延过生长方法 |
-
1999
- 1999-06-30 JP JP18460299A patent/JP4255168B2/ja not_active Expired - Fee Related
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