JP4255168B2 - 窒化物半導体の製造方法及び発光素子 - Google Patents

窒化物半導体の製造方法及び発光素子 Download PDF

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Publication number
JP4255168B2
JP4255168B2 JP18460299A JP18460299A JP4255168B2 JP 4255168 B2 JP4255168 B2 JP 4255168B2 JP 18460299 A JP18460299 A JP 18460299A JP 18460299 A JP18460299 A JP 18460299A JP 4255168 B2 JP4255168 B2 JP 4255168B2
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nitride semiconductor
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substrate
gan
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JP2000174343A (ja
JP2000174343A5 (enExample
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有三 津田
大介 花岡
盛規 矢野
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Sharp Corp
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Sharp Corp
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JP18460299A 1998-06-30 1999-06-30 窒化物半導体の製造方法及び発光素子 Expired - Fee Related JP4255168B2 (ja)

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JP18460299A JP4255168B2 (ja) 1998-06-30 1999-06-30 窒化物半導体の製造方法及び発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-183468 1998-06-30
JP18346898 1998-06-30
JP18460299A JP4255168B2 (ja) 1998-06-30 1999-06-30 窒化物半導体の製造方法及び発光素子

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JP2000174343A JP2000174343A (ja) 2000-06-23
JP2000174343A5 JP2000174343A5 (enExample) 2006-01-26
JP4255168B2 true JP4255168B2 (ja) 2009-04-15

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335546B1 (en) * 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
JP2003007999A (ja) * 2001-06-26 2003-01-10 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体基板およびその製造方法ならびに半導体発光素子の製造方法ならびに半導体装置の製造方法
CN101931039B (zh) * 2010-08-23 2012-07-25 安徽三安光电有限公司 具有双层交错贯穿孔洞的氮化镓基发光二极管及其制作工艺
CN102723406B (zh) * 2011-03-29 2017-07-07 清华大学 半导体外延结构
KR20140119714A (ko) * 2012-01-31 2014-10-10 소이텍 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들
KR101523084B1 (ko) * 2013-10-31 2015-05-26 광주과학기술원 성장용 기판, 이를 이용한 발광 다이오드 및 질화갈륨 발광 다이오드의 제조방법
CN106981415A (zh) * 2017-04-19 2017-07-25 华南理工大学 GaN高电子迁移率晶体管的氮化镓薄膜及其纳米外延过生长方法

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