JP3920447B2 - 絶縁体一化合物半導体界面構造および製造方法 - Google Patents

絶縁体一化合物半導体界面構造および製造方法 Download PDF

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Publication number
JP3920447B2
JP3920447B2 JP06780298A JP6780298A JP3920447B2 JP 3920447 B2 JP3920447 B2 JP 3920447B2 JP 06780298 A JP06780298 A JP 06780298A JP 6780298 A JP6780298 A JP 6780298A JP 3920447 B2 JP3920447 B2 JP 3920447B2
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Japan
Prior art keywords
compound semiconductor
band gap
insulator
spacer layer
interface
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Expired - Lifetime
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JP06780298A
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English (en)
Japanese (ja)
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JPH10275806A (ja
JPH10275806A5 (enExample
Inventor
マシュアス・パスラック
ジュン・ワン
ジョナサン・ケイ・アブロクワ
ジヒイ・ジミー・ユ
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NXP USA Inc
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NXP USA Inc
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Publication of JPH10275806A publication Critical patent/JPH10275806A/ja
Publication of JPH10275806A5 publication Critical patent/JPH10275806A5/ja
Application granted granted Critical
Publication of JP3920447B2 publication Critical patent/JP3920447B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
JP06780298A 1997-03-04 1998-03-02 絶縁体一化合物半導体界面構造および製造方法 Expired - Lifetime JP3920447B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/812,952 US6359294B1 (en) 1997-03-04 1997-03-04 Insulator-compound semiconductor interface structure
US812952 1997-03-04

Publications (3)

Publication Number Publication Date
JPH10275806A JPH10275806A (ja) 1998-10-13
JPH10275806A5 JPH10275806A5 (enExample) 2005-03-17
JP3920447B2 true JP3920447B2 (ja) 2007-05-30

Family

ID=25211069

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06780298A Expired - Lifetime JP3920447B2 (ja) 1997-03-04 1998-03-02 絶縁体一化合物半導体界面構造および製造方法

Country Status (4)

Country Link
US (1) US6359294B1 (enExample)
EP (1) EP0863539B1 (enExample)
JP (1) JP3920447B2 (enExample)
DE (1) DE69827058T2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130092548A (ko) 2010-08-31 2013-08-20 스미또모 가가꾸 가부시키가이샤 반도체 기판, 절연 게이트형 전계 효과 트랜지스터 및 반도체 기판의 제조 방법
CN103098188B (zh) 2010-08-31 2016-03-30 住友化学株式会社 半导体基板及绝缘栅极型场效电子晶体管
CN106560928B (zh) * 2015-09-28 2019-11-08 河北大学 一种电荷俘获型存储元件及其制备工艺

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5124762A (en) * 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
US5334865A (en) * 1991-07-31 1994-08-02 Allied-Signal Inc. MODFET structure for threshold control
US5597768A (en) * 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5747838A (en) * 1996-11-27 1998-05-05 The Regents Of The University Of California Ultra-low phase noise GaAs MOSFETs

Also Published As

Publication number Publication date
DE69827058D1 (de) 2004-11-25
US6359294B1 (en) 2002-03-19
DE69827058T2 (de) 2005-03-03
JPH10275806A (ja) 1998-10-13
EP0863539A1 (en) 1998-09-09
EP0863539B1 (en) 2004-10-20

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